Nexperia USA Inc. BAS70-04WF
- Part No.:
- BAS70-04WF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS70-04WF.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:3,345
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Product details
Overview
BAS70-04WF from Nexperia is a general-purpose dual Schottky diode in SOT323 (SC-70) package, configured as two independent diodes sharing a common terminal (A1–K1 and A2–K2). It delivers 70 V reverse voltage rating, 70 mA forward current capability, 410 mV forward voltage at 1 mA, 2 pF capacitance at 0 V, and 100 nA reverse leakage at 50 V - enabling ultra-high-speed switching and low-loss clamping in compact DC-DC and signal routing circuits.
For engineers reviewing the BAS70-04WF datasheet, BAS70-04WF pinout, BAS70-04WF application, or BAS70-04WF equivalent, key selection criteria include its dual-diode topology with shared cathode/anode configuration, low VF for minimal conduction loss, sub-2 pF junction capacitance for RF-sensitive paths, and thermal resistance of 500 K/W on FR4 PCB - critical for space-constrained power management and ESD protection designs.
Technical Context
This dual Schottky diode integrates two independent junctions in a single SC-70 package with pin 1 = A1, pin 2 = K2, pin 3 = K1/A2 - forming a common-cathode (D1) and common-anode (D2) pair. Its architecture supports bidirectional clamping and OR-ing functions without external interconnects.
Designed for high-frequency operation, it exhibits 2 pF capacitance at 0 V reverse bias and maintains stable VF across −40 °C to 125 °C ambient, with typical forward voltage ranging from 410 mV (1 mA) to 1 V (15 mA), and reverse leakage staying below 10 µA up to 70 V at 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V and 54 V supply rails without breakdown |
| Forward Current (IF) | 70 mA continuous - suitable for low-power signal path steering and logic-level translation |
| Forward Voltage (VF) | 410 mV @ 1 mA - minimizes conduction loss in battery-powered sensing nodes |
| Junction Capacitance (Cd) | 2 pF @ 0 V, 1 MHz - enables use in >500 MHz RF detector and antenna switch applications |
| Reverse Leakage (IR) | 100 nA @ 50 V - ensures low standby current in always-on voltage monitor circuits |
| Thermal Resistance (Rth(j-a)) | 500 K/W on FR4 - defines maximum power dissipation of ~150 mW before exceeding 150 °C junction limit |
Pinout & Package
The BAS70-04WF is housed in a 3-pin SOT323 (SC-70) surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm, with 1.3 mm lead pitch and tin-plated terminations compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first Schottky path; connects to source in clamp or OR-ing configuration |
| 2 | Cathode of Diode 2 (K2) | Output node for second diode; used for polarity-reversed clamping or isolation |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1; A2) | Shared terminal enabling compact dual-path routing without external trace coupling |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-nanosecond recovery enabled by low stored charge and Schottky barrier physics |
| Low leakage current | 100 nA @ 50 V ensures <1 µW standby dissipation in always-on monitoring circuits |
| High breakdown voltage | 70 V VR rating allows direct interface with industrial 48 V bus systems |
| Low capacitance | 2 pF junction capacitance preserves signal integrity in 500+ MHz RF front-end paths |
Applications
| Power Rail Clamping | Signal-Level OR-ing |
|---|---|
Use Scenario: Protecting 3.3 V microcontroller I/O pins from transient overvoltage during hot-swap events. IC Role / Device Role / Timing Role: Dual Schottky clamps each signal line to VCC and GND using shared-terminal topology. Use Value: 410 mV VF limits clamp threshold to ~3.7 V, preventing latch-up while maintaining logic margin. |
Use Scenario: Selecting between two independent 5 V power sources in redundant sensor modules. IC Role / Device Role / Timing Role: Acts as passive OR-ing diode pair with pin 3 as common output node. Use Value: 70 mA IF rating supports 100 mA load with derating; low VF avoids >100 mV dropout per rail. |
| RF Detector Input Stage | Low-Power Logic Translation |
Use Scenario: Demodulating AM signals in sub-GHz ISM band receivers with minimal loading. IC Role / Device Role / Timing Role: Forms half-wave rectifier in detector circuit with 2 pF Cd preserving bandwidth. Use Value: Low capacitance enables >500 MHz small-signal response; 100 nA IR prevents DC offset drift. |
Use Scenario: Level-shifting UART TX/RX lines between 1.8 V MCU and 3.3 V transceiver. IC Role / Device Role / Timing Role: Provides bidirectional clamping via dual diode arrangement to limit swing. Use Value: 410 mV VF ensures clamping occurs at 1.8 V + 0.41 V = 2.21 V, protecting 3.3 V receiver inputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F70HT1G | Higher IF (200 mA), higher VF (550 mV @ 1 mA), same SOT-323 package | Better suited for higher-current OR-ing; less optimal for ultra-low-VF clamping | Select when load current exceeds 70 mA but VF tolerance >550 mV is acceptable |
| Diodes Incorporated BAV99W-7-F | Lower VR (70 V same), higher IR (1 µA @ 50 V), identical pinout and Cd | Acceptable for cost-sensitive non-critical clamping; not recommended for low-leakage monitoring | Choose for price-driven consumer designs where 10× higher leakage is tolerable |
Compared with NSR20F70HT1G and BAV99W-7-F, the BAS70-04WF uniquely balances ultra-low VF (410 mV), ultra-low IR (100 nA), and 2 pF capacitance - making it optimal for precision clamping and RF-adjacent signal conditioning where all three parameters constrain design margins.
Availability
BAS70-04WF is available at Aetrix Electronics and suitable for ultra-high-speed switching, voltage clamping, RF detector input stages, and low-power logic translation requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAS70-04WF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.
The BAS70 series targets general-purpose Schottky applications demanding low VF, low Cd, and robust thermal performance in miniature packages - specifically optimized for space-constrained power management and signal integrity-critical roles.
FAQ
What is the maximum junction temperature for BAS70-04WF?
The absolute maximum junction temperature is 150 °C, as defined in the Absolute Maximum Ratings table. Operation above this temperature risks permanent degradation of the Schottky barrier and increased reverse leakage. Derating is required above 25 °C ambient based on Rth(j-a) = 500 K/W and actual power dissipation.
Is BAS70-04WF automotive qualified?
No. Per Nexperia's revision history and legal disclaimers, BAS70-04WF is explicitly designated as non-automotive qualified. It has not undergone AEC-Q101 stress testing or qualification for automotive environments. For automotive use, Nexperia recommends its -Q qualified variants such as BAS70-04W-Q.
How does the shared pin (pin 3) function in circuit design?
Pin 3 serves as both cathode of diode 1 (K1) and anode of diode 2 (A2), enabling compact dual-path configurations: e.g., clamping one signal to VCC (via D1) and another to GND (via D2) using only three PCB traces. This eliminates need for external node tying and reduces parasitic inductance in high-speed layouts.
Can BAS70-04WF replace BAS70-04W in existing designs?
Yes - BAS70-04WF is a direct form-fit-function replacement for BAS70-04W, sharing identical electrical specifications, pinout, package dimensions, and thermal characteristics. The 'F' suffix denotes tape-and-reel packaging per JEDEC standard; no electrical or mechanical differences exist between the base and 'F' variants.
BAS70-04WF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAS70-04WF FAQ
1.How can I place an order for BAS70-04WF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-04WF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-04WF reliable?
The price and inventory of BAS70-04WF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-04WF is usually 5 days.
3.What payment methods are accepted for BAS70-04WF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-04WF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-04WF?
BAS70-04WF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-04WF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-04WF?
For technical support, including BAS70-04WF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-04WF requirements.
6.How does Aetrix verify that BAS70-04WF is sourced from the original manufacturer or authorized distributors?
All BAS70-04WF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-04WF meets industry standards.
7.What is the process for return or replacement of BAS70-04WF?
All BAS70-04WF units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-04WF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-04WF part is unused and in its original packaging.
Return procedure for BAS70-04WF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-04WF Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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