Infineon Technologies BAS7004SH6327XTSA1
- Part No.:
- BAS7004SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BAS7004SH6327XTSA1.pdf
- Description:
- DIODE ARR SCHOTT 70V SOT363-PO
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAS7004SH6327XTSA1 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common-cathode dual diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation at TS ≤ 48 °C. It delivers low forward voltage (720 mV at 15 mA), fast switching (100 ps reverse recovery time), and low capacitance (1.5 pF typ at 0 V), enabling use in high-speed signal clamping and RF detector circuits.
For engineers reviewing the BAS7004SH6327XTSA1 datasheet, BAS7004SH6327XTSA1 pinout, BAS7004SH6327XTSA1 application, or BAS7004SH6327XTSA1 equivalent, key selection criteria include its dual common-cathode topology, thermal derating profile (TS ≤ 48 °C), VF matching ≤20 mV, and AEC-Q101 qualification for automotive signal conditioning.
Technical Context
This dual Schottky diode integrates two independent anodes sharing one cathode terminal, supporting parallel or independent signal path operation. Its low series inductance (1.4 nH) and minimal charge carrier lifetime (≤100 ps) enable stable performance up to UHF frequencies.
The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C and thermal resistance from junction to soldering point ≤410 K/W - critical for compact PCB layouts where localized heating must be managed under pulsed loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping of transient spikes up to automotive load-dump levels without breakdown |
| Forward Current (IF) | 70 mA DC - sufficient for low-power detector and logic-level translation applications |
| Forward Voltage (VF) | 720 mV at 15 mA - enables efficient signal rectification with minimal voltage drop in battery-powered receivers |
| Reverse Recovery Time (τrr) | 100 ps - ensures minimal switching distortion in 100+ MHz RF envelope detection |
| Diode Capacitance (CT) | 1.5 pF at 0 V - preserves high-frequency impedance integrity in mixer and sampling circuits |
| Thermal Resistance (RthJS) | ≤410 K/W - defines maximum allowable power dissipation before exceeding 150 °C junction limit at TS ≤ 48 °C |
| Operating Temperature | –55 °C to +125 °C - validated for under-hood automotive and industrial control environments |
Pinout & Package
Package: SOT323 - surface-mount plastic package with gull-wing leads, 1.3 mm × 2.1 mm footprint, suitable for automated reflow assembly and space-constrained RF modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Pin 1) | Input/Signal Anode | First Schottky junction anode; connects to input signal or clamp node |
| Cathode (Pin 2) | Common Cathode | Shared cathode node for both diodes; ties to reference or ground plane |
| Anode 2 (Pin 3) | Input/Signal Anode | Second independent anode; enables dual-path clamping or differential detection |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, and ESD HBM ≥2 kV |
| Low VF Matching | ΔVF ≤20 mV at 10 mA - ensures balanced conduction between dual anodes in precision detector applications |
| Pb-Free & RoHS Compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak |
| High-Speed Switching | τrr ≤100 ps - eliminates tail current in fast-edge digital clamping and pulse shaping |
Applications
| Automotive Signal Clamping | RF Envelope Detection |
|---|---|
Use Scenario: Protecting CAN transceiver inputs from ESD and inductive kickback in 12 V vehicle networks. IC Role / Device Role / Timing Role: Dual-anode Schottky clamp limiting voltage excursions to <70 V while preserving signal edge fidelity. Use Value: Prevents latch-up in downstream PHY ICs without adding RC delay; leverages matched VF for symmetrical positive/negative clamping. | Use Scenario: Demodulating AM signals in tire pressure monitoring system (TPMS) receiver front-ends. IC Role / Device Role / Timing Role: High-speed envelope detector converting RF carrier amplitude to baseband voltage. Use Value: 1.5 pF CT and 100 ps τrr maintain >1 GHz small-signal bandwidth; low VF enables sub-100 µA detection threshold. |
| Digital Logic Level Translation | High-Frequency Sampling Gate |
Use Scenario: Interfacing 3.3 V microcontroller GPIO with 5 V sensor outputs in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased Schottky diodes to clamp and translate logic thresholds. Use Value: 720 mV VF at 15 mA allows clean 3.3 V → 5 V translation with <1 ns propagation skew between dual paths. | Use Scenario: Gating analog sample pulses in high-speed data acquisition systems sampling at 100+ MSPS. IC Role / Device Role / Timing Role: Fast-switching sampling diode controlling analog signal injection into hold capacitor. Use Value: ≤100 ps τrr minimizes aperture jitter; matched VF ensures consistent gate timing across dual sampling channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR20F70NXT5G | Single-diode SOD-523 package; 70 V VR, 200 mA IF, 390 mV VF @ 10 mA | Lacks dual configuration; higher IF rating but no VF matching spec | Use only when single-diode function suffices and board area permits larger footprint |
| BAT54C,215 | SOT23 dual common-cathode; 30 V VR, 200 mA IF, 800 mV VF @ 10 mA, not AEC-Q101 qualified | Lower VR limits use in 12 V automotive transients; wider VF spread (±50 mV) | Select for cost-sensitive consumer-grade designs where AEC-Q101 is not required |
Compared with NSR20F70NXT5G and BAT54C,215, BAS7004SH6327XTSA1 uniquely combines AEC-Q101 qualification, dual common-cathode topology, tight VF matching (≤20 mV), and 70 V rating - making it the only choice for automotive-grade dual-path clamping where thermal derating to TS ≤ 48 °C is acceptable.
Availability
BAS7004SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive signal protection, RF envelope detection, and high-speed sampling applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS7004SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
BAS7004SH6327XTSA1 belongs to Infineon's BAS70 family of high-speed Schottky diodes designed specifically for automotive signal integrity and RF front-end applications demanding low capacitance, fast recovery, and AEC-Q101 reliability.
FAQ
Is BAS7004SH6327XTSA1 pin-compatible with BAS70-04S?
Yes - both share identical SOT323 package and common-cathode pinout (Anode1–Cathode–Anode2). BAS7004SH6327XTSA1 is the tape-and-reel variant of BAS70-04S with identical electrical specs and AEC-Q101 qualification; marking "74s" confirms this equivalence per Infineon's package documentation.
What is the maximum allowable forward current at 85 °C ambient?
At TA = 85 °C, the derated forward current is approximately 42 mA, calculated from the IF vs. TS curve for BAS70-04/BAS70-06 configurations. This reflects thermal limitation due to RthJS ≤410 K/W and Ptot = 250 mW, ensuring TJ remains ≤150 °C under continuous DC load.
Does BAS7004SH6327XTSA1 support bidirectional ESD protection?
No - as a Schottky diode with unidirectional conduction, it provides clamping only in forward bias (anode-to-cathode) and reverse blocking up to 70 V. For bidirectional ESD protection, a dedicated TVS array or back-to-back Schottky pair would be required; this device is intended for single-polarity signal conditioning.
Can BAS7004SH6327XTSA1 be used in 2.4 GHz WiFi front-ends?
Yes - its 1.5 pF capacitance and 100 ps reverse recovery time support operation up to ~3 GHz. Measured CT vs. VR curves show <1.2 pF at 2.4 V reverse bias, and low series inductance (1.4 nH) maintains impedance stability, making it suitable for antenna switch control and PA output stage clamping in 2.4 GHz ISM-band designs.
BAS7004SH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BAS7004SH6327XTSA1 FAQ
1.How can I place an order for BAS7004SH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS7004SH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS7004SH6327XTSA1 reliable?
The price and inventory of BAS7004SH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS7004SH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAS7004SH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS7004SH6327XTSA1 transactions.
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4.How is shipping managed for BAS7004SH6327XTSA1?
BAS7004SH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS7004SH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS7004SH6327XTSA1?
For technical support, including BAS7004SH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS7004SH6327XTSA1 requirements.
6.How does Aetrix verify that BAS7004SH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAS7004SH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS7004SH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAS7004SH6327XTSA1?
All BAS7004SH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS7004SH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS7004SH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAS7004SH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS7004SH6327XTSA1 Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
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