Infineon Technologies BAS70-04WE6327
- Part No.:
- BAS70-04WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS70-04WE6327.pdf
- Description:
- DIODE ARR SCHOTT 70V SOT323-3-1
- Quantity:
- Payment:

- Shipping:

Inventory:6,000
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Product details
Overview
BAS70-04WE6327 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common-cathode dual diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation at ≤48 °C case temperature. It delivers low forward voltage (720 mV max at 15 mA), 2 pF capacitance at 0 V, and 100 ps reverse recovery time for high-speed switching in signal routing and clamping circuits.
For engineers reviewing the BAS70-04WE6327 datasheet, BAS70-04WE6327 pinout, BAS70-04WE6327 application, or BAS70-04WE6327 equivalent, key selection criteria include dual common-cathode topology, thermal derating profile (Ptot = 250 mW only up to TS ≤ 48 °C), VF matching ≤20 mV, and AEC-Q101 qualification for automotive signal conditioning.
Technical Context
This dual Schottky diode integrates two independent anodes sharing one cathode terminal, enabling bidirectional clamping or dual-path signal steering without cross-conduction. Its 1.4 nH series inductance and 34 Ω typical forward resistance at 10 kHz support RF detector and mixer applications up to UHF frequencies.
The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C and storage range extended to +150 °C. Reverse leakage stays below 0.1 µA at 50 V, ensuring stable biasing in precision analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 70 V - supports clamping of transient spikes up to automotive load-dump levels |
| Forward Current | 70 mA - sufficient for low-power logic-level signal routing and detector biasing |
| Forward Voltage | 720 mV max at 15 mA - enables efficient low-voltage signal rectification with minimal drop |
| Diode Capacitance | 2 pF max at 0 V - preserves signal integrity in >500 MHz RF mixing and detection paths |
| Reverse Recovery Time | 100 ps - ensures clean edge transitions in high-speed digital and pulse applications |
| Thermal Resistance | 170 K/W (junction-to-solder point) - requires careful PCB copper area design for sustained 70 mA operation |
| VF Matching | ≤20 mV at 10 mA - guarantees balanced conduction in dual-path sensing or redundancy circuits |
Pinout & Package
SOT323 package: 3-pin surface-mount plastic case with gull-wing leads; pin 1 = Anode 1, pin 2 = Cathode (common), pin 3 = Anode 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input path for first diode branch; connects to signal source or clamp node |
| Pin 2 | Cathode (common) | Shared return node; must be routed to lowest-impedance ground or reference rail |
| Pin 3 | Anode 2 | Input path for second diode branch; enables dual independent clamping or steering |
Key Features
| Feature | Design Value |
|---|---|
| Common-cathode dual configuration | Enables compact dual-channel protection or signal routing without external interconnect |
| AEC-Q101 qualified | Validated for automotive electronics including body control modules and sensor interfaces |
| Low 1.4 nH series inductance | Minimizes parasitic resonance in RF detector and mixer designs above 400 MHz |
| Pb-free (RoHS compliant) | Meets EU Directive 2011/65/EU and supports lead-free reflow soldering profiles |
| 150 °C maximum junction temperature | Allows operation in under-hood environments with minimal thermal margin loss |
Applications
| Automotive Signal Clamping | RF Detector Circuit |
|---|---|
Use Scenario: Protecting LIN bus transceiver inputs from ESD and load-dump transients in vehicle door modules. IC Role / Device Role / Timing Role: Dual Schottky clamp limiting input voltage to ±0.7 V while preserving signal rise/fall times. Use Value: Prevents latch-up in 5 V tolerant transceivers using 70 V standoff and <100 ps response. | Use Scenario: Demodulating 868 MHz ISM band signals in TPMS sensor nodes. IC Role / Device Role / Timing Role: Low-capacitance (2 pF) Schottky anode detecting RF envelope with minimal phase distortion. Use Value: Achieves >–25 dBm sensitivity with 34 Ω forward resistance and matched VF across dual paths. |
| High-Speed Logic Level Shifting | Precision Analog Multiplexing |
Use Scenario: Translating 1.8 V GPIO signals to 3.3 V domain in infotainment SoC interfaces. IC Role / Device Role / Timing Role: Bidirectional level translator using common-cathode topology with sub-ns switching. Use Value: Maintains signal integrity up to 100 Mbps with 720 mV forward drop and no DC bias dependency. | Use Scenario: Selecting between two thermistor inputs in battery management system front-end. IC Role / Device Role / Timing Role: Low-leakage (<0.1 µA) dual diode isolating measurement paths during ADC sampling. Use Value: Eliminates crosstalk-induced offset errors with ≤20 mV VF matching and 150 °C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F70HT1G | Same SOT323 package, common-cathode, but 200 mA IF rating and higher VF (820 mV max at 15 mA) | Higher current capability suits 3.3 V I/O protection; less optimal for low-VF RF detection | Select when surge robustness >70 mA is required and VF tolerance >100 mV is acceptable |
| Diodes Incorporated BAV99LT1G | Same footprint and dual common-cathode structure, but standard PN junction (not Schottky); 70 V VR, 215 ps trr | Lower cost for non-RF applications; unsuitable for >200 MHz signal paths due to slower recovery | Choose for general-purpose clamping where RF performance is not critical and cost is primary |
Compared with BAS70-04WE6327, NSR20F70HT1G trades lower VF for higher current headroom, while BAV99LT1G sacrifices RF speed and low-VF advantage for broader availability and lower unit cost in non-high-frequency roles.
Availability
BAS70-04WE6327 is available at Aetrix Electronics and suitable for automotive signal clamping, RF detector circuits, high-speed logic level shifting, and precision analog multiplexing requiring stable component supply across production lifecycles.
Supply support for BAS70-04WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The BAS70 family targets high-reliability signal conditioning in automotive and industrial systems, emphasizing AEC-Q101 qualification, low parasitics, and thermal robustness in miniature packages.
FAQ
What is the maximum continuous forward current for BAS70-04WE6327 at 85 °C ambient?
At 85 °C ambient, the device's thermal derating curve limits continuous forward current to approximately 45 mA. This is derived from the specified Ptot = 250 mW only up to TS ≤ 48 °C, and the thermal resistance RthJS = 170 K/W. Exceeding this current risks junction temperature exceeding 150 °C, triggering thermal shutdown or degradation.
Is BAS70-04WE6327 suitable for USB 2.0 data line ESD protection?
No - while it offers low capacitance (2 pF), its 70 V reverse standoff exceeds USB 2.0's 5.5 V VBUS requirement, and its 0.1 µA IR at 50 V is too high for reliable high-impedance data line biasing. Dedicated low-capacitance TVS diodes like SPUSBxx series are better suited for full-speed USB ESD compliance.
How does the common-cathode configuration affect PCB layout?
The shared cathode (Pin 2) must connect to a low-inductance, low-impedance reference plane-ideally a dedicated ground pour with multiple vias-to prevent coupling between the two anode paths. Separating cathode traces or routing them over split planes introduces imbalance, degrading VF matching and increasing effective series inductance beyond the specified 1.4 nH.
Does BAS70-04WE6327 support reflow soldering per JEDEC J-STD-020?
Yes - as a Pb-free RoHS-compliant device in SOT323 package, it is qualified for lead-free reflow per JEDEC J-STD-020D. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp rates ≤3 °C/s before and after peak. Preheating to 150–200 °C for 60–120 seconds is recommended to avoid thermal shock.
BAS70-04WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323-3-1
BAS70-04WE6327 FAQ
1.How can I place an order for BAS70-04WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-04WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-04WE6327 reliable?
The price and inventory of BAS70-04WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-04WE6327 is usually 5 days.
3.What payment methods are accepted for BAS70-04WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-04WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-04WE6327?
BAS70-04WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-04WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-04WE6327?
For technical support, including BAS70-04WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-04WE6327 requirements.
6.How does Aetrix verify that BAS70-04WE6327 is sourced from the original manufacturer or authorized distributors?
All BAS70-04WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-04WE6327 meets industry standards.
7.What is the process for return or replacement of BAS70-04WE6327?
All BAS70-04WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-04WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-04WE6327 part is unused and in its original packaging.
Return procedure for BAS70-04WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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