Diodes Incorporated BAS70-04T-7-F

Overview

BAS70-04T-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT523 package, rated for 70 V peak repetitive reverse voltage, 70 mA forward current, and 150 mW power dissipation, with 410–1000 mV forward voltage at 1–15 mA and 5.0 ns reverse recovery time. It serves as a high-speed signal clamping or polarity protection device in low-power analog front-ends and USB data line protection circuits.

For engineers reviewing the BAS70-04T-7-F datasheet, BAS70-04T-7-F pinout, BAS70-04T-7-F application, or BAS70-04T-7-F equivalent, key selection criteria include its ultra-low VF at low IF, sub-5 ns trr, 2.0 pF junction capacitance at 0 V, and AEC-Q101 readiness for automotive signal conditioning where ESD robustness and thermal stability across –55°C to +125°C are required.

Technical Context

This Schottky diode uses a planar epitaxial structure with PN junction guard ring to suppress transient-induced latch-up and enhance ESD survivability per IEC 61000-4-2 Level 4 (±15 kV air/±8 kV contact). Its low forward voltage enables efficient voltage clamping in 3.3 V and 5 V logic interfaces without excessive conduction loss.

The device operates with minimal self-heating due to 833 °C/W junction-to-ambient thermal resistance on FR-4 PCBs using recommended pad layout, and maintains stable leakage (<100 nA at 50 V) and capacitance (≤2.0 pF) across its full operating temperature range.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small 3-pin surface-mount plastic package (1.60 × 1.60 × 0.75 mm), lead-free, RoHS- and "Green"-compliant, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and NSR0230HT1G, BAS70-04T-7-F uniquely balances 70 V ruggedness, sub-5 ns speed, and integrated ESD protection-making it the only choice among the three for 5 V/12 V mixed-signal interfaces demanding both voltage headroom and transient immunity.

Availability

BAS70-04T-7-F is available at Aetrix Electronics and suitable for USB interface protection, automotive LIN bus conditioning, portable medical sensor front-ends, and low-power IoT node signal clamping requiring stable component supply and long-term lifecycle support.

Supply support for BAS70-04T-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS70 series belongs to Diodes' high-reliability Schottky diode product line, engineered specifically for signal integrity preservation and ESD-hardened operation in automotive, industrial, and portable electronics where compact size and fast response are critical.

FAQ

What is the maximum reverse voltage rating for BAS70-04T-7-F?

The BAS70-04T-7-F has a peak repetitive reverse voltage (VRRM) rating of 70 V, verified per DS30261 Rev. 12–2 test conditions. This rating applies at TA = +25°C and remains valid down to –55°C and up to +125°C, with derating governed by the 833 °C/W thermal resistance and ambient temperature curve shown in Figure 4 of the datasheet.

Does BAS70-04T-7-F have automotive qualification?

The BAS70-04T-7-F is built in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101 out-of-box, Diodes states that automotive-grade versions (with change control and qualification testing) are available upon request-confirming suitability for automotive signal line protection when specified with appropriate qualification path.

How does the PN junction guard ring improve reliability?

The PN junction guard ring in BAS70-04T-7-F surrounds the active Schottky region to suppress edge breakdown during voltage transients, thereby increasing ESD withstand capability to ±8 kV contact (IEC 61000-4-2) and improving immunity to system-level surges like ISO 7637-2 Pulse 1. It also reduces parameter drift under repeated ESD stress.

Can BAS70-04T-7-F replace BAS70-05T-7-F or BAS70-06T-7-F in a design?

No-BAS70-04T-7-F, -05T-7-F, and -06T-7-F share identical package and construction but differ in forward voltage grading: -04T is binned to VF ≤ 410 mV @ 1 mA, while -05T and -06T are higher-VF variants (≤500 mV and ≤600 mV respectively). Substitution requires revalidation of clamping threshold and power loss in the target circuit.