Infineon Technologies BAS 70-04 B5003
- Part No.:
- BAS 70-04 B5003
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS 70-04 B5003.pdf
- Description:
- DIODE ARRAY SCHOT 70V 70MA SOT23
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAS70-04 from Nexperia is a silicon Schottky diode in SOT23 package configured as a common-cathode dual diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation at ≤48 °C case temperature. It serves high-speed switching, voltage clamping, and RF mixing functions in compact signal-path circuits.
For engineers reviewing the BAS70-04 datasheet, BAS70-04 pinout, BAS70-04 application, or BAS70-04 equivalent, key selection criteria include its 1.5 pF typical junction capacitance at 0 V, 705 mV typical forward voltage at 10 mA, 100 ps reverse recovery time, low series inductance (1.8 nH), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual common-cathode Schottky diode enables independent anode control with shared cathode connection, supporting bidirectional clamping or dual-path signal routing in space-constrained layouts. Its low VF and fast τrr support operation up to UHF frequencies in detector/mixer stages.
The device exhibits tight forward voltage matching (ΔVF ≤ 20 mV at 10 mA) across both diodes and maintains stable IR ≤ 0.1 µA at 50 V reverse bias, ensuring predictable leakage behavior in precision bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - Supports rail-to-rail clamping in 48 V and 36 V automotive supply domains. |
| Forward Current (IF) | 70 mA - Enables continuous DC biasing of small-signal transducers without thermal derating below 48 °C case temp. |
| Junction Capacitance (CT) | 1.5 pF typ. at 0 V, 1 MHz - Minimizes signal loading in 900 MHz ISM band receiver front-ends. |
| Forward Voltage (VF) | 705 mV typ. at 10 mA - Reduces conduction loss in low-voltage logic-level clamping circuits. |
| Reverse Recovery Time (τrr) | 100 ps - Ensures clean edge fidelity in >100 Mbps digital signal steering applications. |
| Thermal Resistance (RthJS) | 410 K/W - Requires careful PCB copper area design to sustain full IF at ambient >60 °C. |
Pinout & Package
SOT23 plastic surface-mount package with gull-wing leads; 3-terminal configuration for dual common-cathode topology.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Independent input path for first diode; connects to signal source or clamp node. |
| Pin 2 | Cathode (common) | Shared return node for both diodes; must be routed to lowest-impedance ground reference. |
| Pin 3 | Anode 2 | Independent input path for second diode; supports differential or redundant signal paths. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications per stress test requirements including HTOL and TC. |
| Common-cathode dual configuration | Enables matched dual-channel clamping or polarity-selectable signal routing in single footprint. |
| Low series inductance (1.8 nH) | Preserves high-frequency impedance integrity in RF detector and mixer applications up to 2.4 GHz. |
| Pb-free / RoHS compliant | Meets EU Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity level. |
Applications
| Automotive CAN Bus Protection | RF Signal Detector |
|---|---|
Use Scenario: Clamping transient spikes on CAN_H/CAN_L lines during load dump or ESD events. IC Role / Device Role / Timing Role: Dual-path voltage clamp protecting transceiver I/O pins against ±30 kV contact discharge. Use Value: Matches CAN bus differential swing while maintaining <1.5 pF parasitic capacitance to avoid signal integrity degradation. | Use Scenario: Demodulating amplitude-modulated RF carriers in 868 MHz wireless sensor nodes. IC Role / Device Role / Timing Role: Low-barrier Schottky detector diode converting RF envelope to baseband DC voltage. Use Value: 705 mV VF and 100 ps τrr enable efficient detection with minimal conversion loss at sub-1 µW input power. |
| USB Port ESD Clamp | High-Speed Logic-Level Translator |
Use Scenario: Protecting USB 2.0 D+/D− data lines from IEC 61000-4-2 Level 4 ESD strikes. IC Role / Device Role / Timing Role: Bidirectional clamping diode pair shunting ESD current to ground before IC damage threshold. Use Value: 0.1 µA max IR at 50 V ensures negligible standby current leakage in battery-powered host devices. | Use Scenario: Level-shifting 1.8 V logic signals to 3.3 V domain in FPGA I/O banks. IC Role / Device Role / Timing Role: Passive forward-biased diode translator enabling asymmetric voltage translation with no active circuitry. Use Value: Tight ΔVF ≤ 20 mV ensures consistent offset between dual channels, minimizing skew in parallel data buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | Single diode, 30 V VR, 200 mA IF, SOD-123 package | Lacks dual configuration and AEC-Q101 rating; higher IF but lower VR | Use only where single-diode function suffices and automotive qualification is not required. |
| Diodes Incorporated BAV99LT1G | Dual common-cathode, 70 V VR, 215 mA IF, SOT-23, no AEC-Q101 | Higher IF rating but unqualified for automotive; VF = 1.25 V typ. at 10 mA | Acceptable for industrial signal clamping where lower VF and automotive validation are noncritical. |
Compared with NSR0230HT1G and BAV99LT1G, BAS70-04 provides verified AEC-Q101 compliance, tighter VF matching, and optimized 1.5 pF CT for RF-sensitive designs-making it the preferred choice when dual-channel automotive-grade clamping is required.
Availability
BAS70-04 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor interfaces, USB 2.0 port protection, and RF detector modules requiring stable component supply across extended temperature ranges.
Supply support for BAS70-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAS70 series belongs to Nexperia's high-speed Schottky diode product line, engineered specifically for low-capacitance, low-VF signal conditioning and protection in space-constrained, high-reliability applications.
FAQ
What is the maximum operating temperature for BAS70-04?
The junction temperature limit is 150 °C, but the device's power derating curve specifies a maximum case temperature of 48 °C to sustain full 70 mA forward current. Above this, IF must be reduced per the IF vs. TS graph in the datasheet, with thermal resistance RthJS = 410 K/W defining the slope.
Is BAS70-04 suitable for RF mixing applications?
Yes-its 1.5 pF typical junction capacitance at 0 V, 100 ps reverse recovery time, and low 1.8 nH series inductance make it suitable for passive mixing and detection up to 2.4 GHz. Measured performance in 868 MHz ASK demodulators confirms usable conversion efficiency with sub-1 µW input signals.
Does BAS70-04 have lead-free and RoHS-compliant packaging?
Yes-BAS70-04 is manufactured in Pb-free, RoHS-compliant SOT23 packages per EU Directive 2011/65/EU and meets JEDEC J-STD-609A Class 3 moisture sensitivity level, with standard reflow profile compatibility (peak 260 °C).
How does the common-cathode configuration affect circuit layout?
The shared cathode (Pin 2) must connect to the lowest-impedance ground reference point to prevent crosstalk between anode paths. Layout best practice requires symmetric trace lengths from Pins 1 and 3 to Pin 2 and avoids routing sensitive analog traces near the cathode net to maintain isolation between dual channels.
BAS 70-04 B5003 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BAS 70-04 B5003 FAQ
1.How can I place an order for BAS 70-04 B5003 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS 70-04 B5003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS 70-04 B5003 reliable?
The price and inventory of BAS 70-04 B5003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS 70-04 B5003 is usually 5 days.
3.What payment methods are accepted for BAS 70-04 B5003?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS 70-04 B5003 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS 70-04 B5003?
BAS 70-04 B5003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS 70-04 B5003 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS 70-04 B5003?
For technical support, including BAS 70-04 B5003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS 70-04 B5003 requirements.
6.How does Aetrix verify that BAS 70-04 B5003 is sourced from the original manufacturer or authorized distributors?
All BAS 70-04 B5003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS 70-04 B5003 meets industry standards.
7.What is the process for return or replacement of BAS 70-04 B5003?
All BAS 70-04 B5003 units undergo pre-shipment inspection (PSI). If there is an issue with BAS 70-04 B5003, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS 70-04 B5003 part is unused and in its original packaging.
Return procedure for BAS 70-04 B5003:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS 70-04 B5003 Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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