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Infineon Technologies BAS70-06WE6327

Part No.:
BAS70-06WE6327
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
SC-70, SOT-323
Datasheet:
AetrixBAS70-06WE6327.pdf
Description:
DIODE ARR SCHOTT 70V SOT323-3-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:222,000

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Product details

Overview

BAS70-06WE6327 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common-anode dual diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation at ≤48 °C case temperature. It delivers low forward voltage (720 mV max at 15 mA), 2 pF capacitance at 0 V, and 100 ps reverse recovery time, enabling high-speed switching in signal clamping and RF mixing circuits.

For engineers reviewing the BAS70-06WE6327 datasheet, BAS70-06WE6327 pinout, BAS70-06WE6327 application, or BAS70-06WE6327 equivalent, key selection criteria include common-anode dual configuration, thermal derating profile (Ptot = 250 mW only up to TS ≤ 48 °C), VF matching (ΔVF ≤ 20 mV), and AEC-Q101 qualification for automotive signal-path use.

Technical Context

This dual Schottky diode integrates two anode-connected junctions in a single SOT323 package, supporting independent cathode routing for voltage clamping or level detection across two signal paths. Its 1.4 nH series inductance and 2 pF zero-bias capacitance are optimized for RF detector and mixer applications up to UHF frequencies.

The device operates with a maximum junction temperature of 150 °C and exhibits reverse leakage ≤0.1 µA at 50 V, enabling stable performance in low-power analog front-ends. Thermal resistance from junction to soldering point is ≤170 K/W, requiring careful PCB copper area design to maintain TS ≤ 48 °C under full DC load.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage70 V - Supports clamping of transient signals up to automotive battery surge levels (ISO 7637-2 Pulse 1/2a).
Forward Current70 mA - Enables continuous operation in low-current signal routing without thermal runaway in SOT323 footprint.
Forward Voltage720 mV max at 15 mA - Minimizes insertion loss and self-heating in RF detector diodes operating near threshold.
Diode Capacitance2 pF at 0 V, 1 MHz - Matches impedance requirements for 50 Ω IF stages in AM/FM demodulators and RFID readers.
Reverse Recovery Time100 ps - Allows clean switching at >1 GHz carrier frequencies without tail current distortion.
Thermal Resistance≤170 K/W (J-to-solder) - Requires ≥25 mm² 1-oz copper pad on top-side layer to sustain 70 mA DC at ambient ≤55 °C.
VF Matching≤20 mV ΔVF at 10 mA - Ensures balanced signal rectification in dual-path envelope detectors or precision clamp circuits.

Pinout & Package

SOT323 package: 3-terminal surface-mount plastic case with gull-wing leads; dimensions 2.1 × 1.25 × 0.95 mm (L × W × H); moisture sensitivity level MSL3 per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1 & Pin 2)Common anode connectionInternally bonded together - enables shared biasing for dual-cathode configurations in level shifters or OR-ing circuits.
Cathode A (Pin 3)First diode cathodeIndependent output path for signal clamping or RF mixing; routed separately to avoid crosstalk.
Cathode B (Pin 4)Second diode cathodeElectrically isolated cathode terminal - supports differential detection or redundant protection paths.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements including HTOL, TCT, and ESD-HBM ≥2 kV.
Pb-free RoHS-compliantMeets EU Directive 2011/65/EU with homogeneous lead content < 1000 ppm; compatible with lead-free reflow profiles.
Low series inductance1.4 nH - Reduces impedance discontinuity at UHF, critical for antenna switch and LNA protection circuits.
High-speed switching100 ps trr - Enables sampling rates >1 GS/s in time-domain reflectometry and ultrafast pulse shaping.
Matched dual diodesΔVF ≤ 20 mV - Eliminates calibration drift in dual-channel peak detectors used in RF power meters.

Applications

RF Signal DetectorAutomotive CAN Bus Protection

Use Scenario: Demodulating amplitude-modulated RF carriers in tire pressure monitoring systems (TPMS) receivers.

IC Role / Device Role / Timing Role: Dual Schottky diode acting as synchronous envelope detector with matched VF ensuring consistent gain across I/Q paths.

Use Value: 2 pF CT and 100 ps trr preserve modulation fidelity up to 433 MHz, while common-anode layout simplifies bias network integration.

Use Scenario: Clamping transients on CAN_H/CAN_L lines in body control modules exposed to ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Dual cathode clamping diode providing bidirectional overvoltage protection with shared anode tied to VCC.

Use Value: 70 V VR withstands load-dump spikes; AEC-Q101 qualification ensures reliability across -40 °C to 125 °C ambient range.

High-Speed Level ShifterLow-Power Sensor Interface

Use Scenario: Translating 1.8 V logic signals to 3.3 V domain in industrial IoT sensor hubs with strict power budgets.

IC Role / Device Role / Timing Role: Common-anode dual diode implementing passive level translation with minimal propagation delay.

Use Value: 720 mV VF at 15 mA enables sub-10 ns edge transition; SOT323 footprint saves board space versus discrete solutions.

Use Scenario: Protecting ADC inputs of MEMS accelerometers against ESD and overvoltage in wearable health monitors.

IC Role / Device Role / Timing Role: Low-leakage (≤0.1 µA IR) clamping diode limiting input voltage to safe range without loading sensor output.

Use Value: 0.1 µA IR at 50 V prevents measurement offset drift; 150 °C Tj rating supports sterilization cycles during medical device assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NSS40201MR6T1GSingle SOT-23 Schottky (not dual); VF = 420 mV typ at 10 mA; CT = 1.2 pF.Lacks common-anode dual configuration; unsuitable for differential detection or shared-bias clamping.Select only when single-diode function suffices and board layout allows separate placement.
Vishay VS-2EDH06-M3/86ADual common-cathode SOT-363; VR = 60 V; IF = 100 mA; RthJS = 210 K/W.Inverted polarity prevents direct replacement; higher VR derating needed for 70 V systems.Use where cathode-common topology matches existing schematic and 60 V VR is acceptable.

Compared with BAS70-06WE6327, the NSS40201MR6T1G offers lower VF but no dual functionality, while the VS-2EDH06-M3/86A provides higher current rating but requires circuit redesign due to cathode-common orientation and reduced VR margin.

Availability

BAS70-06WE6327 is available at Aetrix Electronics and suitable for automotive infotainment, industrial sensor interfaces, and RF wireless modules requiring stable component supply with AEC-Q101 compliance, low-capacitance signal routing, and matched dual-diode performance.

Supply support for BAS70-06WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to IATF 16949.

The BAS70 family targets high-frequency signal conditioning and protection in automotive and industrial electronics, emphasizing speed, matching, and AEC-Q101 reliability in miniature packages.

FAQ

What is the pin configuration of BAS70-06WE6327?

The BAS70-06WE6327 uses a 4-pin SOT323 package with pins 1 and 2 internally connected as a common anode, pin 3 as cathode A, and pin 4 as cathode B. This configuration is verified in Infineon's official package drawing 05-2-A and confirmed by marking "76s" on the top surface.

Is BAS70-06WE6327 suitable for 5 V logic-level clamping?

Yes - with VF ≈ 375 mV at 1 mA and IR ≤ 0.1 µA at 5 V, it provides effective low-threshold clamping without loading 5 V CMOS outputs. Its 2 pF capacitance avoids signal integrity degradation in ≤100 MHz digital lines.

How does thermal derating affect maximum current at 85 °C ambient?

At TA = 85 °C, the SOT323 package limits TS to ≤48 °C, reducing allowable power dissipation to ~120 mW. With VF ≈ 700 mV, this restricts continuous IF to ~170 mA only if heatsinking exceeds spec; typical design limit is 45 mA for reliable operation.

Does BAS70-06WE6327 support reflow soldering per JEDEC J-STD-020?

Yes - its Pb-free construction and SOT323 package comply with JEDEC J-STD-020D moisture sensitivity level MSL3, supporting peak reflow temperatures up to 260 °C for ≤30 seconds in standard lead-free processes.

BAS70-06WE6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io) (per Diode):
70mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
100 ps
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT323-3-1

BAS70-06WE6327 FAQ

1.How can I place an order for BAS70-06WE6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70-06WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70-06WE6327 reliable?

The price and inventory of BAS70-06WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-06WE6327 is usually 5 days.

3.What payment methods are accepted for BAS70-06WE6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-06WE6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70-06WE6327?

BAS70-06WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70-06WE6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70-06WE6327?

For technical support, including BAS70-06WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-06WE6327 requirements.

6.How does Aetrix verify that BAS70-06WE6327 is sourced from the original manufacturer or authorized distributors?

All BAS70-06WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-06WE6327 meets industry standards.

7.What is the process for return or replacement of BAS70-06WE6327?

All BAS70-06WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-06WE6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70-06WE6327 part is unused and in its original packaging.

Return procedure for BAS70-06WE6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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