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Infineon Technologies BAS70-04B5000

Part No.:
BAS70-04B5000
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS70-04B5000.pdf
Description:
DIODE ARR SCHOT 70V 70MA SOT2333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:99,000

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Product details

Overview

BAS70-04B5000 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a common-cathode dual diode, rated for 70 V reverse voltage, 70 mA continuous forward current, and 250 mW total power dissipation at TS ≤ 101 °C, used for high-speed switching and voltage clamping in signal path protection circuits.

For engineers reviewing the BAS70-04B5000 datasheet, BAS70-04B5000 pinout, BAS70-04B5000 application, or BAS70-04B5000 equivalent, key selection criteria include low forward voltage (max 880 mV @ 10 mA), tight VF matching (≤20 mV), sub-2 pF capacitance at 0 V, 100 ps reverse recovery time, and thermal resistance of ≤195 K/W junction-to-soldering-point.

Technical Context

The BAS70-04B5000 integrates two Schottky diodes sharing a common cathode terminal, enabling bidirectional clamping or dual-path signal routing in compact space-constrained designs. Its low series inductance (1.8 nH) and ultra-low thermal resistance support stable operation up to 125 °C ambient with derated forward current.

Designed for non-automotive industrial and consumer applications, it delivers fast switching via carrier lifetime <100 ps and maintains low leakage (<0.1 µA @ 50 V) across -55 °C to 125 °C operating range, with no automotive qualification completed per manufacturer documentation.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)70 V - supports clamping of transient spikes up to 70 V without breakdown
Forward Current (IF)70 mA - maximum continuous DC current per diode under thermal limits (TS ≤ 101 °C)
Forward Voltage (VF)705 mV max @ 10 mA - enables low-loss signal rectification and level shifting
Diode Capacitance (CT)1.5–2.0 pF @ 0 V, 1 MHz - minimizes signal distortion in RF/mixing applications
Reverse Recovery Time (τrr)≤100 ps - ensures clean edge transitions in >100 MHz switching circuits
Thermal Resistance (RthJS)≤195 K/W - allows efficient heat transfer from junction to solder point in PCB-mounted use
Voltage Matching (∆VF)≤20 mV @ 10 mA - guarantees matched conduction behavior between dual diodes for balanced signal paths

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads; 3-terminal configuration where Pin 1 and Pin 2 are anodes, Pin 3 is shared cathode.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Anode of Diode 1Input node for first Schottky path; connects to signal source or clamp rail
Pin 2Anode of Diode 2Independent input node for second Schottky path; enables dual-direction clamping
Pin 3Common CathodeShared output/return node; simplifies PCB layout by eliminating separate cathode traces

Key Features

FeatureDesign Value
Common-cathode dual-diode topologyReduces component count and board area vs. discrete diode pairs in clamping or mixing circuits
Ultra-low forward voltage spread≤20 mV VF mismatch ensures symmetrical turn-on in differential or balanced configurations
Sub-2 pF junction capacitancePreserves signal integrity in 100+ MHz RF detector and mixer front-ends
100 ps reverse recovery timeSupports clean switching in high-frequency sample-and-hold or peak-detect circuits
Low thermal resistance (≤195 K/W)Enables sustained 70 mA operation on standard FR4 without heatsinking at ≤101 °C case temperature

Applications

RF Signal DetectorESD Protection Clamp

Use Scenario: Detecting amplitude-modulated RF signals in low-power receiver front-ends.

IC Role / Device Role / Timing Role: Schottky diode acting as envelope detector with minimal forward drop and capacitance.

Use Value: 705 mV VF max @ 10 mA and 1.5 pF CT enable accurate demodulation of weak 433 MHz ISM band signals.

Use Scenario: Protecting I/O pins of microcontrollers and sensors against ±8 kV contact ESD events.

IC Role / Device Role / Timing Role: Fast-turn-on clamping diode shunting transients to ground or supply rails.

Use Value: 100 ps τrr and <0.1 µA IR ensure rapid response without false triggering during normal operation.

Dual-Path Level ShifterHigh-Speed Logic Clamp

Use Scenario: Translating logic levels between 3.3 V and 5 V domains in mixed-voltage digital systems.

IC Role / Device Role / Timing Role: Dual-anode, common-cathode configuration providing independent clamping for two signal lines.

Use Value: Matched ∆VF ≤20 mV ensures consistent threshold alignment across both translation paths.

Use Scenario: Preventing overshoot/undershoot on clock or data lines in FPGA or MCU interfaces.

IC Role / Device Role / Timing Role: Low-capacitance Schottky clamp limiting voltage excursions beyond safe logic thresholds.

Use Value: 2 pF CT and 70 mA IF rating allow clamping of fast 10 ns rise-time edges without loading effects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GSingle diode, 30 V VR, 200 mA IF, 0.45 pF CTLacks dual-diode integration; lower voltage rating but higher current and lower capacitancePreferred when only one clamping path is needed and VR < 30 V suffices
BAT54CCommon-cathode dual Schottky, 30 V VR, 200 mA IF, 10 pF CTHigher capacitance and lower VR limit; same SOT23 footprint but different VF profileAcceptable where 30 V clamping is adequate and board layout tolerates higher CT

Compared with NSR0230HT1G and BAT54C, the BAS70-04B5000 uniquely balances 70 V capability, dual-diode integration, and sub-2 pF capacitance-making it optimal for RF-sensitive, medium-voltage clamping where space and matching matter.

Availability

BAS70-04B5000 is available at Aetrix Electronics and suitable for RF signal detection, ESD protection clamping, dual-path level shifting, and high-speed logic clamping requiring stable component supply across industrial and consumer production cycles.

Supply support for BAS70-04B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions, with global manufacturing and quality certification to industrial standards.

The BAS70 series belongs to Infineon's general-purpose Schottky diode product line, designed specifically for high-speed switching, voltage clamping, and signal mixing in cost-sensitive, space-constrained industrial and consumer electronics.

FAQ

What is the pin configuration of BAS70-04B5000?

It uses a 3-pin SOT23 package with Pin 1 and Pin 2 as independent anodes, and Pin 3 as the common cathode. This configuration is confirmed in Infineon's 2006 datasheet and matches the physical marking layout showing "74s" on the device body.

Is BAS70-04B5000 qualified for automotive use?

No. The datasheet explicitly states "Not for automotive applications" and notes that automotive qualification was "ongoing" as of August 2006, with no completion or release documented. It is rated for industrial and consumer use only.

How does BAS70-04B5000 compare to BAS70-05 in thermal performance?

BAS70-04B5000 has RthJS ≤195 K/W and maximum case temperature TS ≤101 °C, while BAS70-05 is rated for TS ≤95 °C with RthJS ≤220 K/W. The -04 variant supports higher power dissipation under identical mounting conditions due to lower thermal resistance.

Can BAS70-04B5000 replace BAT54C in existing designs?

Only with circuit validation. Though both are common-cathode dual Schottkys in SOT23, BAS70-04B5000 offers 70 V VR vs. BAT54C's 30 V, but higher VF (705 mV vs. ~320 mV typical) and tighter ∆VF (≤20 mV vs. ~50 mV). Layout is compatible, but voltage margin and conduction loss must be rechecked.

BAS70-04B5000 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Series Connection
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io) (per Diode):
70mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Operating Temperature - Junction:
150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23-3-3

BAS70-04B5000 FAQ

1.How can I place an order for BAS70-04B5000 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70-04B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70-04B5000 reliable?

The price and inventory of BAS70-04B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-04B5000 is usually 5 days.

3.What payment methods are accepted for BAS70-04B5000?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-04B5000 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70-04B5000?

BAS70-04B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70-04B5000 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70-04B5000?

For technical support, including BAS70-04B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-04B5000 requirements.

6.How does Aetrix verify that BAS70-04B5000 is sourced from the original manufacturer or authorized distributors?

All BAS70-04B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-04B5000 meets industry standards.

7.What is the process for return or replacement of BAS70-04B5000?

All BAS70-04B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-04B5000, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70-04B5000 part is unused and in its original packaging.

Return procedure for BAS70-04B5000:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS70-04B5000 Tags

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