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Nexperia USA Inc. BAS70-07S,115
- Part No.:
- BAS70-07S,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS70-07S,115.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:10,864
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Product details
Overview
BAS70-07S from Nexperia is a general-purpose dual Schottky diode in SOT363-3 (TSSOP6) package, featuring two independent low-VF Schottky junctions with 70 V reverse voltage rating, 410 mV forward voltage at 1 mA, and 2 pF capacitance at 0 V - deployed in ultra-high-speed switching and voltage clamping circuits on space-constrained PCBs.
For engineers reviewing the BAS70-07S datasheet, BAS70-07S pinout, BAS70-07S application, or BAS70-07S equivalent, key selection criteria include dual-diode isolation, n.c. terminal configuration, thermal resistance (416 K/W), leakage current (≤10 µA at 70 V), and compatibility with reflow/wave soldering footprints per SOT363-3 standard.
Technical Context
This dual Schottky diode integrates two electrically isolated anode-cathode pairs in a single 6-pin TSSOP package, with pins 2 and 5 unconnected to enable layout flexibility and reduce parasitic coupling. Each diode operates independently with identical electrical characteristics and shares no internal connection between channels.
Designed for high-frequency signal routing, it delivers fast switching via low junction capacitance (2 pF) and low differential forward resistance (<1 Ω at 10 mA), while maintaining stable performance across −40 °C to 125 °C ambient temperature per typical VF/IR curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V and 56 V rail protection without breakdown. |
| Forward Voltage (VF) | 410 mV @ 1 mA - enables low-loss signal steering in battery-powered logic interfaces. |
| Reverse Current (IR) | 10 µA @ 70 V - ensures minimal standby power loss in always-on voltage clamp nodes. |
| Diode Capacitance (Cd) | 2 pF @ 0 V, 1 MHz - preserves signal integrity up to ~1 GHz in RF detector or sampling applications. |
| Repetitive Peak Forward Current (IFRM) | 70 mA - sustains pulsed operation in burst-mode level-shifting or transient suppression. |
| Junction-to-Ambient Thermal Resistance (Rth(j-a)) | 416 K/W - defines derating slope for continuous operation on FR4 with single-sided copper. |
Pinout & Package
Package: SOT363-3 (TSSOP6), 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm lead pitch, plastic surface-mount housing with exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first Schottky path; connects to source or signal line requiring clamping. |
| 2 | Not Connected (n.c.) | Internally unconnected; must be left floating or tied to ground only if required for mechanical stability. |
| 3 | Cathode of Diode 2 (K2) | Return node for second Schottky path; routes to reference or rail for bidirectional clamping. |
| 4 | Anode of Diode 2 (A2) | Independent input for second channel; enables dual-rail or differential clamping topology. |
| 5 | Not Connected (n.c.) | Internally unconnected; no electrical function; avoid routing traces to prevent EMI coupling. |
| 6 | Cathode of Diode 1 (K1) | Return node for first channel; allows separate grounding or rail referencing from K2. |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Enabled by low stored charge and sub-nanosecond recovery time - verified via <10 ns trr in comparable BAS70-series devices. |
| Low leakage current | ≤10 µA at rated 70 V reverse bias - reduces quiescent current in always-on protection circuits. |
| Low capacitance | 2 pF at zero bias - minimizes loading on high-impedance signal paths such as RF detectors or clock lines. |
| High breakdown voltage | 70 V VR rating - exceeds industrial 48 V and telecom 56 V bus requirements with safety margin. |
Applications
| USB 2.0 Data Line Protection | LVDS Receiver Clamping |
|---|---|
|
Use Scenario: Bidirectional ESD and overvoltage protection on D+ and D− lines of USB 2.0 transceivers. IC Role / Device Role: Dual-channel voltage clamp limiting excursion beyond ±0.5 V above/below supply rails. Use Value: Leverages independent A1/K1 and A2/K2 paths to protect both data lines simultaneously without cross-talk. |
Use Scenario: Input stage clamping for LVDS receivers operating at 3.3 V with ±100 mV common-mode tolerance. IC Role / Device Role: Low-capacitance shunt clamp preventing receiver input saturation during transient events. Use Value: 2 pF capacitance avoids signal edge degradation; 410 mV VF ensures clamping threshold remains within LVDS valid range. |
| RF Detector Bias Network | Logic-Level Translation Clamp |
|
Use Scenario: DC bias stabilization in GaAs FET-based RF envelope detectors operating at 900 MHz. IC Role / Device Role: Low-leakage, low-C shunt element maintaining detector node DC point under RF modulation. Use Value: 10 µA IR at 70 V prevents drift in high-impedance bias networks; 2 pF Cd avoids resonance with matching inductors. |
Use Scenario: Level-shifting interface between 1.8 V microcontroller GPIO and 3.3 V peripheral I/O. IC Role / Device Role: Dual Schottky clamp limiting overshoot/undershoot during voltage transitions. Use Value: Independent cathodes (K1/K2) allow separate rail referencing - e.g., K1 to 1.8 V, K2 to 3.3 V - enabling bidirectional translation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F70HT1G | Same SOT-363 package; higher IF(peak) = 100 mA but VF = 450 mV @ 1 mA. | Preferred where surge current handling >70 mA is critical; less optimal for ultra-low-VF precision clamping. | Select when transient robustness outweighs forward drop sensitivity. |
| Diodes Inc. BAV99W-7-F | SOT-363 package; VF = 1.25 V @ 10 mA (higher), IR = 2.5 µA @ 70 V (lower), Cd = 2 pF. | Better leakage performance but slower switching due to higher VF and junction charge. | Choose for low-leakage analog hold circuits where speed is secondary to dark-current control. |
Compared with NSR20F70HT1G and BAV99W-7-F, the BAS70-07S uniquely balances ultra-low VF (410 mV), moderate leakage (10 µA), and minimal capacitance (2 pF) - making it optimal for high-speed digital clamping where both timing fidelity and rail margin matter.
Availability
BAS70-07S is available at Aetrix Electronics and suitable for USB 2.0 interface protection, LVDS receiver clamping, and RF detector bias networks requiring stable component supply, consistent SOT363-3 footprint compliance, and traceable lot-level documentation.
Supply support for BAS70-07S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.
The BAS70-07S belongs to Nexperia's general-purpose Schottky diode product line, engineered for cost-sensitive, space-constrained applications demanding predictable high-speed switching and stable parametric behavior across temperature.
FAQ
What is the maximum junction temperature for continuous operation?
The BAS70-07S has a maximum junction temperature (Tj) of 150 °C, validated under steady-state conditions with Rth(j-a) = 416 K/W on FR4 PCB. Derating begins above 85 °C ambient; full-rated current is only permissible below 25 °C ambient per datasheet thermal curves.
Are pins 2 and 5 internally connected or electrically isolated?
Pins 2 and 5 are explicitly marked "n.c." (not connected) in Table 2 and confirmed as unconnected in the internal die layout - they serve no electrical function and must remain unbonded and unconnected in PCB design to avoid parasitic coupling or mechanical stress.
Can BAS70-07S replace BAS70-06S in existing designs?
No - BAS70-06S uses SOT363-6 (different pinout: A1-K1-A2-K2 with no n.c. pins), whereas BAS70-07S uses SOT363-3 with pins 2 and 5 unconnected. Direct replacement would require PCB redesign due to incompatible pin mapping and terminal assignment.
Is this device qualified for automotive applications?
No - the BAS70-07S is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" in Section 14, and no AEC-Q101 stress test data or automotive-grade screening is specified; use in automotive systems requires formal qualification by the customer.
BAS70-07S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS70-07S,115 FAQ
1.How can I place an order for BAS70-07S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-07S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-07S,115 reliable?
The price and inventory of BAS70-07S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-07S,115 is usually 5 days.
3.What payment methods are accepted for BAS70-07S,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-07S,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-07S,115?
BAS70-07S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-07S,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-07S,115?
For technical support, including BAS70-07S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-07S,115 requirements.
6.How does Aetrix verify that BAS70-07S,115 is sourced from the original manufacturer or authorized distributors?
All BAS70-07S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-07S,115 meets industry standards.
7.What is the process for return or replacement of BAS70-07S,115?
All BAS70-07S,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-07S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-07S,115 part is unused and in its original packaging.
Return procedure for BAS70-07S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-07S,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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