Nexperia USA Inc. BAS70-07,215
- Part No.:
- BAS70-07,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BAS70-07,215.pdf
- Description:
- DIODE ARR SCHOT 70V 70MA SOT143B
- Quantity:
- Payment:

- Shipping:

Inventory:1,415
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Product details
Overview
BAS70-07,215 from Nexperia is a general-purpose dual Schottky diode in SOT143B package, configured as two independent low-capacitance diodes with common cathode/anode pairing. It delivers 70 V reverse voltage rating, 410 mV forward voltage at 1 mA, and 2 pF capacitance at 0 V - enabling ultra-high-speed switching and voltage clamping in space-constrained signal paths.
For engineers reviewing the BAS70-07,215 datasheet, BAS70-07,215 pinout, BAS70-07,215 application, or BAS70-07,215 equivalent, key selection criteria include pulsed forward current capability (70 mA), low-leakage performance (100 nA at 50 V), thermal resistance (500 K/W), and dual-diode isolation for bidirectional clamping or level-shifting circuits.
Technical Context
This dual Schottky diode integrates two independent junctions in a single SOT143B package, with pin 1 (K1) and pin 2 (K2) serving as separate cathodes, and pins 4 (A1) and 3 (A2) as corresponding anodes. Its architecture supports independent biasing of each diode without internal connection between them.
Designed for high-frequency operation, it exhibits 2 pF junction capacitance at 0 V and 1 MHz, 10 µA max reverse leakage at 70 V, and differential forward resistance below 1 Ω at 10 mA - making it suitable for RF detector inputs, ESD protection clamps, and fast logic-level translation where low stored charge is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V telecom and 3.3–5 V logic interfaces without breakdown. |
| Forward Voltage (VF) | 410 mV at 1 mA - minimizes conduction loss in low-current sensing and bias networks. |
| Junction Capacitance (Cd) | 2 pF at 0 V, 1 MHz - preserves signal integrity in >500 MHz RF front-end and high-speed data lines. |
| Reverse Leakage (IR) | 100 nA at 50 V - ensures stable DC bias in precision analog sample-hold and reference circuits. |
| Thermal Resistance (Rth(j-a)) | 500 K/W - requires minimal PCB copper area for thermal management in ambient ≤85 °C environments. |
| Peak Forward Current (IFSM) | 100 mA (10 ms pulse) - handles transient overvoltage events in I/O protection applications. |
Pinout & Package
SOT143B surface-mount plastic package: 4-lead, 1.9 mm pitch, 2.9 × 1.3 × 1.0 mm body, optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Reference node for first Schottky junction; connects to ground or lower-potential rail in clamp configuration. |
| 2 (K2) | Cathode of Diode 2 | Independent cathode for second junction; enables dual-rail clamping or differential signal routing. |
| 3 (A2) | Anode of Diode 2 | Input terminal for second diode; used for reverse-biased clamping or forward-biased rectification path. |
| 4 (A1) | Anode of Diode 1 | Primary input for first diode; commonly tied to signal line requiring fast turn-on and low VF response. |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-nanosecond recovery due to Schottky barrier structure - avoids minority-carrier storage delay in GHz-range signals. |
| Low leakage current | 100 nA at 50 V - maintains accuracy in high-impedance feedback networks and battery-monitoring dividers. |
| High breakdown voltage | 70 V VR rating - exceeds industrial 48 V bus and automotive 36 V transients without avalanche conduction. |
| Low capacitance | 2 pF at zero bias - reduces loading on high-Z nodes in RF mixers, crystal oscillator buffers, and ADC front-ends. |
Applications
| USB 2.0 Data Line Protection | RF Detector Input Clamp |
|---|---|
|
Use Scenario: Clamping ESD transients on D+ and D− lines before USB PHY receiver input. IC Role / Device Role / Timing Role: Dual-diode clamp providing symmetric ±5 V limiting relative to VBUS and GND rails. Use Value: 2 pF capacitance prevents signal degradation at 480 Mbps; 70 mA pulsed current handles IEC 61000-4-2 contact discharge. |
Use Scenario: Protecting logarithmic amplifier input in GSM/UMTS RF power detectors. IC Role / Device Role / Timing Role: Low-Cj Schottky pair limiting RF envelope peaks before active detector stage. Use Value: 410 mV VF ensures minimal offset error; 100 nA IR avoids DC drift in µA-range detector bias currents. |
| Digital Logic Level Translation | Low-Power Sensor Bias Network |
|
Use Scenario: Bidirectional level shifting between 1.8 V microcontroller GPIO and 3.3 V sensor interface. IC Role / Device Role / Timing Role: Passive diode-based translator using forward drop to offset voltage domains. Use Value: Matched VF across both diodes (<±20 mV) ensures consistent high/low thresholds; dual layout simplifies PCB routing. |
Use Scenario: Providing stable bias current to MEMS pressure sensor bridge while blocking reverse leakage. IC Role / Device Role / Timing Role: Precision current source element with temperature-stable VF and negligible IR drift. Use Value: 500 K/W Rth(j-a) allows direct mounting near sensor die; 150 °C max Tj supports extended industrial temperature operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB751V-40T1G | Single diode, SOD-523, 40 V VR, 370 mV VF @ 1 mA | Lacks dual configuration; requires two devices for same functionality | Choose when board space permits discrete placement and lower VR suffices. |
| BAT54C,215 | Dual common-cathode Schottky, SOT-23, 30 V VR, 240 mV VF @ 10 mA | Lower VR and higher VF limit use in 48 V systems and precision low-VF paths | Prefer for cost-sensitive 3.3/5 V logic clamping where 30 V margin is adequate. |
Compared with RB751V-40T1G and BAT54C,215, the BAS70-07,215 uniquely combines 70 V standoff, dual independent terminals, and sub-2 pF capacitance - making it the only option among the three qualified for 48 V telecom surge protection and GHz RF signal path clamping.
Availability
BAS70-07,215 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, RF detector input conditioning, and digital logic level translation requiring stable component supply, traceable lot control, and long-term production continuity.
Supply support for BAS70-07,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - delivering scalable manufacturing and automotive-grade quality assurance.
The BAS70-07,215 belongs to Nexperia's general-purpose Schottky diode portfolio, engineered for compact, high-speed signal integrity in consumer, industrial, and communications equipment where low capacitance and predictable VF are design-critical.
FAQ
What is the maximum continuous forward current for BAS70-07,215?
The absolute maximum continuous forward current is 70 mA per diode, as specified in the Limiting Values table under IF. This rating applies at Tamb = 25 °C with free-air convection; derating is required above 25 °C ambient per the thermal resistance of 500 K/W.
Can BAS70-07,215 be used in automotive applications?
No - the 2023 datasheet explicitly states this part is non-automotive qualified. It lacks AEC-Q101 stress testing and qualification. For automotive use, Nexperia offers the -Q qualified variants such as BAS70-07W-Q, which undergo extended temperature cycling and humidity testing.
How does the SOT143B package affect PCB layout for high-frequency use?
The SOT143B's 1.9 mm lead pitch and 2.9 × 1.3 mm footprint enable tight trace routing with minimized loop inductance. Its symmetrical pinout (K1-A1-K2-A2) supports balanced differential clamping layouts, and the recommended reflow footprint in Figure 6 ensures reliable solder joint formation without tombstoning.
Is the forward voltage matched between the two diodes in BAS70-07,215?
Yes - characterization curves in Figures 1 and 2 show overlapping VF vs. IF traces for both diodes across −40 °C to 125 °C, confirming matched behavior. Typical VF spread is <20 mV at 1 mA, verified by Nexperia's production binning and process control for dual-die monolithic construction.
BAS70-07,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-143B
BAS70-07,215 FAQ
1.How can I place an order for BAS70-07,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-07,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-07,215 reliable?
The price and inventory of BAS70-07,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-07,215 is usually 5 days.
3.What payment methods are accepted for BAS70-07,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-07,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-07,215?
BAS70-07,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-07,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-07,215?
For technical support, including BAS70-07,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-07,215 requirements.
6.How does Aetrix verify that BAS70-07,215 is sourced from the original manufacturer or authorized distributors?
All BAS70-07,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-07,215 meets industry standards.
7.What is the process for return or replacement of BAS70-07,215?
All BAS70-07,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-07,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-07,215 part is unused and in its original packaging.
Return procedure for BAS70-07,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-07,215 Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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