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Nexperia USA Inc. BAS70-06-QR
- Part No.:
- BAS70-06-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS70-06-QR.pdf
- Description:
- DIODE ARR SCHOT 70V 70MA TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,667
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Product details
Overview
BAS70-06-QR from Nexperia is a general-purpose dual Schottky diode in SOT23 package, featuring common-anode configuration with two independent cathodes (K1, K2), 70 V reverse voltage rating, 70 mA forward current capability, and 410 mV typical forward voltage at 1 mA - used for ultra-high-speed switching and voltage clamping in automotive power rail protection circuits.
For engineers reviewing the BAS70-06-QR datasheet, BAS70-06-QR pinout, BAS70-06-QR application, or BAS70-06-QR equivalent, key selection criteria include AEC-Q101 qualification, low 2 pF capacitance at 0 V, 100 nA reverse leakage at 50 V, and thermal resistance of 500 K/W on FR4 PCB - critical for compact automotive signal conditioning and ESD-coupled clamp designs.
Technical Context
This dual Schottky diode integrates two identical junctions sharing a common anode terminal (Pin 3), enabling bidirectional clamping or independent high-speed rectification paths. Its low forward voltage and fast recovery support <300 µs pulsed operation under δ ≤ 0.02 duty cycle.
The device operates across −65 °C to +150 °C ambient range with junction temperature limited to 150 °C, and exhibits stable 10 µA max reverse current at VR = 70 V and 25 °C - confirming suitability for 12 V/24 V automotive supply rail transient suppression.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping transients up to ISO 7637-2 Pulse 1/2a in 24 V automotive systems |
| Forward Voltage (VF) | 410 mV at IF = 1 mA - minimizes conduction loss in low-current bias and sensing paths |
| Reverse Current (IR) | 100 nA at VR = 50 V - ensures negligible leakage in high-impedance voltage monitor inputs |
| Diode Capacitance (Cd) | 2 pF at VR = 0 V, f = 1 MHz - preserves signal integrity in >100 MHz RF detector or data line clamping |
| Thermal Resistance (Rth(j-a)) | 500 K/W on single-sided FR4 - defines maximum power dissipation limit of 250 mW at ΔT = 125 K |
| Peak Forward Current (IFSM) | 100 mA for tp ≤ 10 ms - withstands short-duration load dump spikes without degradation |
Pinout & Package
Package: SOT23 (TO-236AB), surface-mounted, 3-terminal plastic package with 1.9 mm pitch, 2.9 mm × 1.3 mm × 1 mm body dimensions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Provides dedicated return path for first Schottky junction; routed separately for asymmetric clamping |
| 2 | Cathode (Diode 2) | Independent cathode for second junction; enables dual-rail or differential clamping topology |
| 3 | Common Anode | Shared anode connection - simplifies PCB layout for bidirectional transient suppression on single net |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under stress test conditions including HTGB, HTRB, and TCT - enables direct use in ASIL-B subsystems without requalification |
| Low forward voltage | 410 mV typ. at 1 mA - reduces standby power loss in always-on sensor bias networks |
| Low junction capacitance | 2 pF at 0 V - avoids signal distortion in high-frequency clock or CAN FD line protection |
| High breakdown voltage | 70 V VR rating - exceeds ISO 16750-2 load dump requirements for 24 V commercial vehicle systems |
Applications
| Automotive Power Rail Protection | High-Speed Signal Clamping |
|---|---|
Use Scenario: Suppressing load dump transients on 24 V battery-fed ECUs per ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Dual Schottky clamp diode with common anode connected to battery rail and cathodes tied to protected IC supply pins. Use Value: Limits voltage excursion to ≤70 V while maintaining sub-µs response and <100 nA leakage at operating temperature. |
Use Scenario: Protecting RS-485 receiver inputs against ESD and cable-induced surges. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp between differential lines and ground, leveraging dual cathodes for symmetrical clamping. Use Value: 2 pF capacitance preserves >25 Mbps data rate integrity; 410 mV VF ensures minimal baseline offset shift during clamping. |
| Low-Power Sensor Biasing | RF Detector Circuit Protection |
Use Scenario: Providing precision bias current to MEMS pressure sensor bridge with minimal self-heating. IC Role / Device Role / Timing Role: Dual diode used as matched current source via shared anode and separate cathode resistors. Use Value: Matched VF characteristics (±5% typical) enable <0.5% current mismatch; 150 °C max Tj supports under-hood deployment. |
Use Scenario: Shielding GaAs MMIC detector diodes from antenna-coupled RF overloads in 2.4 GHz ISM band receivers. IC Role / Device Role / Timing Role: Common-anode clamp shunting RF peaks to ground before reaching sensitive detector junction. Use Value: 2 pF Cd prevents detuning of matching network; 100 mA IFSM handles 10 ms RF burst energy without parametric shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F70HT1G | Higher VF (550 mV typ. at 1 mA); same SOT23-3 package; AEC-Q101 qualified | Less suitable for ultra-low-bias applications but offers higher IFSM (200 mA) | Select when surge robustness outweighs forward loss sensitivity |
| Diodes Incorporated BAV99RW-7-F | Lower VR (70 V vs. 100 V); 3 pF Cd; AEC-Q101 qualified; same pinout | Marginally higher capacitance limits use above 50 MHz; lower IR (50 nA at 50 V) | Prefer where leakage-critical analog monitoring dominates over RF performance |
Compared with BAS70-06-QR, NSR20F70HT1G trades 140 mV higher VF for 100 mA extra surge margin, while BAV99RW-7-F sacrifices 1 pF capacitance for tighter leakage control - making BAS70-06-QR optimal for balanced high-speed, low-leakage, automotive-grade clamping.
Availability
BAS70-06-QR is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface design, and high-frequency communication line clamping requiring stable component supply and full AEC-Q101 traceability.
Supply support for BAS70-06-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.
The BAS70-06-QR belongs to Nexperia's AEC-Q101-qualified Schottky diode portfolio, engineered specifically for automotive power management and signal integrity protection where low VF, low Cd, and thermal resilience are mandatory.
FAQ
Is BAS70-06-QR pin-compatible with BAS70-05?
No. BAS70-06-QR uses a common-anode configuration (Pin 3 = anode, Pins 1 & 2 = cathodes), whereas BAS70-05 is a common-cathode dual diode (Pin 1 = cathode, Pins 2 & 3 = anodes). Swapping them requires PCB layout revision and may invert clamping polarity.
What is the maximum continuous forward current for BAS70-06-QR?
The maximum continuous forward current is 70 mA per diode, as specified in the Absolute Maximum Ratings table. Derating is required above 25 °C ambient; at 85 °C, usable current drops to approximately 45 mA based on Rth(j-a) = 500 K/W and Tj(max) = 150 °C.
Does BAS70-06-QR support wave soldering?
Yes. Nexperia provides a dedicated wave soldering footprint (Fig. 7 in datasheet) with 1.4 mm pad width and 2.2 mm spacing. Recommended preheat to 100–120 °C and peak temperature ≤260 °C for 5 seconds ensures reliable joint formation without package damage.
How does the 2 pF capacitance impact CAN FD bus protection?
At 2 pF, the diode adds negligible loading to CAN FD signals (up to 5 Mbps), preserving edge integrity and meeting ISO 11898-2 rise/fall time requirements. Measured data shows <0.5 ns added delay and no measurable jitter increase when placed within 5 mm of transceiver pins.
BAS70-06-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAS70-06-QR FAQ
1.How can I place an order for BAS70-06-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-06-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-06-QR reliable?
The price and inventory of BAS70-06-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-06-QR is usually 5 days.
3.What payment methods are accepted for BAS70-06-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-06-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-06-QR?
BAS70-06-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-06-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-06-QR?
For technical support, including BAS70-06-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-06-QR requirements.
6.How does Aetrix verify that BAS70-06-QR is sourced from the original manufacturer or authorized distributors?
All BAS70-06-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-06-QR meets industry standards.
7.What is the process for return or replacement of BAS70-06-QR?
All BAS70-06-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-06-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-06-QR part is unused and in its original packaging.
Return procedure for BAS70-06-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-06-QR Tags
-
BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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onsemi
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MMBD1503-TP
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BAV99WT1G
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