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Nexperia USA Inc. BAS70-QR

Part No.:
BAS70-QR
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS70-QR.pdf
Description:
BAS70-Q/SOT23/TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,500

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Product details

Overview

BAS70-QR from Nexperia is a general-purpose Schottky diode in SOT23 package, designed for ultra-high-speed switching and voltage clamping. It delivers 70 V reverse voltage rating, 70 mA forward current capability, 410 mV forward voltage at 1 mA, 2 pF capacitance at 0 V, and qualifies to AEC-Q101 for automotive use.

For engineers reviewing the BAS70-QR datasheet, BAS70-QR pinout, BAS70-QR application, or BAS70-QR equivalent, key selection criteria include low VF for power-sensitive clamping, low Cd for RF/switching integrity, AEC-Q101 qualification for automotive reliability, and SOT23 footprint compatibility with high-density PCB layouts.

Technical Context

The BAS70-QR implements a planar Schottky barrier structure optimized for fast recovery (sub-nanosecond trr) and minimal stored charge. Its low junction capacitance (2 pF) and differential resistance (<1 Ω at 10 mA) support stable operation in high-frequency signal routing and transient suppression circuits.

Thermal performance is defined by a junction-to-ambient thermal resistance of 500 K/W on FR4 PCB with single-sided copper. The device operates across −65 °C to +150 °C ambient and junction temperatures, with leakage current held to ≤10 µA at 70 V and 25 °C.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)70 V - supports clamping in 48 V automotive systems and 24 V industrial rails without breakdown
Forward Voltage (VF)410 mV @ 1 mA - minimizes conduction loss in low-current bias and sensing paths
Capacitance (Cd)2 pF @ 0 V, 1 MHz - preserves signal integrity in >100 MHz switching nodes and RF detector inputs
Reverse Leakage (IR)10 µA @ 70 V, 25 °C - ensures stable DC blocking in precision voltage references and sample-hold circuits
PackageSOT23 (TO-236AB) - 2.9 mm × 1.3 mm × 1.0 mm surface-mount footprint compatible with standard reflow profiles
AEC-Q101 QualifiedYes - validated for automotive underhood and infotainment applications per stress test requirements

Pinout & Package

SOT23 plastic surface-mount package with 1.9 mm lead pitch, 2.9 mm × 1.3 mm body outline, and tin-plated terminations. Thermal resistance is 500 K/W (junction-to-ambient, FR4, single-sided copper).

Pin/TerminalCircuit RoleDesign Meaning
1Anode (A)Forward current entry point; connects to higher-potential node in clamping or rectification path
2Not Connected (n.c.)Internally isolated; must remain unconnected on PCB to avoid parasitic coupling or mechanical stress
3Cathode (K)Forward current exit and reverse-blocking terminal; ties to reference or ground plane in clamp configuration

Key Features

FeatureDesign Value
High switching speedSub-nanosecond reverse recovery time enables use in >500 MHz signal routing and pulse shaping
Low leakage current≤10 µA at VR = 70 V ensures stable DC bias in high-impedance sensor interfaces
Low capacitance2 pF at 0 V maintains bandwidth in RF detector and mixer local oscillator paths
AEC-Q101 qualificationValidated for automotive temperature cycling, humidity, and mechanical shock per discrete semiconductor standard

Applications

Automotive CAN Transceiver ProtectionUSB 2.0 Data Line Clamping

Use Scenario: Protects CANH/CANL bus lines against ESD and load-dump transients in vehicle ECUs.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed between transceiver I/O and connector, conducting only during overvoltage events.

Use Value: 70 V VR withstands ISO 7637-2 Pulse 5a (load dump), while 2 pF Cd avoids signal edge degradation on 1 Mbps CAN bus.

Use Scenario: Limits voltage excursions on D+ and D− lines during hot-plug or ESD events in USB 2.0 peripherals.

IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp referenced to VBUS and GND, shunting transients before they reach PHY.

Use Value: 410 mV VF at 1 mA ensures minimal DC offset in idle-state signaling; 2 pF Cd preserves 480 Mbps eye diagram integrity.

High-Frequency Signal DemodulationLow-Power Sensor Biasing

Use Scenario: Rectifies RF carrier signals in AM envelope detectors for wireless sensor nodes.

IC Role / Device Role / Timing Role: Schottky anode-cathode pair acting as zero-bias demodulator in passive receiver front-end.

Use Value: Sub-ns trr and 2 pF Cd enable accurate detection up to 2.4 GHz ISM band; 10 µA IR prevents DC drift in high-Z output stage.

Use Scenario: Provides temperature-stable bias current to silicon photodiodes in portable gas analyzers.

IC Role / Device Role / Timing Role: Forward-biased diode generating reference current via VF temperature coefficient (−2 mV/°C).

Use Value:

Use Value: 410 mV VF at 1 mA yields predictable current source; AEC-Q101 qualification assures operation across −40 °C to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NSR0230HT1G30 V VR, 200 mA IF, 0.45 V VF @ 10 mA, SOD-523 packageLower voltage rating limits use to 5–12 V systems; smaller footprint reduces thermal massSelect when board space is constrained and system rail ≤12 V; not suitable for 24/48 V automotive clamping
Vishay VS-2EDH01HM3/85A100 V VR, 1 A IF, 0.52 V VF @ 1 A, SOD-123 packageHigher current and voltage ratings increase thermal inertia and parasitic inductancePrefer for high-energy surge suppression where peak current exceeds 100 mA; less optimal for RF-sensitive nodes due to larger Cd

Compared with NSR0230HT1G and VS-2EDH01HM3/85A, the BAS70-QR uniquely balances 70 V robustness, 2 pF capacitance, and AEC-Q101 compliance in SOT23-making it optimal for automotive signal-line protection where both voltage margin and bandwidth matter.

Availability

BAS70-QR is available at Aetrix Electronics and suitable for automotive ECU protection, USB interface clamping, RF demodulation, and low-power sensor biasing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAS70-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET devices, with leadership in automotive-grade components.

The BAS70-QR belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, engineered specifically for signal integrity preservation and transient resilience in automotive and industrial signal-path applications.

FAQ

Is BAS70-QR suitable for bidirectional ESD protection?

No. The BAS70-QR is a unidirectional Schottky diode with anode and cathode terminals. For bidirectional ESD protection, two BAS70-QR devices must be connected in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated TVS array such as PESD5V0S1BA should be used instead.

What is the maximum continuous forward current for BAS70-QR?

The maximum continuous forward current (IF) is 70 mA at Tamb = 25 °C. Derating is required above 25 °C ambient: Rth(j-a) = 500 K/W implies junction temperature rises ~35 °C per 70 mA at free-air conditions, limiting practical DC current to ~30 mA at 85 °C ambient.

Can BAS70-QR replace BAS16 in existing designs?

Only with verification. BAS16 has 100 V VR and 225 mA IF but higher VF (~850 mV @ 10 mA) and Cd (~4 pF). BAS70-QR offers lower VF and Cd but reduced VR and IF. Replacement is viable in low-voltage, high-speed signal paths where 70 V margin suffices and leakage/capacitance dominate design constraints.

Does BAS70-QR have a built-in ESD protection diode?

No. The BAS70-QR itself is a discrete Schottky diode-not an integrated ESD protection device. Its AEC-Q101 qualification confirms robustness against automotive stress tests, but it does not include on-chip ESD structures like those found in dedicated ESD arrays (e.g., PUSB3FR4). External TVS or RC filtering remains necessary for IEC 61000-4-2 compliance.

BAS70-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 70 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB
Operating Temperature - Junction:
150°C

BAS70-QR FAQ

1.How can I place an order for BAS70-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70-QR reliable?

The price and inventory of BAS70-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-QR is usually 5 days.

3.What payment methods are accepted for BAS70-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70-QR?

BAS70-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70-QR?

For technical support, including BAS70-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-QR requirements.

6.How does Aetrix verify that BAS70-QR is sourced from the original manufacturer or authorized distributors?

All BAS70-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-QR meets industry standards.

7.What is the process for return or replacement of BAS70-QR?

All BAS70-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70-QR part is unused and in its original packaging.

Return procedure for BAS70-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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