Diodes Incorporated BAS70W-05-7-F

Overview

BAS70W-05-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 70 V peak reverse voltage, 70 mA forward current, and 5.0 ns reverse recovery time. It features low forward voltage (410 mV @ 1 mA), ultra-low capacitance (2.0 pF @ 0 V), and PN junction guard ring for ESD/transient protection - used in high-speed signal clamping and RF detector circuits.

For engineers reviewing the BAS70W-05-7-F datasheet, BAS70W-05-7-F pinout, BAS70W-05-7-F application, or BAS70W-05-7-F equivalent, key selection criteria include reverse recovery speed, junction capacitance, forward voltage at low current, thermal resistance (625 °C/W), and SOT323 footprint compatibility in space-constrained RF and portable power management designs.

Technical Context

This Schottky diode leverages a low-barrier metal-semiconductor junction to achieve fast switching (trr ≤ 5.0 ns) and minimal forward voltage drop (VF = 410 mV @ IF = 1 mA). Its 2.0 pF junction capacitance at 0 V enables effective RF signal detection and high-frequency clamping up to ~1 GHz.

The integrated PN junction guard ring provides robust transient suppression and ESD protection per IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact), while the SOT323 package supports reflow-compatible assembly on FR-4 PCBs with defined thermal pad layout per Diodes' recommended footprint.

Key Specifications

Pinout & Package

Package: SOT323 - ultra-small plastic surface-mount package (2.00 × 2.225 × 0.90 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and SBAT54CLT1G, BAS70W-05-7-F uniquely balances ultra-low capacitance (2.0 pF), moderate reverse voltage (70 V), and SOT323 compactness - making it optimal for single-diode RF detection and space-limited ESD clamping where both speed and size are critical.

Availability

BAS70W-05-7-F is available at Aetrix Electronics and suitable for RF detector modules, ESD-protected I/O interfaces, and high-speed logic clamping requiring stable component supply across automotive infotainment, industrial HMI, and wearable electronics programs.

Supply support for BAS70W-05-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS70W series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for RF detection, low-leakage clamping, and ESD-hardened signal conditioning in miniaturized portable and industrial electronics.

FAQ

What is the maximum junction temperature for continuous operation?

The BAS70W-05-7-F has an operating junction temperature range of –55°C to +125°C. At ambient temperatures above 25°C, power dissipation must be derated linearly per the 625 °C/W thermal resistance and the curve in Figure 4 - e.g., at TA = 85°C, max PD drops to 120 mW to maintain TJ ≤ 125°C.

Is this diode suitable for reverse polarity protection in 5 V systems?

No - the 70 V VRRM rating is sufficient, but its 70 mA IF rating and 200 mW PD limit make it unsuitable for main power rail protection. It is designed for signal-level clamping and detection, not load-switching or bulk current handling. Use dedicated load switches or MOSFET-based protectors instead.

Does the SOT323 package include a thermal pad?

No - the SOT323 package for BAS70W-05-7-F has three terminals: anode, cathode, and non-electrical case (mechanical anchor only). The "exposed pad" in some SOT323 variants is absent here; thermal transfer relies solely on leadframe conduction through the two active pins per Diodes' recommended pad layout.

How does the guard ring affect ESD performance compared to standard Schottkys?

The integrated PN junction guard ring prevents premature edge breakdown under high dv/dt transients, enabling reliable clamping at ±8 kV contact discharge (IEC 61000-4-2 Level 4). Standard Schottky diodes without guard rings typically fail below ±4 kV due to localized junction avalanche.