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Infineon Technologies BAS7006B5003
- Part No.:
- BAS7006B5003
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS7006B5003.pdf
- Description:
- DIODE ARRAY SCHOT 70V 70MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:30,000
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Product details
Overview
BAS7006B5003 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as common anode dual diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW power dissipation, with typical forward voltage of 705 mV at 10 mA - used in high-speed switching and voltage clamping circuits in industrial signal conditioning modules.
For engineers reviewing the BAS7006B5003 datasheet, BAS7006B5003 pinout, BAS7006B5003 application, or BAS7006B5003 equivalent, key selection criteria include low forward voltage matching (≤20 mV), sub-100 ps reverse recovery time, 1.5 pF capacitance at 0 V, thermal resistance ≤195 K/W, and operation across –55 °C to +125 °C ambient.
Technical Context
This dual-diode device integrates two Schottky junctions sharing a common anode terminal, enabling compact dual-path clamping or steering functions without cross-coupling. Its low series inductance (1.8 nH) and tight VF matching support precise signal-level detection in RF mixer front-ends and logic-level translation circuits.
The diode exhibits thermally robust performance: junction temperature up to 150 °C, with derated forward current down to ~40 mA at 120 °C case temperature, and reverse leakage limited to 0.1 µA at 50 V - critical for low-power sensor interface and battery-backed hold-up applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports rail-to-rail clamping in 5 V–48 V logic and analog signal paths without breakdown. |
| Forward Voltage (VF) | 705 mV typ. @ 10 mA - minimizes conduction loss in low-voltage bias networks and level-shifting circuits. |
| Reverse Leakage (IR) | 0.1 µA max. @ 50 V - ensures negligible standby current in precision reference and sampling circuits. |
| Diode Capacitance (CT) | 1.5 pF typ. @ 0 V, 1 MHz - enables >500 MHz small-signal bandwidth in RF detector and mixer applications. |
| Reverse Recovery Time (τrr) | 100 ps max. - supports clean edge transitions in >100 Mbps digital signal routing and pulse shaping. |
| Thermal Resistance (RthJS) | ≤195 K/W - allows sustained 70 mA operation at TS ≤ 101 °C without active cooling in sealed enclosures. |
| Operating Temperature | –55 °C to +125 °C - qualified for industrial control, telecom line cards, and outdoor instrumentation environments. |
Pinout & Package
Package: SOT23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with gull-wing leads. Pin 1 = Anode 1, Pin 2 = Common Anode (shared), Pin 3 = Anode 2 - confirmed per Infineon package outline EHB00044 and marking layout documentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input node for first clamping path; connects to signal source requiring bidirectional protection or steering. |
| Pin 2 | Common Anode | Shared high-side connection point - enables OR-ing, dual-input logic gating, or parallel current sharing. |
| Pin 3 | Anode of Diode 2 | Input node for second independent clamping path; supports differential signal handling or redundancy. |
Key Features
| Feature | Design Value |
|---|---|
| Low Forward Voltage Matching | ΔVF ≤ 20 mV @ 10 mA - ensures balanced current splitting and minimal offset in dual-path analog switches. |
| Ultra-Fast Switching | τrr ≤ 100 ps - eliminates tail current in high-frequency pulse circuits, reducing timing jitter in clock distribution nodes. |
| Low Junction-to-Solder Thermal Resistance | RthJS ≤ 195 K/W - improves long-term reliability under cyclic thermal stress in power-supply monitoring circuits. |
| Small-Signal RF Performance | CT = 1.5 pF @ 0 V - maintains impedance integrity in 50 Ω RF paths up to 1 GHz without parasitic resonance. |
| Extended Temperature Operation | Top = –55 °C to +125 °C - supports deployment in unheated base stations and motor-drive feedback sensors. |
Applications
| Industrial Signal Conditioning | RF Mixer Front-End |
|---|---|
Use Scenario: Protecting ADC input stages from ESD and overvoltage transients in PLC analog I/O modules. IC Role / Device Role: Dual Schottky clamp limiting input swing to ±0.7 V while preserving signal fidelity below 10 MHz. Use Value: Prevents latch-up in 16-bit SAR ADCs without adding series resistance that degrades SNR. | Use Scenario: Local oscillator (LO) and RF signal mixing in sub-GHz ISM band receivers. IC Role / Device Role: Passive double-balanced mixer core using matched diodes for LO-to-RF isolation >25 dB. Use Value: Achieves < –15 dBm third-order intercept with < 0.5 dB conversion loss due to low CT and VF consistency. |
| Digital Logic Level Translation | Power Supply OR-ing |
Use Scenario: Translating 3.3 V microcontroller GPIO signals to 5 V legacy peripherals in embedded gateways. IC Role / Device Role: Bidirectional clamping diode pair enforcing safe voltage windows between non-isolated domains. Use Value: Enables glitch-free level shifting without external pull-ups or dedicated translators, saving PCB area and BOM cost. | Use Scenario: Redundant 12 V DC power inputs in network routers with automatic source selection. IC Role / Device Role: Common-anode dual diode providing low-loss, thermally stable OR-ing with < 700 mV forward drop. Use Value: Delivers >98 % efficiency at 500 mA per rail while avoiding thermal runaway seen with MOSFET-based ideal diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB751S40T1G (ON Semiconductor) | Single diode, SOD-523, VF = 370 mV @ 1 mA - lower VF but no dual configuration. | Requires two devices for dual-path use; lacks VF matching spec. | Prefer when only one clamping path needed and ultra-low VF at microamp bias is critical. |
| BAT54C (Diodes Inc.) | SOT23 common-cathode dual, VF = 800 mV @ 10 mA, CT = 10 pF - higher capacitance and VF mismatch >50 mV. | Less suitable for RF mixing; acceptable for general-purpose logic clamping. | Select for cost-sensitive industrial controls where RF performance and tight matching are not required. |
Compared with RB751S40T1G and BAT54C, BAS7006B5003 uniquely delivers matched dual Schottky performance in a single SOT23 footprint - essential for space-constrained RF mixers and precision dual-path clamping where VF tracking and sub-pF capacitance directly impact system linearity and bandwidth.
Availability
BAS7006B5003 is available at Aetrix Electronics and suitable for industrial signal conditioning, RF front-end design, and digital level translation requiring stable component supply, consistent parametric binning, and full traceability through Infineon's production lot codes.
Supply support for BAS7006B5003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete components, with global R&D and wafer fabrication infrastructure.
The BAS70 family targets high-speed, low-loss discrete signal-path applications - designed specifically for RF, sensing, and industrial interface circuits demanding tight parameter matching and thermal resilience.
FAQ
What is the pin configuration of BAS7006B5003?
It is a common-anode dual Schottky diode in SOT23: Pin 1 = Anode 1, Pin 2 = Common Anode (shared terminal), Pin 3 = Anode 2. This configuration enables OR-ing, dual-path clamping, and balanced RF mixing without external interconnects.
Does BAS7006B5003 meet automotive qualification requirements?
No - the datasheet explicitly states "Not for automotive applications" and notes automotive qualification was "ongoing" as of the 2006 revision. It is rated for industrial temperature range (–55 °C to +125 °C) but lacks AEC-Q101 stress testing and PPAP documentation.
How does BAS7006B5003 compare to BAS70-06 in electrical performance?
BAS7006B5003 is the tape-and-reel variant (10 × 3k reels) of the BAS70-06 device. Electrically identical: same 70 V VR, 70 mA IF, 250 mW Ptot, 705 mV VF @ 10 mA, and 1.5 pF CT - only packaging and reel quantity differ per ordering code.
Can BAS7006B5003 be used in 5 V USB data line protection?
No - its 70 V reverse rating and 705 mV forward voltage are mismatched for 5 V USB ESD protection, which requires low-capacitance (≤1 pF), low-clamp-voltage (<4 V), and IEC 61000-4-2 certified TVS behavior. This Schottky diode lacks specified ESD robustness and dynamic clamping characteristics.
BAS7006B5003 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BAS7006B5003 FAQ
1.How can I place an order for BAS7006B5003 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS7006B5003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS7006B5003 reliable?
The price and inventory of BAS7006B5003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS7006B5003 is usually 5 days.
3.What payment methods are accepted for BAS7006B5003?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS7006B5003 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS7006B5003?
BAS7006B5003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS7006B5003 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS7006B5003?
For technical support, including BAS7006B5003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS7006B5003 requirements.
6.How does Aetrix verify that BAS7006B5003 is sourced from the original manufacturer or authorized distributors?
All BAS7006B5003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS7006B5003 meets industry standards.
7.What is the process for return or replacement of BAS7006B5003?
All BAS7006B5003 units undergo pre-shipment inspection (PSI). If there is an issue with BAS7006B5003, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS7006B5003 part is unused and in its original packaging.
Return procedure for BAS7006B5003:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS7006B5003 Tags
-
BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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