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Infineon Technologies BAS7005E6433HTMA1
- Part No.:
- BAS7005E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS7005E6433HTMA1.pdf
- Description:
- DIODE ARRAY SCHOT 70V 70MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:29,975
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Product details
Overview
BAS7005E6433HTMA1 from Infineon Technologies is a silicon Schottky diode in SOT23 package, configured as a single diode with 70 V reverse voltage rating, 70 mA forward current, and 375 mV typical forward voltage at 10 mA. It serves in high-speed switching, voltage clamping, and signal mixing circuits for consumer USB interface protection and portable battery management systems.
For engineers reviewing the BAS7005E6433HTMA1 datasheet, BAS7005E6433HTMA1 pinout, BAS7005E6433HTMA1 application, or BAS7005E6433HTMA1 equivalent, key selection criteria include low VF matching (≤20 mV), 1.5 pF junction capacitance at 0 V, 100 ps reverse recovery time, thermal resistance of ≤410 K/W (junction-to-soldering point), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This Schottky diode leverages a low-barrier metal-semiconductor junction to achieve fast switching with minimal stored charge. Its 100 ps reverse recovery time and 1.5 pF capacitance at 0 V support RF detector and high-frequency clamp applications up to 1 GHz.
The device operates across –55 °C to +125 °C and maintains ≤0.1 µA reverse leakage at 50 V, enabling stable performance in low-power sensor front-ends and ESD-protected I/O lines where leakage-sensitive bias networks are used.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 5 V–24 V logic and power rails without breakdown |
| Forward Voltage (VF) | 375 mV typ. @ 10 mA - minimizes conduction loss in low-voltage signal path protection |
| Junction Capacitance (CT) | 1.5 pF @ 0 V, 1 MHz - enables use in 800 MHz–2.4 GHz RF detection and mixer stages |
| Reverse Recovery Time (τrr) | 100 ps - ensures clean edge transition in >100 Mbps digital signal routing |
| Thermal Resistance (RthJS) | ≤410 K/W - limits junction temperature rise to <30 K above solder point under 70 mA DC |
| Leakage Current (IR) | ≤0.1 µA @ 50 V - preserves accuracy in high-impedance analog sensing nodes |
Pinout & Package
Package: SOT23 - surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC TO-236AB, suitable for automated pick-and-place and reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry node | Connected to higher-potential side in clamping or rectification paths; requires trace width ≥0.2 mm for 70 mA continuous |
| Cathode (Pin 2) | Current exit node / reference terminal | Typically tied to ground or lower-rail reference; serves as return path for ESD current in I/O protection |
| NC / Heat Sink (Pin 3) | No internal connection | Exposed pad is unconnected; not used for thermal conduction or electrical function in this variant |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling |
| Low forward voltage matching | ΔVF ≤ 20 mV across devices - enables consistent threshold behavior in parallel or matched-pair configurations |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak |
| High-speed switching | 100 ps τrr and 34 Ω dynamic forward resistance - reduces switching distortion in 10–100 MHz clock distribution networks |
Applications
| USB 2.0 Data Line Protection | RF Signal Detector |
|---|---|
Use Scenario: Clamping transient overvoltage on D+ and D− lines during hot-plug or ESD events in portable peripherals. IC Role / Device Role: Bidirectional voltage clamp placed between data line and ground, leveraging low VF and fast response. Use Value: Limits excursion to <0.7 V above VDD or below GND while maintaining <0.1 µA leakage to preserve signal integrity at 480 Mbps. | Use Scenario: Demodulating amplitude-modulated RF signals in 868 MHz ISM-band wireless sensors. IC Role / Device Role: Zero-bias envelope detector diode operating in square-law region due to low barrier height. Use Value: Achieves >–20 dBm sensitivity with 1.5 pF CT and sub-400 mV VF, enabling direct coupling without DC blocking capacitors. |
| Low-Voltage Logic Level Shifting | Li-ion Battery Fuel Gauge Input Protection |
Use Scenario: Isolating 1.8 V microcontroller GPIO from 3.3 V peripheral I²C bus while preserving rise/fall times. IC Role / Device Role: Passive level translator using forward conduction to limit high-side voltage swing. Use Value: 375 mV VF ensures output stays within 1.8 V ±50 mV window; 100 ps τrr prevents pulse skew in 1 MHz clocked protocols. | Use Scenario: Protecting precision ADC input of fuel gauge IC from battery pack voltage transients during load dump. IC Role / Device Role: Low-leakage clamp diode shunting excess voltage to battery rail before it reaches sensitive analog input. Use Value: ≤0.1 µA IR at 50 V avoids measurement offset drift; 70 V VR withstands 48 V system surges in 12 V nominal packs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | 30 V VR, 200 mA IF, 450 mV VF @ 10 mA, SOD-123 package | Lower voltage rating; higher current capacity; larger footprint | Select when higher surge current handling is required and 30 V system voltage suffices |
| Vishay VS-30BQ015-M3/86A | 15 V VR, 1.5 A IF, 450 mV VF @ 1 A, SMA package | Not AEC-Q101 qualified; designed for power rectification, not signal-level clamping | Use only in non-automotive, high-current DC/DC output rectification where low VF dominates |
Compared with NSR0230HT1G and VS-30BQ015-M3/86A, BAS7005E6433HTMA1 uniquely balances AEC-Q101 compliance, 70 V standoff, sub-400 mV VF, and SOT23 scalability-making it optimal for space-constrained, automotive-grade signal conditioning where voltage margin and leakage matter more than current rating.
Availability
BAS7005E6433HTMA1 is available at Aetrix Electronics and suitable for USB interface protection, RF detector circuits, low-voltage level shifting, and Li-ion battery monitoring systems requiring stable component supply across extended temperature ranges and automotive lifecycle demands.
Supply support for BAS7005E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's BAS70 family of high-speed Schottky diodes, engineered specifically for signal integrity preservation in automotive infotainment, body electronics, and ADAS sensor interfaces where low capacitance and tight VF matching are critical.
FAQ
Is BAS7005E6433HTMA1 qualified for automotive applications?
Yes. It is fully qualified to AEC-Q101 standards, including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling tests. Its –55 °C to +125 °C operating range and 150 °C maximum junction temperature support under-hood and infotainment module deployment.
What is the thermal resistance from junction to soldering point?
The junction-to-soldering-point thermal resistance (RthJS) is ≤410 K/W for the BAS70-04 variant, which corresponds to BAS7005E6433HTMA1. This value applies when mounted on a standard 2-layer PCB with 1 cm² copper pour per side and reflow-soldered per IPC-J-STD-020.
Can this diode be used in RF detector applications?
Yes. With 1.5 pF junction capacitance at 0 V and 100 ps reverse recovery time, it operates effectively as a zero-bias envelope detector up to 2.4 GHz. Its low VF and minimal stored charge enable accurate demodulation of AM signals in ISM-band wireless sensor nodes.
Does BAS7005E6433HTMA1 have a built-in ESD protection structure?
No. It is not an integrated ESD protection device. However, its low leakage (<0.1 µA at 50 V) and fast response make it suitable as a discrete clamping element in externally designed ESD protection networks-typically paired with TVS diodes or RC filters for full IEC 61000-4-2 compliance.
BAS7005E6433HTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BAS7005E6433HTMA1 FAQ
1.How can I place an order for BAS7005E6433HTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS7005E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS7005E6433HTMA1 reliable?
The price and inventory of BAS7005E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS7005E6433HTMA1 is usually 5 days.
3.What payment methods are accepted for BAS7005E6433HTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS7005E6433HTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS7005E6433HTMA1?
BAS7005E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS7005E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS7005E6433HTMA1?
For technical support, including BAS7005E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS7005E6433HTMA1 requirements.
6.How does Aetrix verify that BAS7005E6433HTMA1 is sourced from the original manufacturer or authorized distributors?
All BAS7005E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS7005E6433HTMA1 meets industry standards.
7.What is the process for return or replacement of BAS7005E6433HTMA1?
All BAS7005E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS7005E6433HTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS7005E6433HTMA1 part is unused and in its original packaging.
Return procedure for BAS7005E6433HTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS7005E6433HTMA1 Tags
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