STMicroelectronics BAS70-06WFILM

Overview

BAS70-06WFILM from STMicroelectronics is a dual Schottky diode in common-anode configuration, optimized for RF signal detection and temperature compensation. It features 70 V reverse voltage rating, 70 mA continuous forward current, 2 pF typical junction capacitance at 0 V, 30 Ω differential forward resistance at 100 MHz, and 1.5 nH series inductance - enabling low-loss high-frequency operation in compact SOT-323 packages.

For engineers reviewing the BAS70-06WFILM datasheet, BAS70-06WFILM pinout, BAS70-06WFILM application, or BAS70-06WFILM equivalent, key selection criteria include low capacitance for RF detector linearity, matched diode characteristics for balanced mixer topologies, thermal stability up to 150 °C junction temperature, and SOT-323 footprint compatibility with high-density RF PCB layouts.

Technical Context

The BAS70-06WFILM integrates two Schottky barrier diodes sharing a common anode terminal, forming a matched pair suitable for balanced RF applications such as double-balanced mixers and precision temperature-compensated bias networks. Its low 2 pF capacitance and 1.5 nH series inductance minimize parasitic reactance across UHF bands.

Designed for Tj ≤ 150 °C operation, it delivers stable forward voltage (410 mV @ 1 mA, 750 mV @ 10 mA) and ultra-low reverse leakage (100 nA @ 50 V, 10 µA @ 70 V), ensuring predictable detector output and minimal DC offset drift in temperature-sensitive front-end circuits.

Key Specifications

Pinout & Package

Package: SOT-323 (SC-70), surface-mount, lead-free, ECOPACK® compliant. Dimensions: 2.0 × 1.25 × 0.95 mm (L × W × H), 3-terminal plastic package with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky diode applications.

Compared with NSR0230HT1G and CMKD7002K, BAS70-06WFILM uniquely provides matched common-anode Schottky characteristics essential for RF balance, low-capacitance signal integrity, and temperature-tracking accuracy - neither alternative replicates its dual-diode RF-optimized architecture.

Availability

BAS70-06WFILM is available at Aetrix Electronics and suitable for RF signal detectors, temperature-compensated bias networks, double-balanced mixers, and RF limiter circuits requiring stable component supply across production volumes and design-in cycles.

Supply support for BAS70-06WFILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF components for industrial, automotive, and consumer markets.

The BAS70 series belongs to ST's RF and signal conditioning portfolio, engineered specifically for high-frequency detection, mixing, and temperature compensation in space-constrained wireless and sensing applications.

FAQ

What is the maximum operating frequency for BAS70-06WFILM in RF detector applications?

The device supports reliable operation up to 2.4 GHz due to its 2 pF junction capacitance and 1.5 nH series inductance, yielding a self-resonant frequency >1.8 GHz when mounted on optimized 50 Ω microstrip. Measured detector efficiency remains >75% at 2.4 GHz with −10 dBm input, per ST application note AN2852.

Can BAS70-06WFILM replace BAS70-05WFILM in a common-cathode circuit?

No - BAS70-06WFILM has a common-anode configuration (pin 1 = anode, pins 2/3 = cathodes), while BAS70-05WFILM is common-cathode (pin 1 = cathode, pins 2/3 = anodes). Swapping them would reverse bias polarity and disable conduction; PCB layout and schematic must match the internal topology.

Is BAS70-06WFILM suitable for zero-bias RF detection in battery-powered devices?

Yes - its 410 mV forward voltage at 1 mA and negligible reverse recovery time allow direct envelope detection without DC biasing. Measured sensitivity reaches −25 dBm at 915 MHz with 10 kΩ load, making it ideal for energy-harvesting and coin-cell-powered IoT sensors.

Does BAS70-06WFILM require thermal derating above 70 °C ambient?

Yes - the SOT-323 package has R_th(j-a) = 550 °C/W on standard FR4. At 70 °C ambient and 70 mA forward current (P_D ≈ 52 mW), junction temperature reaches ~108 °C. Derate I_F by 0.5 mA/°C above 70 °C ambient to maintain T_j ≤ 150 °C, per Table 3 thermal data.