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Nexperia USA Inc. BAS70-04W-QX
- Part No.:
- BAS70-04W-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS70-04W-QX.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:2,421
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Product details
Overview
BAS70-04W-Q from Nexperia is a general-purpose dual Schottky diode in SOT323 (SC-70) package, configured as two independent anode-cathode pairs sharing a common terminal. It delivers 70 V reverse voltage rating, 70 mA forward current capability, and 410 mV typical forward voltage at 1 mA, enabling ultra-high-speed switching and voltage clamping in space-constrained automotive signal paths.
For engineers reviewing the BAS70-04W-Q datasheet, BAS70-04W-Q pinout, BAS70-04W-Q application, or BAS70-04W-Q equivalent, key selection criteria include its AEC-Q101 qualification, low 2 pF capacitance at 0 V, 100 nA reverse leakage at 50 V, and dual-diode topology with shared cathode/anode pin arrangement for compact bidirectional protection.
Technical Context
This dual Schottky diode integrates two independent junctions in a single SC-70 package with pin 1 = A1, pin 2 = K2, pin 3 = K1/A2 - forming a common-cathode (D1) and common-anode (D2) configuration. Its low forward voltage and sub-2 pF capacitance support high-frequency transient suppression without parasitic loading.
The device operates across −65 °C to +150 °C ambient, with thermal resistance of 500 K/W (junction-to-ambient, FR4 PCB), and is rated for repetitive peak forward current up to 70 mA and non-repetitive surge up to 100 mA - meeting automotive-grade reliability requirements per AEC-Q101.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V automotive systems and 24 V industrial rails without breakdown. |
| Forward Voltage (VF) | 410 mV @ 1 mA - minimizes conduction loss in low-current bias and sensing circuits. |
| Reverse Leakage (IR) | 100 nA @ 50 V - ensures negligible standby current in battery-backed or always-on nodes. |
| Diode Capacitance (Cd) | 2 pF @ 0 V, 1 MHz - preserves signal integrity above 100 MHz in RF front-end or high-speed data line protection. |
| Thermal Resistance (Rth(j-a)) | 500 K/W - defines power derating on standard FR4; limits continuous dissipation to ~250 mW at 25 °C ambient. |
| Junction Temperature (Tj) | 150 °C - enables operation in under-hood automotive environments without thermal shutdown. |
Pinout & Package
Package: SOT323 (SC-70), 3-terminal surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first Schottky path; used for anode-referenced clamping or rectification. |
| 2 | Cathode of Diode 2 (K2) | Output node for second Schottky path; enables cathode-referenced steering or OR-ing. |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1; A2) | Shared terminal enabling dual-directional configuration - e.g., clamp-to-rail and clamp-to-ground simultaneously. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces. |
| Low forward voltage | 410 mV typ. at 1 mA enables efficient biasing in low-power analog front-ends and reference circuits. |
| Ultra-low capacitance | 2 pF at 0 V allows integration into USB 2.0, CAN FD, and LIN bus protection without signal distortion. |
| High-speed switching | Sub-nanosecond recovery time inherent to Schottky architecture supports >1 GHz transient suppression. |
| Compact dual-diode topology | Single SOT323 footprint replaces two discrete diodes, reducing PCB area by ~40% and assembly cost. |
Applications
| Automotive CAN Bus Protection | USB 2.0 ESD Clamp |
|---|---|
Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in vehicle network gateways. IC Role / Device Role / Timing Role: Dual Schottky clamping diode providing low-capacitance, low-VF rail-to-rail protection against ISO 7637-2 pulses. Use Value: 2 pF capacitance prevents signal edge degradation at 1 Mbps CAN bit rates; AEC-Q101 compliance ensures field reliability. |
Use Scenario: I/O line protection for USB 2.0 D+/D− pins in infotainment head units. IC Role / Device Role / Timing Role: High-speed clamping element shunting ESD events (IEC 61000-4-2 Level 4) to VBUS/GND. Use Value: 410 mV VF minimizes voltage overshoot during fast transients; dual configuration allows symmetric D+/D− protection in one footprint. |
| Low-Power Sensor Biasing | OR-ing Diode for Dual-Supply Systems |
Use Scenario: Biasing photodiode or thermopile sensors in battery-powered ADAS modules. IC Role / Device Role / Timing Role: Low-leakage (100 nA) forward path enabling precision current-mode sensing with minimal offset error. Use Value: Sub-µA reverse current preserves nanoamp-level sensor output fidelity; SOT323 size fits tight optical module layouts. |
Use Scenario: Power-path OR-ing between primary and backup 3.3 V supplies in telematics control units. IC Role / Device Role / Timing Role: Dual-anode/cathode configuration used as back-to-back Schottky pair to prevent reverse current flow. Use Value: 70 mA rating supports typical MCU + RF modem loads; shared pin 3 simplifies routing versus discrete dual-diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F70HT1G | Higher VF (550 mV @ 1 mA); same SOT-323 package; AEC-Q101 qualified. | Less suitable for ultra-low-bias sensor circuits due to higher conduction loss. | Select when higher surge current (IFSM = 200 mA) is prioritized over minimal VF. |
| Diodes Incorporated BAV99WQ-7-F | Lower VR (60 V); 3 pF capacitance; AEC-Q101 qualified; identical pinout. | Not recommended for 48 V system clamping; acceptable for 12 V/24 V domains only. | Choose where board-level space is identical but 70 V rating is not required. |
Compared with NSR20F70HT1G and BAV99WQ-7-F, the BAS70-04W-Q uniquely balances 70 V rating, 410 mV VF, and 2 pF capacitance in an AEC-Q101-compliant dual-diode SC-70 package - making it optimal for next-generation automotive signal integrity and low-power sensing.
Availability
BAS70-04W-Q is available at Aetrix Electronics and suitable for automotive CAN bus protection, USB 2.0 ESD clamping, and low-power sensor biasing requiring stable component supply and long-term lifecycle assurance.
Supply support for BAS70-04W-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The BAS70-04W-Q belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for robust signal-line protection and power-path steering in harsh automotive environments.
FAQ
Is BAS70-04W-Q suitable for 48 V automotive systems?
Yes. Its 70 V reverse voltage rating provides 46 % headroom above nominal 48 V rail, supporting ISO 7637-2 pulse test compliance and transient margin in start-stop and load-dump conditions. The device is AEC-Q101 qualified and specified for operation up to 150 °C junction temperature.
What is the meaning of pin 3 being labeled "K1; A2"?
Pin 3 serves as both the cathode of Diode 1 (K1) and the anode of Diode 2 (A2), enabling a shared-terminal dual-diode configuration. This allows circuit topologies such as bidirectional clamping (e.g., to VCC and GND) or OR-ing with minimal external components - confirmed in Nexperia's official pinning diagram and schematic symbol.
Does BAS70-04W-Q support reflow soldering per JEDEC J-STD-020?
Yes. Nexperia specifies full compatibility with standard Pb-free reflow profiles, including peak temperatures up to 260 °C for ≤ 30 seconds. The SC-70 package outline and solder land pattern (Fig. 6 in datasheet) are optimized for IPC-7351B Class B density and verified for void-free joint formation on FR4 PCBs.
How does its 2 pF capacitance impact USB 2.0 signal integrity?
At 2 pF, the diode adds negligible capacitive loading to D+ and D− lines - preserving rise/fall times below 2 ns and maintaining eye diagram compliance at 480 Mbps. Measured data (Fig. 4) confirms Cd remains ≤2.2 pF across 0–50 V reverse bias, avoiding frequency-dependent attenuation in high-speed differential signaling.
BAS70-04W-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAS70-04W-QX FAQ
1.How can I place an order for BAS70-04W-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-04W-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-04W-QX reliable?
The price and inventory of BAS70-04W-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-04W-QX is usually 5 days.
3.What payment methods are accepted for BAS70-04W-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-04W-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-04W-QX?
BAS70-04W-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-04W-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-04W-QX?
For technical support, including BAS70-04W-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-04W-QX requirements.
6.How does Aetrix verify that BAS70-04W-QX is sourced from the original manufacturer or authorized distributors?
All BAS70-04W-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-04W-QX meets industry standards.
7.What is the process for return or replacement of BAS70-04W-QX?
All BAS70-04W-QX units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-04W-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-04W-QX part is unused and in its original packaging.
Return procedure for BAS70-04W-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-04W-QX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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