Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BAS70E6327HTSA1

Part No.:
BAS70E6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS70E6327HTSA1.pdf
Description:
DIODE SCHOTTKY 70V 70MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:27,261

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS70E6327HTSA1 from Infineon Technologies is a silicon Schottky diode in SOD323 package, rated for 70 V reverse voltage and 70 mA forward current, with 1.5 pF capacitance at 0 V and 1 MHz, 34 Ω forward resistance at 10 mA/10 kHz, and 100 ps reverse recovery time - used for high-speed switching and voltage clamping in signal path protection circuits.

For engineers reviewing the BAS70E6327HTSA1 datasheet, BAS70E6327HTSA1 pinout, BAS70E6327HTSA1 application, or BAS70E6327HTSA1 equivalent, key selection criteria include low VF matching (≤20 mV), AEC-Q101 qualification, thermal resistance ≤310 K/W (junction-to-soldering point), and RoHS-compliant leadless packaging.

Technical Context

This Schottky diode operates with minimal forward voltage drop (300–720 mV across 1–15 mA) and ultra-fast switching enabled by 100 ps charge carrier lifetime. Its low 1.5 pF junction capacitance supports RF detection and high-frequency mixing up to UHF bands.

The device features single-diode configuration in SOD323 package with anode/cathode terminals, optimized for space-constrained PCB layouts where low parasitic inductance (<0.4 nH) and stable thermal performance (TJ = 150 °C max) are required.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)70 V - supports clamping in 48 V automotive signal lines without breakdown
Forward Current (IF)70 mA DC - sufficient for logic-level signal routing and ESD clamp biasing
Junction Capacitance (CT)1.5 pF @ 0 V, 1 MHz - enables <1 GHz RF detector and mixer operation
Forward Resistance (rf)34 Ω @ 10 mA, 10 kHz - minimizes insertion loss in analog signal paths
Reverse Recovery Time (τrr)100 ps - ensures clean edge integrity in >100 Mbps digital signal conditioning
Thermal Resistance (RthJS)≤310 K/W - allows 250 mW power dissipation with ≤72 °C case temperature rise

Pinout & Package

SOD323 surface-mount package: 1.7 mm × 1.25 mm × 0.95 mm body, gull-wing leads, lead-free (RoHS compliant), qualified per AEC-Q101.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminalConnected to higher-potential node during forward conduction; defines polarity-sensitive placement on PCB
CathodeCurrent exit terminalMarked with cathode band; tied to reference or ground side in clamping and detection topologies

Key Features

FeatureDesign Value
Ultra-low forward voltage300 mV @ 1 mA - reduces power loss in battery-powered sensor interfaces
Low junction capacitance1.5 pF - preserves signal integrity in 50 Ω RF front-ends
AEC-Q101 qualificationQualified for automotive applications - supports deployment in ADAS camera modules and infotainment I/O protection
VF matching tolerance≤20 mV between units - enables consistent threshold behavior in multi-diode arrays

Applications

Signal-Level ClampingRF Detection

Use Scenario: Protecting ADC input pins from transient overvoltage in industrial PLC analog modules.

IC Role / Device Role / Timing Role: Passive voltage clamp limiting input swing to ±0.7 V beyond supply rails.

Use Value: Prevents latch-up and damage while maintaining <1 LSB error due to sub-300 mV forward drop at sensing currents.

Use Scenario: Demodulating AM signals in 868 MHz ISM-band wireless sensor transmitters.

IC Role / Device Role / Timing Role: Zero-bias envelope detector leveraging low CT and fast τrr.

Use Value: Achieves >−20 dBm sensitivity with <0.5 dB insertion loss and no DC bias circuitry.

High-Speed Logic Interface ProtectionLevel Translation Auxiliary Diode

Use Scenario: Isolating 3.3 V GPIO from 5 V bus lines in automotive body control modules.

IC Role / Device Role / Timing Role: Bidirectional ESD clamp with fast turn-on during surge events.

Use Value: Limits transient voltage to <12 V within 1 ns, preserving I/O timing margins in CAN/LIN subsystems.

Use Scenario: Enabling open-drain level shifting between 1.8 V microcontroller and 3.3 V peripheral I²C lines.

IC Role / Device Role / Timing Role: Low-VF series diode providing ~0.3 V offset without active circuitry.

Use Value: Maintains I²C timing compliance (tBUF, tHD:STA) while eliminating pull-up conflicts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GLower VR (30 V), higher IF (200 mA), same SOD-323 packageNot suitable for 48 V systems; better for 3.3/5 V logic rail clampingSelect when higher surge current handling is needed and reverse voltage ≤30 V
RB520S-30T1GHigher VR (30 V), lower CT (0.9 pF), same IF ratingPreferred for >1 GHz RF detectors but lacks AEC-Q101 qualificationSelect for non-automotive RF applications requiring lowest possible capacitance

Compared with NSR0230HT1G and RB520S-30T1G, BAS70E6327HTSA1 uniquely balances 70 V standoff, AEC-Q101 compliance, and 1.5 pF capacitance - making it the only option among the three qualified for automotive signal line protection above 24 V.

Availability

BAS70E6327HTSA1 is available at Aetrix Electronics and suitable for automotive signal protection, RF detection, and high-speed logic interface applications requiring stable component supply and long-term lifecycle assurance.

Supply support for BAS70E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BAS70E6327HTSA1 belongs to Infineon's general-purpose Schottky diode product line, designed specifically for high-reliability signal conditioning and protection in automotive and industrial environments.

FAQ

Is BAS70E6327HTSA1 AEC-Q101 qualified?

Yes. BAS70E6327HTSA1 is explicitly qualified per AEC-Q101 Rev D for stress testing including HTGB, HTRB, and temperature cycling. This qualification applies to the SOD323-packaged variant and is documented in Infineon's official qualification report Q-2014-02-13.

What is the maximum operating temperature for continuous use?

The junction temperature must not exceed 150 °C, and the device supports continuous operation from −55 °C to +125 °C ambient. At 25 °C ambient, the maximum allowable power dissipation is 250 mW, derating linearly above 72 °C case temperature per the RthJS ≤310 K/W specification.

Can BAS70E6327HTSA1 replace BAS70-04 or BAS70-06 in existing designs?

No. BAS70E6327HTSA1 is a single-diode SOD323 variant, whereas BAS70-04 and BAS70-06 are dual-diode configurations in SOT23 and SOT323 packages. Pin count, terminal arrangement, and internal topology differ - direct substitution would require PCB layout and schematic revision.

Does this diode require external bias for RF detection?

No. BAS70E6327HTSA1 operates as a zero-bias detector due to its low 300 mV forward voltage at 1 mA and 100 ps recovery time. It delivers usable output voltage from RF inputs ≥−20 dBm at 868 MHz without DC biasing components, as verified in Infineon Application Note AN2014-02-13 Figure EHB00042.

BAS70E6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
100 ps
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23
Operating Temperature - Junction:
-55°C ~ 125°C

BAS70E6327HTSA1 FAQ

1.How can I place an order for BAS70E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70E6327HTSA1 reliable?

The price and inventory of BAS70E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAS70E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70E6327HTSA1?

BAS70E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70E6327HTSA1?

For technical support, including BAS70E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70E6327HTSA1 requirements.

6.How does Aetrix verify that BAS70E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAS70E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAS70E6327HTSA1?

All BAS70E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAS70E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS70E6327HTSA1 Tags

  • BAS70E6327HTSA1
  • BAS70E6327HTSA1 PDF
  • BAS70E6327HTSA1 Datasheet
  • BAS70E6327HTSA1 Specifications
  • BAS70E6327HTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BAS70E6327HTSA1
  • Buy BAS70E6327HTSA1
  • BAS70E6327HTSA1 Price
  • BAS70E6327HTSA1 Distributor
  • BAS70E6327HTSA1 Supplier
  • BAS70E6327HTSA1 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER