Infineon Technologies BAS70B5003

Overview

BAS70B5003 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a single discrete diode, rated for 70 V reverse voltage, 70 mA forward current, and 250 mW power dissipation, with typical forward voltage of 600 mV at 10 mA-used in high-speed switching and voltage clamping circuits in consumer power management and signal conditioning stages.

For engineers reviewing the BAS70B5003 datasheet, BAS70B5003 pinout, BAS70B5003 application, or BAS70B5003 equivalent, key selection criteria include its low 1.5 pF capacitance at 0 V, 100 ps reverse recovery time, sub-1 µA leakage at 50 V, thermal resistance of ≤195 K/W (BAS70-04/-06 variant), and SOT23 footprint compatibility for space-constrained PCB layouts.

Technical Context

This Schottky diode leverages a low-barrier metal-semiconductor junction to achieve fast switching (τ_rr ≤ 100 ps) and minimal forward conduction loss (V_F = 600 mV typ. @ 10 mA). Its 1.5 pF junction capacitance at 0 V and 1 MHz enables RF detection and high-frequency clamping without significant signal distortion.

The device operates across –55 °C to +125 °C and sustains 150 °C junction temperature, supported by low thermal resistance (≤195 K/W for BAS70-04/-06 variants). It is not AEC-Q200 qualified and explicitly excluded from automotive use per manufacturer statement.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package (3-pin, standard JEDEC MO-215), 1.3 mm × 2.9 mm footprint, 1.15 mm height, with gull-wing leads. Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Not connected (NC) - confirmed per Infineon SOT23 outline drawing EHS BCW66 and marking layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSVRB70MUT5G and 1N5711, BAS70B5003 offers optimal balance of RF performance (1.5 pF, 100 ps), SMT scalability, and cost for non-automotive industrial and consumer signal-path applications-without over-specifying for AEC-Q200 or under-specifying for high-frequency use.

Availability

BAS70B5003 is available at Aetrix Electronics and suitable for high-speed logic clamping, RF detection, voltage reference stabilization, and signal mixing requiring stable component supply and SOT23 footprint consistency.

Supply support for BAS70B5003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The BAS70 series belongs to Infineon's general-purpose Schottky diode product line, designed specifically for high-speed signal integrity applications-including clamping, detection, and mixing-where low capacitance and nanosecond-scale switching are critical.

FAQ

Is BAS70B5003 qualified for automotive applications?

No. Infineon explicitly states "Not for automotive applications" in the 2006 datasheet, and the part lacks AEC-Q200 qualification. While thermal and electrical specs meet some automotive ambient conditions, it has no automotive reliability testing, traceability, or PPAP documentation-use only in industrial, consumer, or communications equipment.

What is the function of Pin 3 on BAS70B5003?

Pin 3 is a no-connect (NC) terminal-internally unconnected and electrically isolated. It must remain unconnected on the PCB; soldering or routing to ground or any net will compromise thermal performance and may cause mechanical stress on the die bond wire.

How does BAS70B5003 differ from BAS70-04 or BAS70-06?

BAS70B5003 is the tape-and-reel packaging variant (10 × 3k reels) of the BAS70-04 configuration-a single-diode SOT23 device with common-cathode topology. The "B5003" suffix denotes packaging only; electrical and thermal specs match BAS70-04, including R_thJS ≤ 195 K/W and identical V_F/C_T/τ_rr characteristics.

Can BAS70B5003 replace BAT54 in existing designs?

Yes, with verification. Both are SOT23 Schottky diodes, but BAS70B5003 has lower C_T (1.5 pF vs. 10 pF for BAT54) and faster τ_rr (100 ps vs. 5 ns), making it superior for RF and high-speed logic. However, V_F is slightly higher (600 mV vs. 320 mV @ 10 mA), so check forward-drop sensitivity in low-voltage bias networks.