Nexperia USA Inc. BAS70VV,115
- Part No.:
- BAS70VV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAS70VV,115.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:50,542
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Product details
Overview
BAS70VV from Nexperia is a general-purpose triple Schottky diode in SOT666 package, integrating three independent low-leakage, high-speed diodes with 70 V reverse voltage rating, 410 mV forward voltage at 1 mA, and 2 pF capacitance at 0 V - used for ultra-high-speed switching and voltage clamping in compact DC-DC converter feedback paths and signal line protection.
For engineers reviewing the BAS70VV datasheet, BAS70VV pinout, BAS70VV application, or BAS70VV equivalent, this page delivers verified electrical parameters, validated SOT666 terminal mapping, real-world clamping and switching use cases, and cross-reference alternatives with documented thermal and leakage trade-offs.
Technical Context
The BAS70VV implements three monolithically integrated Schottky junctions sharing no internal connection - each anode (A1–A3) and cathode (K1–K3) is fully isolated, enabling independent routing in multi-rail clamping or dual-path signal steering. Its 150 °C maximum junction temperature and 700 K/W junction-to-ambient thermal resistance reflect FR4 PCB mounting constraints.
Designed for pulsed operation (tp ≤ 300 µs, duty δ ≤ 0.02), it delivers stable 410–1000 mV VF across 1–15 mA forward current while maintaining ≤10 µA IR at 70 V VR - critical for low-power rail-to-rail clamp integrity in battery-operated sensor interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Device Type | Triple independent Schottky diode - three isolated anode/cathode pairs in single SOT666 package |
| VR (Reverse Voltage) | 70 V - supports clamping up to 70 V DC rails without breakdown under ambient conditions |
| VF @ 1 mA | 410 mV - enables low-loss biasing and sensing in microampere-level signal paths |
| IR @ 70 V | 10 µA - ensures minimal leakage-induced offset in precision voltage reference circuits |
| Cd @ 0 V / 1 MHz | 2 pF - allows clean high-frequency signal routing without capacitive loading distortion |
| IF (Continuous) | 70 mA - sufficient for logic-level clamping and transient suppression in low-current digital I/O |
| Tj (Max) | 150 °C - compatible with reflow-soldered industrial PCB environments without derating |
Pinout & Package
SOT666 package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body; surface-mount, reflow-only assembly; pin 1 marked with index notch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 (anode of diode 1) | Independent input node for first Schottky path - routed to primary signal rail or feedback node |
| 2 | A2 (anode of diode 2) | Second isolated anode - enables dual-rail clamping or differential signal steering |
| 3 | A3 (anode of diode 3) | Third independent anode - supports triple-voltage domain protection or redundancy |
| 4 | K3 (cathode of diode 3) | Corresponding cathode for A3 - completes third isolated clamp path |
| 5 | K2 (cathode of diode 2) | Corresponding cathode for A2 - maintains full isolation between all three diodes |
| 6 | K1 (cathode of diode 1) | Corresponding cathode for A1 - no shared cathodes or anodes; true triple discrete-in-one |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-nanosecond recovery enabled by Schottky barrier - avoids minority-carrier delay in pulse shaping |
| Low leakage current | ≤10 µA at 70 V VR - preserves accuracy in high-impedance voltage divider and reference networks |
| Low capacitance | 2 pF at 0 V - minimizes signal rise-time degradation in >100 MHz data lines |
| High breakdown voltage | 70 V VR rating - supports direct interface with 48 V industrial buses and PoE-powered systems |
| Ultra-small footprint | SOT666 (1.6 × 1.2 mm) - saves >60% board area vs. three discrete SOD-323 diodes |
Applications
| USB 2.0 Data Line Protection | DC-DC Converter Feedback Clamp |
|---|---|
|
Use Scenario: Clamping ESD transients on D+/D− lines before USB PHY input. IC Role / Device Role / Timing Role: Signal-line bidirectional clamp using A1/K1 and A2/K2 as independent paths per line. Use Value: 2 pF capacitance prevents signal integrity loss at 480 Mbps; 410 mV VF ensures minimal DC offset. |
Use Scenario: Limiting error amplifier output swing in isolated flyback feedback loop. IC Role / Device Role / Timing Role: Triple clamp: A1/K1 protects optocoupler input, A2/K2 clamps TL431 reference, A3/K3 guards compensation network. Use Value: Independent terminals avoid crosstalk; 70 V VR withstands reflected flyback spikes. |
| Low-Power Sensor Bias Network | Multi-Rail Logic-Level Translation |
|
Use Scenario: Providing stable bias to MEMS pressure sensor bridge with rail-to-rail common-mode range. IC Role / Device Role / Timing Role: Three independent Schottky diodes form precision clamp network around bridge excitation and sense nodes. Use Value: ≤10 µA IR prevents measurement drift; 410 mV VF sets accurate clamp threshold near supply rails. |
Use Scenario: Level-shifting GPIO signals between 1.8 V, 3.3 V, and 5 V domains in MCU peripheral expansion. IC Role / Device Role / Timing Role: Each diode pair (A1/K1, A2/K2, A3/K3) handles one direction/rail combination in passive translator topology. Use Value: Low VF ensures <100 mV translation loss; 70 mA IF supports 10 mA drive capability per path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar triple Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Triple N-channel MOSFET (not diode); 30 V VDS, 2.6 A ID - requires gate drive, no inherent unidirectional conduction | Used for active OR-ing or load switching, not passive clamping or rectification | Select only when active control and bidirectional current handling are required |
| BAT54CW,115 | Triple Schottky in SOT323 (2.1 × 1.25 mm); 30 V VR, 300 mV VF @ 10 mA, 5 pF Cd - lower voltage rating, higher capacitance | Acceptable for 3.3/5 V systems but unsuitable for 48 V bus clamping or >30 V transient suppression | Choose for cost-sensitive 5 V designs where 70 V rating is unnecessary and board space is less constrained |
Compared with BAT54CW,115, BAS70VV provides 133% higher reverse voltage margin and 60% lower capacitance - critical for industrial 48 V interfaces; versus DMN3026LSD-13, it offers zero-bias passive operation without gate control overhead.
Availability
BAS70VV is available at Aetrix Electronics and suitable for ultra-high-speed switching, voltage clamping, low-power sensor biasing, and multi-rail logic translation requiring stable component supply and consistent SOT666 packaging.
Supply support for BAS70VV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic, analog, and discrete components - headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.
The BAS70VV belongs to Nexperia's general-purpose Schottky diode product line, engineered for space-constrained, high-efficiency clamping and switching in industrial, computing, and consumer power management systems.
FAQ
Is BAS70VV automotive qualified?
No. The datasheet explicitly states "non-automotive qualification" in the revision history. It is rated for industrial and commercial temperature ranges (−65 °C to +150 °C) but has not undergone AEC-Q101 stress testing or PPAP documentation. Use in automotive applications requires customer validation and assumes full liability.
Can BAS70VV be used in place of three discrete BAS70-04 diodes?
No - BAS70-04 is a dual-diode variant in SOT23 package with shared cathode. BAS70VV has six fully isolated terminals (three independent anode/cathode pairs), enabling true triple-rail independence. Substitution would require PCB redesign to accommodate separate cathode routing and SOT666 footprint.
What is the recommended soldering profile for BAS70VV?
Nexperia specifies reflow soldering only, with peak temperature ≤260 °C and time above 217 °C limited to 60 seconds. The device must be mounted on FR4 PCB with single-sided copper and standard SOT666 footprint (Fig. 6). Wave or hand soldering is not recommended due to thermal stress risk.
Does BAS70VV support bidirectional ESD protection?
No - as a Schottky diode, it conducts only anode-to-cathode. For bidirectional ESD clamping, two BAS70VV devices must be back-to-back (e.g., A1→K2 and A2→K1) or paired with TVS diodes. Its 70 V VR rating applies only in forward bias; reverse breakdown is not specified or guaranteed.
BAS70VV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BAS70VV,115 FAQ
1.How can I place an order for BAS70VV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70VV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70VV,115 reliable?
The price and inventory of BAS70VV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70VV,115 is usually 5 days.
3.What payment methods are accepted for BAS70VV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70VV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70VV,115?
BAS70VV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70VV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70VV,115?
For technical support, including BAS70VV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70VV,115 requirements.
6.How does Aetrix verify that BAS70VV,115 is sourced from the original manufacturer or authorized distributors?
All BAS70VV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70VV,115 meets industry standards.
7.What is the process for return or replacement of BAS70VV,115?
All BAS70VV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70VV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70VV,115 part is unused and in its original packaging.
Return procedure for BAS70VV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70VV,115 Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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