Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BAS7007E6433HTMA1

Part No.:
BAS7007E6433HTMA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-253-4, TO-253AA
Datasheet:
AetrixBAS7007E6433HTMA1.pdf
Description:
DIODE ARR SCHOTT 70V SOT-143-3D
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS7007E6433HTMA1 from Infineon Technologies is a silicon Schottky diode in SOD323 package, configured as a single diode with 70 V reverse voltage rating, 70 mA forward current, and 250 mW power dissipation at ≤72 °C junction temperature. It serves in high-speed switching, voltage clamping, and signal mixing circuits for automotive and industrial control systems.

For engineers reviewing the BAS7007E6433HTMA1 datasheet, BAS7007E6433HTMA1 pinout, BAS7007E6433HTMA1 application, or BAS7007E6433HTMA1 equivalent, key selection criteria include its 1.5 pF capacitance at 0 V, 34 Ω forward resistance at 10 kHz, 100 ps reverse recovery time, low VF (720 mV @ 15 mA), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This Schottky diode leverages a low-barrier metal-semiconductor junction to achieve fast switching with minimal stored charge-critical for RF detector and high-frequency clamp applications. Its 70 V VR rating supports use in 48 V automotive subsystems and 24 V industrial I/O protection.

The device exhibits tight forward voltage matching (∆VF ≤ 20 mV in multi-diode variants) and low leakage (IR ≤ 0.1 µA @ 50 V), enabling precision signal-level detection and stable biasing in analog front-ends without thermal runaway risk.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)70 V - Supports operation in 48 V automotive power domains with margin against transients.
Forward Current (IF)70 mA - Sustains continuous conduction in signal path clamping and level-shifting circuits.
Forward Voltage (VF)720 mV @ 15 mA - Minimizes power loss and self-heating in low-voltage, high-efficiency detector stages.
Diode Capacitance (CT)1.5 pF @ 0 V, 1 MHz - Enables >100 MHz RF signal integrity in mixer and detector applications.
Reverse Recovery Time (τrr)100 ps - Ensures clean edge transitions in high-speed digital logic interface protection.
Thermal Resistance (RthJS)≤310 K/W - Limits junction-to-solder-point temperature rise under pulsed load conditions.
Leakage Current (IR)≤0.1 µA @ 50 V - Preserves accuracy in high-impedance sensing and reference voltage clamping.

Pinout & Package

Package: SOD323 - Surface-mount plastic case, 1.7 mm × 1.25 mm footprint, 0.95 mm height, suitable for automated placement and reflow soldering in space-constrained PCBs.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Current entry point under forward biasConnected to lower-potential node in clamping or rectification paths; requires trace routing for minimal inductance in RF use.
Cathode (K)Current exit point under forward bias; marked side of packageTypically tied to reference rail or signal return; polarity-sensitive for correct ESD/overvoltage protection directionality.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements including HTOL, TC, and ESD HBM ≥ 2 kV.
Pb-free / RoHS compliantMeets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak.
Low forward resistance34 Ω @ 10 kHz - Reduces insertion loss in RF signal chains and improves detector sensitivity.
Fast reverse recovery100 ps - Eliminates tail current in switching nodes, preventing shoot-through in half-bridge gate drive snubbers.
Stable VF over temperatureVF drift < 0.5 mV/°C - Maintains consistent clamping threshold across -55 °C to +125 °C operating range.

Applications

Automotive Door ModuleIndustrial PLC Input Protection

Use Scenario: Clamping transient spikes on LIN bus lines during load dump events.

IC Role / Device Role / Timing Role: Signal-level voltage clamp protecting MCU GPIO pins from ±100 V surges.

Use Value: Prevents latch-up and permanent damage using 70 V VR margin and sub-100 ps response to fast edges.

Use Scenario: Protecting 24 V digital input channels from field-wiring induced EFT bursts.

IC Role / Device Role / Timing Role: Fast-turn-on shunt diode diverting surge energy before TVS activation.

Use Value: Low VF (720 mV) ensures early conduction, reducing stress on downstream optocoupler inputs.

RF Signal DetectorHigh-Speed Logic Level Shifter

Use Scenario: Demodulating AM signals in UHF remote receiver front-ends.

IC Role / Device Role / Timing Role: Zero-bias envelope detector leveraging low CT (1.5 pF) and minimal series resistance.

Use Value: Enables >500 MHz bandwidth detection without RC roll-off degradation.

Use Scenario: Translating 1.8 V logic outputs to 3.3 V interface levels in FPGA I/O banks.

IC Role / Device Role / Timing Role: Passive level translator using forward conduction drop for offset compensation.

Use Value: 100 ps τrr avoids timing skew between parallel data lanes in high-speed serial links.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBAT54LT1GHigher VF (800 mV @ 10 mA); SOT-23 package; 100 V VRLess suitable for low-voltage RF detection due to higher capacitance (2.5 pF)Prefer when higher reverse voltage margin is required and board space allows larger SOT-23 footprint.
BAT54CWCommon-cathode dual configuration; same SOD-323 footprint; 30 V VRNot interchangeable for single-diode clamping; limited to dual-path biasing or matched-pair designsSelect only if dual-diode topology is needed and 30 V VR suffices for the target system.

Compared with SBAT54LT1G and BAT54CW, BAS7007E6433HTMA1 offers superior RF performance (1.5 pF, 100 ps), tighter VF matching, and AEC-Q101 validation-making it optimal for automotive signal integrity and precision clamping where size, speed, and qualification matter.

Availability

BAS7007E6433HTMA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC input protection, RF signal detectors, and high-speed logic level shifters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAS7007E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's BAS70 family of high-speed Schottky diodes, designed specifically for automotive signal conditioning, ESD protection, and RF front-end applications demanding AEC-Q101 reliability and low parasitic performance.

FAQ

Is BAS7007E6433HTMA1 pin-compatible with BAS70-07?

Yes. BAS7007E6433HTMA1 uses the SOD323 package and shares identical anode/cathode terminal layout with BAS70-07. The marking "77s" corresponds to BAS70-07 per Infineon's package documentation, confirming mechanical and electrical interchangeability in single-diode configurations.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C. Derating begins at 72 °C case temperature, where total power dissipation must be reduced linearly to zero at 150 °C, per the Ptot vs. TS curve for BAS70/BAS70-07 in the datasheet.

Does this diode support reflow soldering with lead-free processes?

Yes. BAS7007E6433HTMA1 is qualified for lead-free reflow per JEDEC J-STD-020, with a peak temperature rating of 260 °C for up to 30 seconds, and complies with RoHS Directive 2011/65/EU without exemptions.

Can BAS7007E6433HTMA1 replace BAT54 in existing designs?

Only with verification. While both are SOD323 Schottky diodes, BAS7007E6433HTMA1 has higher VR (70 V vs. 30 V), lower CT (1.5 pF vs. ~10 pF), and AEC-Q101 qualification-making it unsuitable as a direct drop-in unless the design specifically benefits from those attributes and tolerates the different VF curve.

BAS7007E6433HTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-253-4, TO-253AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
2 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io) (per Diode):
70mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
100 ps
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Operating Temperature - Junction:
150°C (Max)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT-143-3D

BAS7007E6433HTMA1 FAQ

1.How can I place an order for BAS7007E6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS7007E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS7007E6433HTMA1 reliable?

The price and inventory of BAS7007E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS7007E6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BAS7007E6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS7007E6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS7007E6433HTMA1?

BAS7007E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS7007E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS7007E6433HTMA1?

For technical support, including BAS7007E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS7007E6433HTMA1 requirements.

6.How does Aetrix verify that BAS7007E6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BAS7007E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS7007E6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BAS7007E6433HTMA1?

All BAS7007E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS7007E6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS7007E6433HTMA1 part is unused and in its original packaging.

Return procedure for BAS7007E6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS7007E6433HTMA1 Tags

  • BAS7007E6433HTMA1
  • BAS7007E6433HTMA1 PDF
  • BAS7007E6433HTMA1 Datasheet
  • BAS7007E6433HTMA1 Specifications
  • BAS7007E6433HTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BAS7007E6433HTMA1
  • Buy BAS7007E6433HTMA1
  • BAS7007E6433HTMA1 Price
  • BAS7007E6433HTMA1 Distributor
  • BAS7007E6433HTMA1 Supplier
  • BAS7007E6433HTMA1 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER