Nexperia USA Inc. BAS70-QR
- Part No.:
- BAS70-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS70-QR.pdf
- Description:
- BAS70-Q/SOT23/TO-236AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,500
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Product details
Overview
BAS70-QR from Nexperia is a general-purpose Schottky diode in SOT23 package, designed for ultra-high-speed switching and voltage clamping. It delivers 70 V reverse voltage rating, 70 mA forward current capability, 410 mV forward voltage at 1 mA, 2 pF capacitance at 0 V, and qualifies to AEC-Q101 for automotive use.
For engineers reviewing the BAS70-QR datasheet, BAS70-QR pinout, BAS70-QR application, or BAS70-QR equivalent, key selection criteria include low VF for power-sensitive clamping, low Cd for RF/switching integrity, AEC-Q101 qualification for automotive reliability, and SOT23 footprint compatibility with high-density PCB layouts.
Technical Context
The BAS70-QR implements a planar Schottky barrier structure optimized for fast recovery (sub-nanosecond trr) and minimal stored charge. Its low junction capacitance (2 pF) and differential resistance (<1 Ω at 10 mA) support stable operation in high-frequency signal routing and transient suppression circuits.
Thermal performance is defined by a junction-to-ambient thermal resistance of 500 K/W on FR4 PCB with single-sided copper. The device operates across −65 °C to +150 °C ambient and junction temperatures, with leakage current held to ≤10 µA at 70 V and 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports clamping in 48 V automotive systems and 24 V industrial rails without breakdown |
| Forward Voltage (VF) | 410 mV @ 1 mA - minimizes conduction loss in low-current bias and sensing paths |
| Capacitance (Cd) | 2 pF @ 0 V, 1 MHz - preserves signal integrity in >100 MHz switching nodes and RF detector inputs |
| Reverse Leakage (IR) | 10 µA @ 70 V, 25 °C - ensures stable DC blocking in precision voltage references and sample-hold circuits |
| Package | SOT23 (TO-236AB) - 2.9 mm × 1.3 mm × 1.0 mm surface-mount footprint compatible with standard reflow profiles |
| AEC-Q101 Qualified | Yes - validated for automotive underhood and infotainment applications per stress test requirements |
Pinout & Package
SOT23 plastic surface-mount package with 1.9 mm lead pitch, 2.9 mm × 1.3 mm body outline, and tin-plated terminations. Thermal resistance is 500 K/W (junction-to-ambient, FR4, single-sided copper).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (A) | Forward current entry point; connects to higher-potential node in clamping or rectification path |
| 2 | Not Connected (n.c.) | Internally isolated; must remain unconnected on PCB to avoid parasitic coupling or mechanical stress |
| 3 | Cathode (K) | Forward current exit and reverse-blocking terminal; ties to reference or ground plane in clamp configuration |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-nanosecond reverse recovery time enables use in >500 MHz signal routing and pulse shaping |
| Low leakage current | ≤10 µA at VR = 70 V ensures stable DC bias in high-impedance sensor interfaces |
| Low capacitance | 2 pF at 0 V maintains bandwidth in RF detector and mixer local oscillator paths |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock per discrete semiconductor standard |
Applications
| Automotive CAN Transceiver Protection | USB 2.0 Data Line Clamping |
|---|---|
Use Scenario: Protects CANH/CANL bus lines against ESD and load-dump transients in vehicle ECUs. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed between transceiver I/O and connector, conducting only during overvoltage events. Use Value: 70 V VR withstands ISO 7637-2 Pulse 5a (load dump), while 2 pF Cd avoids signal edge degradation on 1 Mbps CAN bus. | Use Scenario: Limits voltage excursions on D+ and D− lines during hot-plug or ESD events in USB 2.0 peripherals. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp referenced to VBUS and GND, shunting transients before they reach PHY. Use Value: 410 mV VF at 1 mA ensures minimal DC offset in idle-state signaling; 2 pF Cd preserves 480 Mbps eye diagram integrity. |
| High-Frequency Signal Demodulation | Low-Power Sensor Biasing |
Use Scenario: Rectifies RF carrier signals in AM envelope detectors for wireless sensor nodes. IC Role / Device Role / Timing Role: Schottky anode-cathode pair acting as zero-bias demodulator in passive receiver front-end. Use Value: Sub-ns trr and 2 pF Cd enable accurate detection up to 2.4 GHz ISM band; 10 µA IR prevents DC drift in high-Z output stage. | Use Scenario: Provides temperature-stable bias current to silicon photodiodes in portable gas analyzers. IC Role / Device Role / Timing Role: Forward-biased diode generating reference current via VF temperature coefficient (−2 mV/°C). Use Value: Use Value: 410 mV VF at 1 mA yields predictable current source; AEC-Q101 qualification assures operation across −40 °C to +125 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | 30 V VR, 200 mA IF, 0.45 V VF @ 10 mA, SOD-523 package | Lower voltage rating limits use to 5–12 V systems; smaller footprint reduces thermal mass | Select when board space is constrained and system rail ≤12 V; not suitable for 24/48 V automotive clamping |
| Vishay VS-2EDH01HM3/85A | 100 V VR, 1 A IF, 0.52 V VF @ 1 A, SOD-123 package | Higher current and voltage ratings increase thermal inertia and parasitic inductance | Prefer for high-energy surge suppression where peak current exceeds 100 mA; less optimal for RF-sensitive nodes due to larger Cd |
Compared with NSR0230HT1G and VS-2EDH01HM3/85A, the BAS70-QR uniquely balances 70 V robustness, 2 pF capacitance, and AEC-Q101 compliance in SOT23-making it optimal for automotive signal-line protection where both voltage margin and bandwidth matter.
Availability
BAS70-QR is available at Aetrix Electronics and suitable for automotive ECU protection, USB interface clamping, RF demodulation, and low-power sensor biasing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS70-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET devices, with leadership in automotive-grade components.
The BAS70-QR belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, engineered specifically for signal integrity preservation and transient resilience in automotive and industrial signal-path applications.
FAQ
Is BAS70-QR suitable for bidirectional ESD protection?
No. The BAS70-QR is a unidirectional Schottky diode with anode and cathode terminals. For bidirectional ESD protection, two BAS70-QR devices must be connected in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated TVS array such as PESD5V0S1BA should be used instead.
What is the maximum continuous forward current for BAS70-QR?
The maximum continuous forward current (IF) is 70 mA at Tamb = 25 °C. Derating is required above 25 °C ambient: Rth(j-a) = 500 K/W implies junction temperature rises ~35 °C per 70 mA at free-air conditions, limiting practical DC current to ~30 mA at 85 °C ambient.
Can BAS70-QR replace BAS16 in existing designs?
Only with verification. BAS16 has 100 V VR and 225 mA IF but higher VF (~850 mV @ 10 mA) and Cd (~4 pF). BAS70-QR offers lower VF and Cd but reduced VR and IF. Replacement is viable in low-voltage, high-speed signal paths where 70 V margin suffices and leakage/capacitance dominate design constraints.
Does BAS70-QR have a built-in ESD protection diode?
No. The BAS70-QR itself is a discrete Schottky diode-not an integrated ESD protection device. Its AEC-Q101 qualification confirms robustness against automotive stress tests, but it does not include on-chip ESD structures like those found in dedicated ESD arrays (e.g., PUSB3FR4). External TVS or RC filtering remains necessary for IEC 61000-4-2 compliance.
BAS70-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Operating Temperature - Junction:
- 150°C
BAS70-QR FAQ
1.How can I place an order for BAS70-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-QR reliable?
The price and inventory of BAS70-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-QR is usually 5 days.
3.What payment methods are accepted for BAS70-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-QR?
BAS70-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-QR?
For technical support, including BAS70-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-QR requirements.
6.How does Aetrix verify that BAS70-QR is sourced from the original manufacturer or authorized distributors?
All BAS70-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-QR meets industry standards.
7.What is the process for return or replacement of BAS70-QR?
All BAS70-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-QR part is unused and in its original packaging.
Return procedure for BAS70-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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