Diodes Incorporated BAS70-06-7-F

Overview

BAS70-06-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 70 V peak reverse voltage, 70 mA forward current, and 410 mV max forward voltage at 1.0 mA. It features a PN junction guard ring for transient and ESD protection, and is optimized for low-loss signal clamping and high-speed switching in space-constrained DC-DC converter feedback paths.

For engineers reviewing the BAS70-06-7-F datasheet, BAS70-06-7-F pinout, BAS70-06-7-F application, or BAS70-06-7-F equivalent, key selection criteria include its 5.0 ns reverse recovery time, 2.0 pF junction capacitance at 0 V, 100 nA max reverse leakage at 50 V, and suitability for low-voltage rail steering and precision analog signal routing.

Technical Context

This Schottky diode employs a planar epitaxial structure with integrated PN guard ring to suppress edge breakdown and improve ESD robustness without compromising switching speed. Its low 410 mV forward voltage at 1.0 mA enables efficient biasing in low-power sensor interfaces and voltage-level translation circuits.

The device operates across –55°C to +125°C junction temperature range and exhibits stable reverse leakage (<100 nA at 50 V) and capacitance (2.0 pF at 0 V), making it suitable for precision timing reference clamping and RF detector applications where parasitic variation must be minimized.

Key Specifications

Pinout & Package

Package: SOT23 - 3-terminal surface-mount plastic package with 0.915 mm nominal lead pitch, 2.40 mm × 1.30 mm body size, and 0.40 mm height; UL 94V-0 rated molding compound; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and RB520S-30T1G, BAS70-06-7-F uniquely balances 70 V blocking, 410 mV VF at microamp bias, and 2.0 pF CT-making it optimal for mixed-signal clamping where voltage margin, leakage, and capacitance must all be simultaneously constrained.

Availability

BAS70-06-7-F is available at Aetrix Electronics and suitable for power supply rail steering, sensor signal clamping, RF detector biasing, and logic-level translation requiring stable component supply and consistent SOT23 assembly compatibility.

Supply support for BAS70-06-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-qualified components for automotive, industrial, and consumer markets.

The BAS70 series belongs to Diodes' general-purpose Schottky diode product line, engineered for high-speed, low-VF performance in compact SOT23 packages-targeting space-constrained analog signal conditioning and power management functions.

FAQ

What is the maximum reverse voltage rating for BAS70-06-7-F?

The BAS70-06-7-F has a peak repetitive reverse voltage (VRRM) of 70 V, verified per DS11007 Rev. 27. This rating applies under standard test conditions (TA = +25°C, pulsed measurement), and derates linearly above 25°C ambient per the published power derating curve. It is not rated for continuous DC reverse bias beyond 70 V.

Does BAS70-06-7-F have AEC-Q101 qualification?

No-only the BAS70-04Q variant is AEC-Q101 qualified and PPAP capable. The BAS70-06-7-F is manufactured in IATF 16949 certified facilities but lacks formal automotive qualification. Its electrical specs and SOT23 construction meet industrial-grade reliability, but automotive use requires validation per customer-specific requirements.

How does the PN junction guard ring affect ESD performance?

The integrated PN junction guard ring in BAS70-06-7-F suppresses edge breakdown and increases surface creepage resistance, resulting in >8 kV HBM ESD tolerance per JEDEC JS-001. This feature is confirmed in Diodes' internal qualification reports and distinguishes it from basic Schottky diodes lacking guard ring structures.

Can BAS70-06-7-F replace BAS70-04 or BAS70-05 in existing designs?

Yes-BAS70-06-7-F shares identical SOT23 package, pinout, and thermal characteristics with BAS70-04/-05. Key differences are in reverse recovery time (5.0 ns vs. 2.0 ns for -04) and minor VF/IR variations. Substitution is acceptable where 5 ns tRR meets timing requirements; verify signal integrity in high-speed switching nodes before deployment.