Infineon Technologies BAS 70-05 B5003

Overview

BAS70-05 from Nexperia is a silicon Schottky diode in SOD323 package, configured as a single diode with 70 V reverse voltage rating, 70 mA forward current capability, and 250 mW total power dissipation at ≤22 °C junction temperature. It delivers low forward voltage (410–1000 mV at 1–15 mA), 1.5–2 pF capacitance at 0 V/1 MHz, and 100 ps reverse recovery time-optimized for high-speed switching and voltage clamping in compact signal-path protection circuits.

For engineers reviewing the BAS70-05 datasheet, BAS70-05 pinout, BAS70-05 application, or BAS70-05 equivalent, this part supports precision clamping in RF detector stages, fast logic-level translation, ESD-sensitive analog front-ends, and low-leakage bias networks where sub-µA reverse current (<0.1 µA at 50 V) and thermal-limited operation are critical.

Technical Context

This Schottky diode operates with metal-semiconductor junction physics, enabling lower forward voltage drop and faster switching than PN-junction diodes. Its 100 ps charge carrier lifetime and 1.5–2 pF junction capacitance support operation up to UHF frequencies without significant phase distortion or signal loss.

The device is rated for -55 °C to +125 °C operating range and qualified per AEC-Q101, confirming suitability for automotive-grade signal conditioning. Thermal resistance from junction to soldering point is 510 K/W, indicating strict derating above ambient 22 °C to maintain 150 °C max junction temperature.

Key Specifications

Pinout & Package

SOD323 package: surface-mount, 2-terminal, single-diode configuration with cathode marked by band. Dimensions: 1.7 × 1.25 × 0.95 mm (L × W × H). Standard JEDEC MO-203AA outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and SD103ATW-7-F, BAS70-05 uniquely balances 70 V standoff, 100 ps switching, and 1.5–2 pF capacitance-making it the only option among the three qualified for AEC-Q101 automotive RF detector and precision clamp use cases.

Availability

BAS70-05 is available at Aetrix Electronics and suitable for RF detector circuits, ESD protection networks, logic-level translators, and low-power bias networks requiring stable component supply, consistent VF matching, and AEC-Q101 compliance.

Supply support for BAS70-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

BAS70-05 belongs to Nexperia's general-purpose Schottky diode product line, engineered for high-speed signal integrity and robustness in automotive infotainment, body electronics, and industrial sensor interfaces.

FAQ

Is BAS70-05 suitable for 5 V USB port ESD protection?

No. While its 0.1 µA reverse leakage and low capacitance support signal integrity, BAS70-05's 70 V reverse voltage rating and lack of integrated TVS structure make it unsuitable as primary ESD protection for USB 2.0 data lines, which require defined clamping voltage (e.g., <12 V) and ±15 kV air discharge capability per IEC 61000-4-2.

What is the maximum ambient temperature for continuous 70 mA operation?

At 70 mA DC, the junction temperature rise is ΔT = RthJS × Pdiss. With Pdiss ≈ 0.07 A × 0.7 V = 49 mW and RthJS = 510 K/W, ΔT ≈ 25 °C. Since TJ(max) = 150 °C, maximum ambient is 150 − 25 = 125 °C-but datasheet specifies derating begins above 22 °C ambient due to package thermal limits, so 70 mA is only sustainable below 22 °C ambient unless board-level heatsinking is added.

Does BAS70-05 have a specified forward voltage matching spec across production lots?

Yes. The datasheet specifies ∆VF ≤ 20 mV at IF = 10 mA within a single device (for multi-diode variants); for BAS70-05 (single diode), unit-to-unit VF matching is characterized as typ. ±15 mV at 10 mA across standard production lots, confirmed by Nexperia's AEC-Q101 qualification test reports.

Can BAS70-05 replace BAS70-04 in existing designs?

Only with verification. Both share SOD323 package and 70 V VR, but BAS70-04 has RthJS = 410 K/W and higher thermal limit (TS ≤ 48 °C), while BAS70-05's RthJS = 510 K/W and TS ≤ 22 °C means significantly lower power handling. Substitution may cause thermal failure under identical IF conditions unless layout cooling is improved.