Diodes Incorporated BAS70-7

Overview

BAS70-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 70 V peak reverse voltage, 70 mA forward current, and 410 mV max forward voltage at 1.0 mA. It features fast 5.0 ns reverse recovery time and 2.0 pF junction capacitance at 0 V, with PN junction guard ring for ESD/transient protection. Used in low-power signal clamping and high-frequency detector circuits.

For engineers reviewing the BAS70-7 datasheet, BAS70-7 pinout, BAS70-7 application, or BAS70-7 equivalent, key selection criteria include low VF for efficiency-sensitive bias networks, fast tRR for RF envelope detection, tight IR control for leakage-critical sample-and-hold paths, and SOT23 footprint compatibility in space-constrained PCB layouts.

Technical Context

This Schottky diode employs a planar epitaxial structure with integrated PN guard ring to suppress edge breakdown and improve transient robustness without compromising switching speed. Its low barrier height enables sub-410 mV forward drop at 1 mA while maintaining 70 V VRWM rating - a trade-off optimized for signal-level rather than power rectification.

The device operates across –55°C to +125°C junction temperature range and exhibits stable 100 nA max reverse leakage at 50 V, making it suitable for precision analog front-ends where thermal drift of IR must remain predictable. Capacitance remains below 2.0 pF up to 10 V reverse bias, supporting >1 GHz small-signal operation.

Key Specifications

Pinout & Package

Package: SOT23 - 3-terminal plastic surface-mount package with 0.915 mm lead pitch, 2.40 mm × 1.30 mm body, and 0.40 mm height; RoHS-compliant matte tin-plated alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and 1N5711, BAS70-7 uniquely balances 70 V blocking, ultra-low 410 mV VF at 1 mA, and SOT23 footprint - making it optimal for modern high-density RF and precision analog PCBs where leakage, speed, and size are co-constrained.

Availability

BAS70-7 is available at Aetrix Electronics and suitable for RF detector circuits, low-power bias clamps, sample-and-hold leakage control, and low-current reference dividers requiring stable component supply across industrial and consumer production cycles.

Supply support for BAS70-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS70 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for signal integrity-critical roles in RF, sensing, and portable electronics where low VF, fast tRR, and ESD-hardened construction are mandatory.

FAQ

What is the maximum reverse voltage rating for BAS70-7?

The BAS70-7 has a peak repetitive reverse voltage (VRRM) and working peak reverse voltage (VRWM) of 70 V. This rating is validated per JEDEC test conditions and applies at TA = +25°C; derating is required above 25°C ambient per the published power derating curve (625°C/W RθJA).

Does BAS70-7 have automotive qualification?

No - BAS70-7 is not AEC-Q101 qualified. Only the BAS70-04Q variant carries AEC-Q101 certification, PPAP capability, and IATF 16949 manufacturing compliance. BAS70-7 is intended for industrial and commercial applications.

How is the SOT23 pinout oriented for BAS70-7?

Viewing the top marking side with the cathode band (or "K" mark) on the left, Pin 1 (Anode) is bottom-left, Pin 2 (Cathode) is bottom-right, and Pin 3 is the isolated die attach pad at the top center. Polarity is confirmed in Diodes' DS11007 Rev. 27 Figure 1 (Top View diagram).

Can BAS70-7 replace BAS70-04 in existing designs?

Yes, with functional verification - both share identical SOT23 package, 70 V VRWM, and 410 mV VF @ 1 mA. However, BAS70-04 specifies 2.0 ns tRR (vs. 5.0 ns for BAS70-7), so timing-critical RF detectors may require revalidation. No layout change is needed.