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STMicroelectronics BAS70JFILM

Part No.:
BAS70JFILM
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
SC-76, SOD-323
Datasheet:
AetrixBAS70JFILM.pdf
Description:
DIODE SCHOTTKY 70V 70MA SOD323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,345

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Product details

Overview

BAS70JFILM from STMicroelectronics is a 70 V, 70 mA low-capacitance Schottky diode in SOD-323 package, optimized for RF signal detection and temperature compensation with 2 pF capacitance, 30 Ω differential forward resistance at 100 MHz, and 1.5 nH series inductance.

For engineers reviewing the BAS70JFILM datasheet, BAS70JFILM pinout, BAS70JFILM application, or BAS70JFILM equivalent, this device is selected for high-frequency detector circuits, ESD-sensitive RF front-ends, and precision bias networks where low parasitic C/L/R and fast recovery are critical.

Technical Context

The BAS70JFILM implements a planar Schottky barrier structure enabling negligible reverse recovery time and sub-100 ns forward recovery-key for RF envelope detection and mixer local oscillator coupling. Its 2 pF junction capacitance at 0 V and 1.5 nH series inductance minimize signal distortion up to 1 GHz.

Thermal design is supported by a 550 °C/W junction-to-ambient thermal resistance on epoxy PCBs with recommended SOD-323 pad layout, and operation is rated from –65 °C to +150 °C junction temperature, making it suitable for compact RF modules under thermal stress.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 70 V - Maximum repetitive reverse voltage before breakdown; sets safe operating margin in 48 V RF bias rails.
IF (continuous) 70 mA - Continuous forward current rating; supports detector diode operation without thermal runaway in low-power RF stages.
C (max) 2 pF at VR = 0 V, f = 1 MHz - Low junction capacitance preserves impedance matching and bandwidth in 50 Ω RF paths.
VF @ 10 mA 750 mV at Tj = 25 °C - Low forward drop enables efficient signal rectification with minimal DC offset error in precision detectors.
RF @ 100 MHz 30 Ω - Differential forward resistance at RF frequency; determines insertion loss and mismatch in high-frequency switching applications.
LS 1.5 nH - Series inductance limits self-resonant frequency; ensures stable performance below 1.3 GHz (fSR ≈ 1/(2π√(LC))).
IR @ 70 V 10 µA at Tj = 25 °C - Low leakage maintains accuracy in high-impedance bias networks and temperature-compensated reference circuits.

Pinout & Package

SOD-323 surface-mount package: 1.17 mm × 1.52 mm footprint, 0.25–0.44 mm lead width, 0.1–0.46 mm lead length, 2.3–2.7 mm height; RoHS-compliant, ECOPACK® grade, tape-and-reel packaging (3000 pcs/reel).

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry point Connected to RF input or bias source; low series resistance minimizes voltage drop during conduction.
Cathode Forward current exit / reverse blocking terminal Grounded or tied to reference node; low capacitance prevents RF shunting and preserves Q-factor in tuned circuits.

Key Features

Feature Design Value
Low conduction losses VF = 410 mV @ 1 mA enables >90% RF detection efficiency in low-signal-level applications.
Negligible switching losses No minority-carrier storage → zero reverse recovery charge (Qrr ≈ 0), eliminating switching noise in RF sampling circuits.
Low capacitance & inductance 2 pF + 1.5 nH yields self-resonant frequency >1.3 GHz, supporting operation across UHF and low-band microwave bands.
High-temperature operation Rated to 150 °C junction temperature - sustains reliability in thermally constrained RF power amplifier bias networks.
ECOPACK® RoHS compliance Lead-free SOD-323 package meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.

Applications

RF Signal Detector Temperature Compensation Network

Use Scenario: Detecting AM-modulated RF carrier in wireless sensor receiver front-end.

IC Role / Device Role / Timing Role: Passive envelope detector diode converting RF amplitude to baseband DC voltage.

Use Value: 2 pF capacitance and 1.5 nH inductance preserve detector bandwidth up to 900 MHz without external tuning.

Use Scenario: Compensating oscillator drift in VCO-based transceivers over –40 °C to +85 °C ambient.

IC Role / Device Role / Timing Role: Forward-biased Schottky diode providing negative TC voltage reference for varactor bias.

Use Value: Stable 750 mV VF @ 10 mA with <±0.5 mV/°C drift enables ±10 ppm frequency stability in 2.4 GHz ISM band.

ESD-Sensitive RF Switch Low-Power Bias Clamp

Use Scenario: Protecting LNA input pins from IEC 61000-4-2 ±8 kV contact discharge in Bluetooth/Wi-Fi modules.

IC Role / Device Role / Timing Role: Fast-turn-on clamping diode shunting transient energy to ground before LNA damage.

Use Value: Sub-100 ns response and 10 µA IR @ 70 V ensure clamping without degrading small-signal noise figure or gain flatness.

Use Scenario: Clamping gate voltage of GaN HEMT driver stage to prevent overdrive in Class-E RF amplifiers.

IC Role / Device Role / Timing Role: Low-VF forward clamp limiting peak gate voltage to ≤0.75 V above reference rail.

Use Value: 410 mV VF @ 1 mA provides precise, low-loss clamping threshold with no thermal hysteresis or recovery lag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky detector diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
NSVRB70MUT5G Same 70 V VRRM, but 1.2 pF capacitance and 25 Ω RF at 100 MHz; SOD-323 package, automotive-grade AEC-Q101 qualified. Preferred in automotive infotainment RF receivers requiring extended temperature validation (–40 °C to +125 °C). Select when AEC-Q101 qualification and lower C are prioritized over cost; same PCB footprint.
SKY13370-374LF Integrated SPDT switch with integrated Schottky detector; 3.5 pF off-capacitance, not discrete diode; 2.0 × 2.0 mm QFN package. Used in multi-band cellular front-ends where integrated switching + detection replaces discrete diode + external switch. Choose only when system-level integration (switch + detector) is required; not a drop-in replacement.

Compared with NSVRB70MUT5G and SKY13370-374LF, BAS70JFILM offers the lowest cost, smallest footprint (SOD-323), and best balance of C/L/R for discrete RF detector use-while the alternatives trade size, integration, or qualification for specific system architectures.

Availability

BAS70JFILM is available at Aetrix Electronics and suitable for RF signal detection, temperature compensation networks, ESD-sensitive RF switches, and low-power bias clamps requiring stable component supply across industrial, medical telemetry, and consumer wireless designs.

Supply support for BAS70JFILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF components for industrial, automotive, and consumer markets.

The BAS70 series belongs to ST's precision RF discrete portfolio, engineered specifically for high-frequency signal integrity in detector, mixer, and bias compensation roles-not general-purpose rectification.

FAQ

What is the maximum RF frequency range supported by BAS70JFILM?

The BAS70JFILM supports operation up to approximately 1.3 GHz, determined by its 2 pF junction capacitance and 1.5 nH series inductance (self-resonant frequency ≈ 1/(2π√(LC))). Measured performance shows usable detector efficiency through 900 MHz with minimal phase distortion, validated in ST's application note AN2872 for RF envelope detection.

Can BAS70JFILM be used in place of a germanium diode in vintage RF detector circuits?

Yes-BAS70JFILM provides comparable 410 mV forward voltage at 1 mA (similar to germanium's ~300 mV), while offering superior temperature stability, lower leakage (<10 µA vs. >100 µA for Ge), and no risk of thermal runaway. Its SOD-323 footprint requires adapter layout but delivers repeatable, manufacturable performance versus aging germanium parts.

Is BAS70JFILM suitable for DC-coupled RF sampling applications?

No-its 10 µA reverse leakage at 70 V makes it unsuitable for high-impedance DC-coupled sampling where leakage-induced offset would exceed 1 mV in ≥100 kΩ paths. It is optimized for AC-coupled RF detection with capacitor isolation; for DC sampling, consider ultra-low-leakage Si PIN diodes like SMP1307-079.

Does BAS70JFILM require derating at elevated ambient temperatures?

Yes-derating is required per Figure 2 in the datasheet: average forward current drops from 70 mA at 25 °C ambient to 45 mA at 75 °C and 20 mA at 125 °C on standard epoxy PCBs. Thermal relief pads and copper pour reduce Rth(j-a) and extend usable current range in thermally demanding layouts.

BAS70JFILM Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 70 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
150°C (Max)

BAS70JFILM FAQ

1.How can I place an order for BAS70JFILM through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70JFILM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70JFILM reliable?

The price and inventory of BAS70JFILM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70JFILM is usually 5 days.

3.What payment methods are accepted for BAS70JFILM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70JFILM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70JFILM?

BAS70JFILM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70JFILM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70JFILM?

For technical support, including BAS70JFILM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70JFILM requirements.

6.How does Aetrix verify that BAS70JFILM is sourced from the original manufacturer or authorized distributors?

All BAS70JFILM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70JFILM meets industry standards.

7.What is the process for return or replacement of BAS70JFILM?

All BAS70JFILM units undergo pre-shipment inspection (PSI). If there is an issue with BAS70JFILM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70JFILM part is unused and in its original packaging.

Return procedure for BAS70JFILM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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