Diodes Incorporated BAS70Q-7-F

Overview

BAS70Q-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 70 V peak reverse voltage, 70 mA continuous forward current, and 0.41 V max forward voltage at 1.0 mA. It features a PN junction guard ring for transient and ESD protection and is AEC-Q101 qualified for automotive applications including power rail clamping and signal-level rectification in engine control units.

For engineers reviewing the BAS70Q-7-F datasheet, BAS70Q-7-F pinout, BAS70Q-7-F application, or BAS70Q-7-F equivalent, key selection criteria include its low VF (410 mV @ 1 mA), ultra-low IR (100 nA @ 50 V), 2.0 pF junction capacitance at 0 V, 625 °C/W thermal resistance, and SOT23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve fast switching (ns-range recovery) and minimal conduction loss. Its guard ring structure isolates the active junction from surface contamination and edge breakdown, enabling stable operation under repetitive transients up to 100 mA non-repetitive surge current.

The device operates across –55 °C to +125 °C junction temperature and derates linearly above 25 °C ambient, delivering 200 mW power dissipation at TA = 25 °C and ~80 mW at TA = 100 °C per the published derating curve. Its 2.0 pF capacitance at 0 V reverse bias supports high-frequency signal routing in RF detector and sample-and-hold circuits.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic case, 3-terminal, 2.9 mm × 1.3 mm × 1.0 mm body, matte tin-plated leads, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and BAT54C-7-F, the BAS70Q-7-F uniquely balances 70 V blocking, ultra-low leakage (<100 nA), and AEC-Q101 qualification-making it the only option among the three qualified for under-hood automotive deployment with verified ESD robustness.

Availability

BAS70Q-7-F is available at Aetrix Electronics and suitable for automotive engine control units, USB interface protection circuits, ADAS camera sensor biasing, and 77 GHz radar detector applications requiring stable component supply and long-term lifecycle assurance.

Supply support for BAS70Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Shanghai and Malaysia.

The BAS70Q belongs to Diodes' AEC-Q101-qualified Schottky diode product line, engineered specifically for automotive power management and signal protection where reliability, low VF, and ESD resilience are mandatory.

FAQ

Is BAS70Q-7-F suitable for reverse polarity protection in 24 V automotive systems?

Yes. With a 70 V peak reverse voltage rating and AEC-Q101 qualification, the BAS70Q-7-F safely blocks reverse battery connections and load dump transients in 24 V systems. Its 0.41 V forward voltage minimizes power loss and thermal rise during normal conduction, and the guard ring ensures stable performance under repeated ESD stress per ISO 10605.

What is the maximum allowable PCB temperature rise when operating at 70 mA continuous current?

At 70 mA and 25 °C ambient, the device dissipates ~29 mW (70 mA × 0.41 V). With RθJA = 625 °C/W, this yields ~18 °C junction-to-ambient rise. To maintain TJ ≤ 125 °C, PCB local temperature must stay ≤ 107 °C. Use ≥ 100 mm² copper pour under Pin 3 (tab) to reduce effective RθJA and allow full-rated current at 85 °C ambient.

Does the BAS70Q-7-F have a specified reverse recovery time (trr)?

No trr value is specified in the datasheet because Schottky diodes are majority-carrier devices with no minority-carrier storage delay. The device exhibits nanosecond-scale switching transitions, confirmed by typical forward/reverse characteristic curves showing negligible tail current. For high-speed applications, its 2.0 pF junction capacitance and low series resistance govern dynamic behavior-not recovery time.

Can BAS70Q-7-F replace BAT54 series diodes in existing designs?

Yes, with verification. BAS70Q-7-F shares the SOT23-3 footprint and pinout (Anode–Cathode–Cathode Tab) with BAT54 variants, but offers higher VR (70 V vs. 30 V) and lower IR (0.1 µA vs. 1 µA). Layout compatibility is confirmed; however, verify that the higher VR does not affect clamping thresholds in existing TVS-assisted circuits and that thermal relief matches the 200 mW PD rating.