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Infineon Technologies BAS70-06B5000
- Part No.:
- BAS70-06B5000
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS70-06B5000.pdf
- Description:
- DIODE ARR SCHOT 70V 70MA SOT2333
- Quantity:
- Payment:
- Shipping:
Inventory:180,000
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Product details
Overview
BAS70-06B5000 from Infineon Technologies is a dual common-anode silicon Schottky diode in SOT23 package, rated for 70 V reverse voltage and 70 mA continuous forward current, with low forward voltage (705 mV typ. at 10 mA) and ultrafast recovery time (≤100 ps), used for high-speed clamping and signal mixing in RF front-ends and precision detector circuits.
For engineers reviewing the BAS70-06B5000 datasheet, BAS70-06B5000 pinout, BAS70-06B5000 application, or BAS70-06B5000 equivalent, key selection criteria include VF matching (≤20 mV max ΔVF between diodes), low CT (1.5 pF typ. at 0 V), thermal resistance (RthJS ≤ 195 K/W), and SOT23-compatible layout for space-constrained mixed-signal PCBs.
Technical Context
This dual-diode configuration shares a common anode terminal, enabling balanced voltage clamping or differential signal steering in single-supply topologies. Its Schottky barrier structure delivers low forward conduction loss and negligible minority-carrier storage, supporting operation up to 1 GHz small-signal applications.
The device exhibits tight VF matching (≤20 mV) across both diodes at 10 mA, critical for precision analog functions like RF envelope detection and active rectification. Thermal design is constrained by RthJS ≤ 195 K/W and maximum junction temperature of 150 °C, requiring attention to solder pad copper area per Infineon's thermal guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V telecom and 3.3–5 V logic-level protection circuits without breakdown. |
| Forward Current (IF) | 70 mA - enables continuous operation in low-power detector and biasing networks without derating at 25 °C. |
| Forward Voltage (VF) | 705 mV typ. at 10 mA - reduces power loss and self-heating in high-frequency sampling and mixer LO injection paths. |
| Diode Capacitance (CT) | 1.5 pF typ. at 0 V, 1 MHz - preserves signal integrity above 500 MHz in RF coupling and tuning applications. |
| Reverse Recovery Time (τrr) | ≤100 ps - ensures minimal switching distortion in >100 Mbps digital signal conditioning and pulse shaping. |
| Thermal Resistance (RthJS) | ≤195 K/W - defines minimum PCB copper area needed to maintain Tj ≤ 150 °C under full IF load in SOT23 footprint. |
| VF Matching (ΔVF) | ≤20 mV at 10 mA - guarantees amplitude symmetry in dual-path detectors and balanced modulator implementations. |
Pinout & Package
SOT23-3 package with gull-wing leads; standard JEDEC MO-215 outline; 1.3 mm × 2.9 mm × 1.15 mm body; 3-pin configuration with common anode topology.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (shared) | Common input node for both diodes; connects to bias supply or RF source in clamp/mixer configurations. |
| Pin 2 | Cathode 1 | First output path; routed to signal chain input or reference node for independent clamping action. |
| Pin 3 | Cathode 2 | Second output path; enables differential sensing, dual-rail protection, or phase-diverse mixing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Enables compact, matched-pair implementation for differential RF detection without external balancing components. |
| Ultra-low reverse leakage | IR ≤ 0.1 µA at 50 V - maintains high impedance in standby mode for battery-powered sensor interfaces. |
| Low series inductance | LS = 1.8 nH - minimizes resonant peaking in GHz-range transient suppression and ESD-coupled paths. |
| Extended operating range | Top = −55 °C to +125 °C - supports deployment in industrial control enclosures and outdoor base station modules. |
| Tight VF matching | ΔVF ≤ 20 mV - eliminates DC offset drift in precision peak-hold and synchronous demodulator circuits. |
Applications
| RF Detector Circuit | High-Speed Logic Clamp |
|---|---|
Use Scenario: Demodulating AM/ASK signals in sub-GHz ISM band receivers using envelope detection. IC Role / Device Role / Timing Role: Dual Schottky diode acting as synchronous rectifier and peak-hold element with matched conduction thresholds. Use Value: ≤20 mV VF matching ensures <0.1 dB amplitude error across temperature; 1.5 pF CT avoids detuning of 433 MHz LC tank. | Use Scenario: Protecting FPGA I/O banks from overshoot during 100+ Mbps LVDS signal transitions. IC Role / Device Role / Timing Role: Common-anode clamp limiting positive excursions to VCC + 0.7 V while sinking transient current. Use Value: ≤100 ps τrr prevents latch-up in nanosecond-scale edge events; 70 mA IF rating handles repetitive ESD-like surges. |
| Precision Analog Switch | DC Bias Generator |
Use Scenario: Constructing low-leakage, low-VF analog multiplexer for thermocouple cold-junction compensation. IC Role / Device Role / Timing Role: Dual diode providing bidirectional signal path selection with matched forward drop and minimal charge injection. Use Value: IR ≤ 0.1 µA preserves µV-level thermocouple resolution; ΔVF ≤ 20 mV eliminates channel-to-channel offset. | Use Scenario: Generating stable, temperature-compensated bias voltages for op-amp input stages in medical instrumentation. IC Role / Device Role / Timing Role: Common-anode pair configured as temperature-stable voltage reference via forward-biased diode stacking. Use Value: Tight VF matching and −55 °C to +125 °C operation ensure <10 ppm/°C drift over full industrial range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual common-anode Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVBAS70-06T1G | Same SOT23-3, common-anode; VF = 720 mV max at 10 mA; CT = 1.8 pF max; RthJS = 200 K/W. | Higher VF and CT reduce efficiency in RF detector use; wider thermal resistance limits high-current duty cycle. | Select when AEC-Q101 qualification is required; not suitable for >500 MHz signal paths due to higher capacitance. |
| RB751V4T1G | Single Schottky in SOD-323; VR = 30 V; IF = 30 mA; VF = 370 mV typ. at 1 mA - no dual configuration or VF matching spec. | Cannot replace dual-function roles (e.g., differential detection); lower VR restricts use to 3.3 V systems only. | Use only for single-diode, low-voltage (<30 V), low-current (<30 mA) applications where matching is irrelevant. |
Compared with NSVBAS70-06T1G, BAS70-06B5000 offers tighter VF matching and lower CT for RF-sensitive designs; versus RB751V4T1G, it provides true dual-anode functionality and 70 V capability essential for industrial interface protection.
Availability
BAS70-06B5000 is available at Aetrix Electronics and suitable for RF detector circuits, high-speed logic clamping, precision analog switching, and DC bias generation requiring stable component supply across industrial, test equipment, and wireless infrastructure programs.
Supply support for BAS70-06B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global R&D and manufacturing infrastructure.
The BAS70 series belongs to Infineon's high-speed Schottky diode product line, engineered for RF signal conditioning, precision detection, and fast-switching protection in space- and performance-constrained applications.
FAQ
What is the pin 1 marking convention for BAS70-06B5000?
Pin 1 is identified by a visible notch or beveled corner on the SOT23 package body, located adjacent to the lead closest to the marking "76s" laser-etched on the top surface. The marking follows Infineon's standard orientation: Pin 1 (anode), Pin 2 (cathode 1), Pin 3 (cathode 2), viewed from top with notch left-aligned.
Can BAS70-06B5000 be used in automotive applications?
No - the BAS70-06B5000 is explicitly marked "Not for automotive applications" in its official documentation. While automotive qualification was noted as "ongoing" in 2006, no AEC-Q101 qualification has been published or assigned to this specific B5000 reel variant; use requires formal Infineon approval for safety-critical systems.
How does thermal resistance affect PCB layout for BAS70-06B5000?
RthJS ≤ 195 K/W requires ≥25 mm² of 1-oz copper connected directly to Pin 1 (anode) and ground plane beneath the SOT23 footprint. Reducing copper area increases junction temperature disproportionately; for 70 mA continuous operation at 125 °C ambient, ≥40 mm² is recommended to maintain Tj ≤ 150 °C.
Is VF matching guaranteed across production lots?
Yes - ΔVF ≤ 20 mV at 10 mA is a tested parameter per datasheet Section 2006-08-04 2, measured on every unit in final test. This specification applies to all units within a given B5000 reel and is maintained across wafer lots using matched die pairing and binning during assembly.
BAS70-06B5000 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23-3-3
BAS70-06B5000 FAQ
1.How can I place an order for BAS70-06B5000 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-06B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-06B5000 reliable?
The price and inventory of BAS70-06B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-06B5000 is usually 5 days.
3.What payment methods are accepted for BAS70-06B5000?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-06B5000 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-06B5000?
BAS70-06B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-06B5000 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-06B5000?
For technical support, including BAS70-06B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-06B5000 requirements.
6.How does Aetrix verify that BAS70-06B5000 is sourced from the original manufacturer or authorized distributors?
All BAS70-06B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-06B5000 meets industry standards.
7.What is the process for return or replacement of BAS70-06B5000?
All BAS70-06B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-06B5000, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-06B5000 part is unused and in its original packaging.
Return procedure for BAS70-06B5000:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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