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Diodes Incorporated BAS70-05-7
- Part No.:
- BAS70-05-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS70-05-7.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT233
- Quantity:
- Payment:
- Shipping:
Inventory:8,929
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Product details
Overview
BAS70-05-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 70 V peak reverse voltage, 70 mA forward current, and 410 mV max forward voltage at 1.0 mA. It features a PN junction guard ring for transient and ESD protection, and is optimized for low-loss signal clamping and high-speed switching in space-constrained DC-DC converter feedback paths.
For engineers reviewing the BAS70-05-7 datasheet, BAS70-05-7 pinout, BAS70-05-7 application, or BAS70-05-7 equivalent, key selection criteria include its 5.0 ns reverse recovery time, 2.0 pF junction capacitance at 0 V, 100 nA max reverse leakage at 50 V, and thermal resistance of 625 °C/W - all critical for high-frequency rectification and RF detector designs.
Technical Context
This Schottky diode uses a planar epitaxial construction with integrated PN guard ring to suppress edge breakdown and improve ESD robustness without compromising switching speed. Its low 410 mV forward voltage at 1.0 mA enables efficient signal-level detection and biasing in low-power analog circuits.
The device operates across –55 °C to +125 °C junction temperature range and exhibits stable reverse characteristics up to 50 V, with typical reverse current below 10 nA at 25 V. Its 2.0 pF capacitance and 5.0 ns tRR support operation beyond 100 MHz in mixer and detector applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRRM) | 70 V - supports input rectification in 48 V telecom and industrial power rails without avalanche risk |
| Forward Voltage (VF) | 410 mV max @ 1.0 mA - minimizes signal loss in RF detector and precision clamp circuits |
| Reverse Recovery Time (tRR) | 5.0 ns - enables clean switching in >100 MHz oscillator and sampling applications |
| Junction Capacitance (CT) | 2.0 pF @ 0 V - preserves high-frequency impedance matching in RF front-end bias networks |
| Reverse Leakage (IR) | 100 nA max @ 50 V - ensures stable DC reference integrity in low-current sensor interfaces |
| Thermal Resistance (RθJA) | 625 °C/W - defines derating slope on standard FR-4 PCBs with recommended pad layout |
| Operating Temperature | –55 °C to +125 °C - qualified for under-hood automotive and industrial control environments |
Pinout & Package
Package: SOT23 - 3-terminal plastic surface-mount package with 2.4 mm × 1.3 mm footprint, 1.0 mm height, and matte tin-plated alloy 42 leadframe compliant with J-STD-020 moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry point under forward bias | Connected to lower-potential node in clamping or rectifying configuration; polarity marked by cathode band on package top view |
| Cathode (Pin 2) | Current exit point under forward bias | Connected to higher-potential node; serves as reference terminal in RF detector output and ESD shunt path |
| NC / Heat Sink (Pin 3) | No internal connection | Unused terminal; may be grounded or left floating per layout requirements - not electrically tied to die |
Key Features
| Feature | Design Value |
|---|---|
| PN Junction Guard Ring | Suppresses edge breakdown during ESD events (IEC 61000-4-2 Level 4) while maintaining <5 ns tRR |
| Low Forward Voltage | 410 mV max at 1.0 mA enables accurate signal detection down to –30 dBm RF input levels |
| Fast Switching Speed | 5.0 ns reverse recovery supports use in 100+ MHz sampling gates and pulse shaping circuits |
| Green Compliance | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets RoHS 3 and JEDEC M122 |
Applications
| RF Signal Detector | High-Speed Clamp Circuit |
|---|---|
Use Scenario: Demodulating AM signals in 868 MHz ISM-band receivers with minimal distortion. IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to baseband DC voltage. Use Value: 2.0 pF capacitance and 5.0 ns tRR preserve signal fidelity above 100 MHz; 410 mV VF ensures linear response at microamp input currents. | Use Scenario: Protecting ADC inputs from overvoltage transients in motor control feedback loops. IC Role / Device Role / Timing Role: Fast-acting clamping diode limiting analog input to ±0.4 V beyond rail. Use Value: PN guard ring withstands 8 kV contact ESD per IEC 61000-4-2 without parameter shift; 100 nA IR avoids loading high-impedance sensors. |
| DC-DC Feedback Rectifier | Low-Power Bias Generator |
Use Scenario: Providing isolated feedback path in 5 V → 3.3 V flyback converters for industrial PLC modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in optocoupler feedback network. Use Value: 70 V VRRM accommodates reflected flyback spikes; 625 °C/W RθJA allows operation at full load on compact 2-layer PCBs. | Use Scenario: Generating precise bias voltages for op-amp input stages in battery-powered IoT sensor nodes. IC Role / Device Role / Timing Role: Low-current forward-biased reference diode establishing stable offset voltage. Use Value: 410 mV VF provides predictable, temperature-stable ~0.4 V reference; –55 °C to +125 °C rating ensures accuracy across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SBAT54LT1G | Higher VF (460 mV min), same SOT23-3, 30 V VRRM | Limited to ≤30 V systems; unsuitable for 48 V telecom or industrial feedback paths | Select only when reverse voltage requirement is ≤30 V and higher VF tolerance is acceptable |
| BAT54C-7-F | Dual common-cathode configuration, 30 V VRRM, 450 mV VF max | Requires redesign for single-diode topology; lower voltage rating restricts use in higher-voltage rails | Choose only if dual-diode functionality is needed and system VR stays below 30 V |
Compared with SBAT54LT1G and BAT54C-7-F, BAS70-05-7 delivers 70 V blocking capability and 410 mV forward voltage - enabling direct use in 48 V power systems and ultra-low-signal RF detection where lower VF and higher VRRM are design-critical.
Availability
BAS70-05-7 is available at Aetrix Electronics and suitable for RF detector modules, industrial DC-DC feedback networks, and ESD-protected analog input clamps requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS70-05-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The BAS70 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-voltage, high-frequency signal conditioning and protection in space-constrained industrial, telecom, and consumer applications.
FAQ
What is the maximum continuous forward current rating for BAS70-05-7?
The maximum continuous forward current (IF) is 70 mA at TA = +25 °C on an FR-4 board with recommended pad layout. Derating applies above 25 °C ambient, following the 625 °C/W thermal resistance curve - e.g., 50 mA at 70 °C ambient, 35 mA at 100 °C ambient.
Does BAS70-05-7 have automotive qualification?
No - only the BAS70-04Q variant is AEC-Q101 qualified and PPAP capable. BAS70-05-7 is rated for industrial temperature range (–55 °C to +125 °C) but lacks automotive-specific change control, IATF 16949 traceability, or stress test reporting required for automotive use.
How does the PN junction guard ring affect ESD performance?
The integrated PN guard ring prevents premature edge breakdown during ESD transients, allowing the device to withstand ≥8 kV contact discharge (IEC 61000-4-2 Level 4) without parameter degradation. This structure maintains low capacitance and fast recovery while improving robustness over conventional Schottky-only designs.
Can BAS70-05-7 replace BAS70-04 in existing designs?
Yes, with verification - both share identical SOT23 package, pinout, and thermal specs, but BAS70-04 has 2.0 ns tRR (vs. 5.0 ns for BAS70-05-7) and is specified for 30 V VRRM. Substitution is safe only if reverse voltage remains ≤30 V and faster recovery is not required; otherwise, BAS70-05-7's 70 V rating offers broader margin.
BAS70-05-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
BAS70-05-7 FAQ
1.How can I place an order for BAS70-05-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-05-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-05-7 reliable?
The price and inventory of BAS70-05-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-05-7 is usually 5 days.
3.What payment methods are accepted for BAS70-05-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-05-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-05-7?
BAS70-05-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-05-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-05-7?
For technical support, including BAS70-05-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-05-7 requirements.
6.How does Aetrix verify that BAS70-05-7 is sourced from the original manufacturer or authorized distributors?
All BAS70-05-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-05-7 meets industry standards.
7.What is the process for return or replacement of BAS70-05-7?
All BAS70-05-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-05-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-05-7 part is unused and in its original packaging.
Return procedure for BAS70-05-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-05-7 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
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BAV99,215
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BAV99LT1G
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