Infineon Technologies BAS7005E6327HTSA1

Overview

BAS7005E6327HTSA1 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a single anode–cathode pair, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation at ≤22 °C case temperature. It delivers low forward voltage (410–1000 mV at 1–15 mA), 1.5–2 pF capacitance at 0 V/1 MHz, and 100 ps reverse recovery time-enabling high-speed switching in signal clamping and RF detector circuits.

For engineers reviewing the BAS7005E6327HTSA1 datasheet, BAS7005E6327HTSA1 pinout, BAS7005E6327HTSA1 application, or BAS7005E6327HTSA1 equivalent, key selection criteria include its 70 V VR rating, sub-1 V VF at 10 mA, 2 pF CT, 100 ps τrr, and SOT23 thermal derating curve limiting IF to 70 mA only below 22 °C ambient.

Technical Context

This Schottky diode uses a planar silicon process optimized for low junction capacitance and fast carrier lifetime. Its 100 ps reverse recovery time and 1.5–2 pF capacitance at zero bias support operation up to UHF frequencies in mixer and detector stages.

The device exhibits a forward voltage spread of ≤20 mV across dual-diode variants, confirming tight matching for balanced applications; its thermal resistance RthJS is ≤510 K/W, requiring strict PCB copper area management to sustain rated current at elevated temperatures.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.1 mm height, suitable for automated placement and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAS7005E6327HTSA1, SBAT54LT1G offers lower capacitance at the cost of higher forward drop, while BAT54CW provides dual-diode symmetry in a different package-neither matches its combination of 70 V rating, SOT23 size, and 100 ps τrr in a single discrete unit.

Availability

BAS7005E6327HTSA1 is available at Aetrix Electronics and suitable for RF detector design, ESD-protected I/O interface development, and low-power battery isolation circuits requiring stable component supply across automotive, industrial, and IoT production programs.

Supply support for BAS7005E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

The BAS70 family targets high-frequency signal conditioning applications, emphasizing low capacitance, fast recovery, and AEC-Q101 qualification for automotive radar, wireless sensing, and robust industrial control interfaces.

FAQ

What is the maximum continuous forward current for BAS7005E6327HTSA1 at 85 °C ambient?

At 85 °C ambient, the device's thermal derating curve limits continuous forward current to approximately 35 mA. This is derived from its 250 mW power rating and RthJS ≤510 K/W, resulting in ~130 °C junction rise-well below the 150 °C TJ max. Operation above this requires pulsed duty cycling or enhanced PCB cooling.

Is BAS7005E6327HTSA1 suitable for use in 2.4 GHz Wi-Fi antenna switch control?

Yes-it is suitable for low-loss RF switching control paths due to its 1.5–2 pF capacitance and 100 ps τrr, which minimize insertion loss and switching transient ringing. However, it must be used in series-shunt configurations with proper impedance matching, as it lacks integrated driver circuitry or SPDT functionality.

Does BAS7005E6327HTSA1 have a specified reverse recovery charge (Qrr)?

No, Qrr is not specified in the official Infineon datasheet for this part. The datasheet provides only τrr = 100 ps (measured at IF = 25 mA). For designs sensitive to stored charge, empirical measurement or simulation using the provided VF/IR/CT curves is recommended, as Qrr cannot be reliably derived from τrr alone in Schottky devices.

Can BAS7005E6327HTSA1 replace BAT54 in existing SOT23 footprints?

Yes-BAS7005E6327HTSA1 shares identical SOT23 pinout and mechanical dimensions with BAT54-series diodes. However, its 70 V VR rating exceeds BAT54's 30 V, and its VF is slightly higher at low currents; verify system voltage margins and detector sensitivity before drop-in replacement.