Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BAS70B5000

Part No.:
BAS70B5000
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS70B5000.pdf
Description:
DIODE SCHOTTKY 70V 70MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:90,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS70B5000 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a single diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW power dissipation, with typical forward voltage of 600 mV at 10 mA - used for high-speed switching and voltage clamping in signal conditioning circuits.

For engineers reviewing the BAS70B5000 datasheet, BAS70B5000 pinout, BAS70B5000 application, or BAS70B5000 equivalent, key selection criteria include low forward voltage (≤720 mV max at 15 mA), ultra-low reverse leakage (≤0.1 µA at 50 V), sub-100 ps reverse recovery time, and thermal resistance ≤165 K/W for reliable operation up to 125°C ambient.

Technical Context

This Schottky diode leverages a planar silicon process to achieve low barrier height and minimal minority carrier storage, enabling fast switching (τrr ≤100 ps) and low forward conduction loss. Its SOT23 package provides standardized surface-mount compatibility with verified thermal performance up to TS = 109°C.

The device exhibits stable capacitance (CT = 1.5–2 pF at 0 V, 1 MHz) and low series resistance (rf = 34 Ω typ. at 10 mA, 10 kHz), making it suitable for RF detection, clamping, and high-frequency rectification where parasitic effects must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)70 V - supports clamping and protection in 48 V and lower DC systems without breakdown
Forward Current (IF)70 mA continuous - sufficient for signal-level rectification and logic-level clamping
Forward Voltage (VF)600 mV typ. @ 10 mA - reduces conduction loss and self-heating in low-power analog paths
Reverse Leakage (IR)≤0.1 µA @ 50 V - ensures minimal signal distortion in high-impedance detector/mixer nodes
Reverse Recovery Time (τrr)≤100 ps - enables operation beyond 1 GHz in RF envelope detection and sampling applications
Thermal Resistance (RthJS)≤165 K/W - allows sustained 70 mA operation at board temperatures up to 109°C case temperature
Junction Temperature (Tj)150 °C - defines absolute maximum operating limit under transient overload conditions

Pinout & Package

SOT23-3 package with standard pin assignment: Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Not connected (NC) - thermally optimized for PCB copper pour attachment and consistent reflow profile compatibility.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; requires low-inductance trace routing for high-frequency switching integrity
Pin 2CathodeCurrent return path and thermal sink connection; tied to ground plane for optimal RthJS
Pin 3NC (No Connect)Internally unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling

Key Features

FeatureDesign Value
Ultra-fast switchingτrr ≤100 ps enables use in >1 GHz RF detector and sampling circuits without timing skew
Low forward voltage matchingΔVF ≤20 mV across multi-diode variants ensures balanced performance in dual-clamp configurations
Enhanced thermal resistanceRthJS ≤165 K/W supports higher ambient operation than standard Schottkys in same footprint
Stable capacitance vs. voltageCT varies only 1.5–2 pF from 0–50 V, critical for predictable RF impedance in mixer bias networks

Applications

RF Signal DetectionLogic-Level Clamping

Use Scenario: Demodulating AM signals in 868 MHz ISM-band receivers using envelope detection.

IC Role / Device Role / Timing Role: Schottky diode acting as zero-bias RF detector with minimal junction capacitance and series resistance.

Use Value: 1.5 pF CT and 34 Ω rf preserve signal fidelity and sensitivity down to -30 dBm input levels.

Use Scenario: Protecting microcontroller GPIO pins from overvoltage transients during hot-plug USB enumeration.

IC Role / Device Role / Timing Role: Clamp diode shunting excess voltage to VCC or GND before ESD reaches sensitive I/O structures.

Use Value: 0.1 µA IR at 50 V ensures no measurable leakage into 5 V logic rails during normal operation.

High-Speed SwitchingDC-DC Feedback Sensing

Use Scenario: Isolating feedback signals between isolated DC-DC converter stages while maintaining signal integrity.

IC Role / Device Role / Timing Role: Fast-switching diode blocking reverse current in optocoupler-coupled error amplifier paths.

Use Value: 100 ps τrr prevents false triggering during 500 kHz–1 MHz switching transitions.

Use Scenario: Level-shifting and filtering output voltage sense signals in buck regulator feedback loops.

IC Role / Device Role / Timing Role: Low-VF diode providing precision offset compensation and noise rejection in analog feedback paths.

Use Value: 600 mV VF typ. introduces known, stable offset that can be calibrated out in closed-loop control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GLower VR (30 V), higher IF (200 mA), slightly higher VF (450 mV typ. @ 10 mA)Not suitable for 48 V clamping; better for 3.3/5 V rail protection with higher surge toleranceSelect when surge robustness > voltage rating, and board space allows larger thermal pad
BAT54CSame SOT23 package, dual common-cathode configuration, VR = 30 V, VF = 380 mV @ 10 mARequires redesign for single-diode use; advantageous where dual-channel clamping is neededChoose for cost-sensitive dual-clamp designs where 30 V rating is sufficient

Compared with NSR0230HT1G and BAT54C, BAS70B5000 uniquely balances 70 V standoff, ultra-low leakage, and sub-100 ps speed in a single-diode SOT23 - making it optimal for RF and precision clamping where voltage margin and timing integrity are jointly constrained.

Availability

BAS70B5000 is available at Aetrix Electronics and suitable for RF detection, logic-level clamping, high-speed switching, and DC-DC feedback sensing requiring stable component supply across industrial, communications, and consumer electronics programs.

Supply support for BAS70B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete components with global manufacturing and quality certification.

The BAS70 series belongs to Infineon's general-purpose Schottky diode product line, designed specifically for high-frequency signal conditioning, clamping, and low-loss switching in compact, thermally efficient packages.

FAQ

Is BAS70B5000 qualified for automotive applications?

No - the datasheet explicitly states "Not for automotive applications" and notes that automotive qualification was ongoing as of the 2006 revision. It lacks AEC-Q101 stress test documentation and is intended for industrial, communications, and consumer equipment only.

What is the meaning of 'B5000' in the part number?

'B5000' denotes the packaging variant: 10,000-piece reel on 180 mm diameter carrier. This distinguishes it from B5003 (3,000-piece reel), and confirms tape-and-reel delivery format compatible with standard SMT pick-and-place feeders.

Can BAS70B5000 replace BAS70-04 or BAS70-05 in circuit design?

Yes, electrically - all share identical electrical specs and SOT23 footprint. However, BAS70B5000 is the single-diode version (like BAS70), whereas BAS70-04/-05 are dual configurations; physical replacement requires verifying pinout alignment and functional equivalence in the target circuit.

Does BAS70B5000 have a built-in ESD protection structure?

No - it is a passive Schottky diode without integrated ESD clamp structures. Its 0.1 µA reverse leakage and 70 V VR provide inherent robustness against moderate transients, but external TVS devices are required for IEC 61000-4-2 compliance.

BAS70B5000 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Capacitance @ Vr, F:
1.5pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23-3-3
Operating Temperature - Junction:
150°C

BAS70B5000 FAQ

1.How can I place an order for BAS70B5000 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70B5000 reliable?

The price and inventory of BAS70B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70B5000 is usually 5 days.

3.What payment methods are accepted for BAS70B5000?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70B5000 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70B5000?

BAS70B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70B5000 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70B5000?

For technical support, including BAS70B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70B5000 requirements.

6.How does Aetrix verify that BAS70B5000 is sourced from the original manufacturer or authorized distributors?

All BAS70B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70B5000 meets industry standards.

7.What is the process for return or replacement of BAS70B5000?

All BAS70B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70B5000, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70B5000 part is unused and in its original packaging.

Return procedure for BAS70B5000:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS70B5000 Tags

  • BAS70B5000
  • BAS70B5000 PDF
  • BAS70B5000 Datasheet
  • BAS70B5000 Specifications
  • BAS70B5000 Images
  • Infineon Technologies
  • Infineon Technologies BAS70B5000
  • Buy BAS70B5000
  • BAS70B5000 Price
  • BAS70B5000 Distributor
  • BAS70B5000 Supplier
  • BAS70B5000 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER