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Nexperia USA Inc. BAS70-07V,115
- Part No.:
- BAS70-07V,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAS70-07V,115.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:1,383
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Product details
Overview
BAS70-07V from Nexperia is a general-purpose dual Schottky diode in SOT666 package, featuring two independent low-VF Schottky junctions (D1 and D2), 70 V reverse voltage rating, 70 mA forward current capability, and 2 pF typical capacitance at 0 V - deployed for ultra-high-speed clamping and signal routing in space-constrained DC-DC feedback paths and USB line protection.
For engineers reviewing the BAS70-07V datasheet, BAS70-07V pinout, BAS70-07V application, or BAS70-07V equivalent, key selection criteria include dual-anode/cathode isolation, n.c. terminal configuration, thermal resistance (416 K/W), leakage performance (<10 µA at 70 V), and compatibility with reflow-only assembly on FR4 PCBs.
Technical Context
The BAS70-07V integrates two independent Schottky diodes sharing no internal connection - Pin 1 (A1) and Pin 6 (K1) form Diode 1; Pin 4 (A2) and Pin 3 (K2) form Diode 2. Pins 2 and 5 are unconnected, enabling layout separation of high-speed signal paths without crosstalk.
Its 410 mV forward voltage at 1 mA and 1 V at 15 mA reflects low-barrier metal-semiconductor junction behavior, while 2 pF capacitance at 0 V and <100 nA reverse leakage at 50 V support clean switching in RF detector and ESD-clamp front ends operating up to 1 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 70 V - Maximum reverse blocking voltage before breakdown; enables use in 48 V industrial bus clamping. |
| IF | 70 mA - Continuous forward current per diode; supports sustained operation in low-power logic-level signal steering. |
| VF @ 1 mA | 410 mV - Low forward drop ensures minimal voltage loss in bias networks and precision clamp circuits. |
| Cd @ 0 V | 2 pF - Ultra-low junction capacitance preserves signal integrity in >500 MHz RF detector and antenna switch applications. |
| IR @ 70 V | 10 µA - Low leakage maintains accuracy in high-impedance sample-and-hold and voltage reference divider nodes. |
| Rth(j-a) | 416 K/W - Thermal resistance measured on single-sided FR4; defines power derating above 25 °C ambient. |
Pinout & Package
Package: SOT666 - ultra-small surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body, 0.5 mm lead pitch), optimized for automated reflow assembly only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first Schottky path; electrically isolated from all other pins except Pin 6. |
| 2 | Not connected (n.c.) | Unbonded terminal; must be left floating or tied to ground only if required for mechanical stability - no electrical function. |
| 3 | Cathode of Diode 2 (K2) | Return node for second Schottky path; isolated from Pin 1/6 and Pin 4; enables dual-rail clamping. |
| 4 | Anode of Diode 2 (A2) | Independent input for second diode; allows separate signal routing without shared anode coupling. |
| 5 | Not connected (n.c.) | Unbonded terminal; no internal connection; PCB pad may be omitted or used for thermal relief. |
| 6 | Cathode of Diode 1 (K1) | Return node for first diode; forms complete, isolated D1 path with Pin 1 - no shared cathode topology. |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-nanosecond recovery enabled by low Qrr and Schottky barrier - critical for >100 MHz pulse shaping. |
| Low forward voltage | 410 mV at 1 mA minimizes conduction loss in battery-powered sensor biasing and low-voltage logic level translation. |
| Dual isolated diodes | Two fully independent junctions (no shared terminals) allow simultaneous but uncoupled clamping of differential signals. |
| Ultra-low capacitance | 2 pF at 0 V enables use in 2.4 GHz ISM band front-end protection without degrading insertion loss or VSWR. |
Applications
| USB 2.0 Data Line Protection | DC-DC Converter Feedback Clamp |
|---|---|
|
Use Scenario: Clamping ESD transients on D+ and D− lines in portable USB peripherals. IC Role / Device Role: Dual Schottky clamp - A1/K1 protects D+, A2/K2 protects D−, with n.c. pins preventing coupling. Use Value: 2 pF capacitance avoids signal distortion at 480 Mbps; 410 mV VF ensures minimal baseline offset during normal operation. |
Use Scenario: Preventing op-amp saturation in isolated flyback converter feedback loops. IC Role / Device Role: Dual rail-to-rail clamp - one diode limits top-side error amp output, the other clamps bottom-side reference node. Use Value: Independent anode/cathode pairs avoid cross-conduction; 70 V VR withstands transient spikes during load dump events. |
| RF Detector Input Stage | Low-Power Logic-Level Translation |
|
Use Scenario: Demodulating AM signals in sub-GHz IoT receiver front ends. IC Role / Device Role: Dual-envelope detector - each diode rectifies separate antenna path or I/Q channel. Use Value: 2 pF Cd and <100 nA IR at 50 V preserve sensitivity below −30 dBm; SOT666 footprint saves board area. |
Use Scenario: Level-shifting 1.8 V GPIO to 3.3 V peripheral interface in wearables. IC Role / Device Role: Bidirectional passive translator - forward-biased diode drops ~0.4 V, reverse blocks higher voltage. Use Value: 410 mV VF at 1 mA enables precise 1.8 V → 3.3 V shift; dual structure supports TX/RX directionality in single package. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB751V4T1G (ON Semiconductor) | SOT-523 package (smaller); single diode; 30 V VR; 30 mA IF; 370 mV VF @ 1 mA | Limited to single-channel clamping; insufficient for dual-rail or differential protection. | Choose only when board space is more constrained than voltage/current requirements. |
| CMKD7004 TR (Central Semiconductor) | SOT-363 package; dual diode; 40 V VR; 200 mA IF; 550 mV VF @ 1 mA; 4 pF Cd | Higher capacitance and forward drop reduce RF and low-voltage precision suitability. | Select when higher current handling is prioritized over speed and leakage in industrial control I/O. |
Compared with RB751V4T1G and CMKD7004 TR, the BAS70-07V uniquely balances 70 V standoff, dual isolation, 2 pF capacitance, and 410 mV forward voltage - making it optimal for compact, high-frequency, dual-path clamping where leakage and speed are co-critical.
Availability
BAS70-07V is available at Aetrix Electronics and suitable for USB interface protection, DC-DC feedback stabilization, and RF detector front ends requiring stable component supply, consistent SOT666 packaging, and guaranteed non-automotive qualification per Nexperia's 2022 revision.
Supply support for BAS70-07V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, reliable discrete, logic, and MOSFET solutions for consumer, industrial, and communications markets.
The BAS70-07V belongs to Nexperia's general-purpose Schottky diode family, engineered specifically for space-constrained, high-speed signal conditioning and voltage clamping in non-automotive portable and IoT applications.
FAQ
Is BAS70-07V qualified for automotive applications?
No. Per Nexperia's December 2022 revision history, the BAS70-07V was explicitly changed to non-automotive qualification status. It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond −65 °C to +150 °C ambient. Automotive designs require parts such as PNE30030EP or BAS70J.
Can Pins 2 and 5 be grounded or used for thermal relief?
Pins 2 and 5 are internally not connected - no bond wire or die attachment exists. They may be left floating, grounded, or connected to copper pour for thermal enhancement, but grounding does not affect electrical performance. Do not route signals through them, as they provide zero functional connectivity.
What is the maximum pulsed forward current the BAS70-07V can handle?
The non-repetitive peak forward current (IFSM) is 100 mA for pulses ≤10 ms at Tj(init) = 25 °C. This rating applies only to short-duration transients - continuous operation remains limited to 70 mA per diode, and thermal derating must be applied above 25 °C ambient using Rth(j-a) = 416 K/W.
Does BAS70-07V support wave soldering?
No. Nexperia explicitly states that reflow soldering is the only recommended method. Wave soldering risks thermal damage due to the SOT666 package's small mass and plastic body. The thermal characteristics table specifies conditions based on reflow profiles only, and no wave-soldering reliability data is provided in the datasheet.
BAS70-07V,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Diode Configuration:
- 2 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BAS70-07V,115 FAQ
1.How can I place an order for BAS70-07V,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-07V,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-07V,115 reliable?
The price and inventory of BAS70-07V,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-07V,115 is usually 5 days.
3.What payment methods are accepted for BAS70-07V,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-07V,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-07V,115?
BAS70-07V,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-07V,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-07V,115?
For technical support, including BAS70-07V,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-07V,115 requirements.
6.How does Aetrix verify that BAS70-07V,115 is sourced from the original manufacturer or authorized distributors?
All BAS70-07V,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-07V,115 meets industry standards.
7.What is the process for return or replacement of BAS70-07V,115?
All BAS70-07V,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-07V,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-07V,115 part is unused and in its original packaging.
Return procedure for BAS70-07V,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70-07V,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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