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Diodes Incorporated BAS70W-06-7-F
- Part No.:
- BAS70W-06-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS70W-06-7-F.pdf
- Description:
- DIODE ARR SCHOTT 70V 70MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:7,835
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Product details
Overview
BAS70W-06-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 70 V peak repetitive reverse voltage, 70 mA forward current, and 5.0 ns reverse recovery time. It features low forward voltage (410 mV @ 1 mA), ultra-small footprint, and PN junction guard ring for ESD/transient protection-used in high-speed signal clamping and polarity protection circuits in portable power management.
For engineers reviewing the BAS70W-06-7-F datasheet, BAS70W-06-7-F pinout, BAS70W-06-7-F application, or BAS70W-06-7-F equivalent, key selection criteria include reverse breakdown voltage (70 V), fast switching performance (trr ≤ 5.0 ns), low VF at low IF, total capacitance (≤ 2.0 pF @ 0 V), and SOT323 thermal resistance (625 °C/W).
Technical Context
This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve fast switching and low forward voltage drop. Its guard ring structure suppresses edge leakage and improves transient robustness without compromising speed.
The device operates across –55 °C to +125 °C and derates linearly above +25 °C per the 200 mW power limit and 625 °C/W RθJA, with capacitance decreasing from 2.0 pF at 0 V to <0.5 pF at 50 V reverse bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 70 V - maximum allowable repetitive reverse voltage before breakdown; defines safe operating range in clamp/protection circuits |
| IF | 70 mA - continuous forward current rating; sets upper limit for steady-state conduction in signal path applications |
| VF | 410 mV @ 1 mA - low turn-on voltage enables efficient clamping at low signal levels without loading source |
| trr | 5.0 ns - ultra-fast recovery supports >100 MHz switching in RF detector or sample-and-hold front ends |
| CT | 2.0 pF @ 0 V - minimal junction capacitance preserves high-frequency signal integrity in RF/IF paths |
| RθJA | 625 °C/W - thermal resistance on standard FR-4 board; requires layout-aware copper pour for sustained 70 mA operation |
Pinout & Package
Package: SOT323 - ultra-compact 3-pin surface-mount plastic package (2.0 × 2.225 × 0.9 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.006 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node in clamping or rectification; polarity marked by cathode band on package top view |
| Cathode (Pin 2) | Forward current exit / reverse blocking terminal | Typically tied to ground or reference rail; carries full reverse voltage during off-state |
| No-connect (Pin 3) | Internal die attach pad (non-functional) | Thermally conductive but electrically isolated; may be grounded for thermal relief but must not be used as signal path |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 410 mV @ 1 mA enables sub-1 V signal clamping without forward conduction loss in low-voltage logic interfaces |
| Fast switching | 5.0 ns reverse recovery time supports clean edge preservation in >100 MHz digital or RF sampling circuits |
| Guard ring protection | Integrated PN junction guard ring suppresses surface leakage and improves ESD robustness (HBM > 8 kV typical) |
| Ultra-small SOT323 | 2.0 × 2.225 mm footprint saves PCB area in space-constrained wearables and IoT sensor nodes |
Applications
| USB Port Polarity Protection | RF Signal Detector Clamping |
|---|---|
Use Scenario: Preventing damage from reversed USB cable insertion in portable chargers and OTG accessories. IC Role / Device Role / Timing Role: Schottky diode placed in series with VBUS line to block reverse current while minimizing forward drop. Use Value: 410 mV VF at 1 mA ensures <50 mV loss at 100 mA load, preserving USB 2.0 voltage margin under worst-case conditions. | Use Scenario: Protecting ADC inputs from RF detector output overshoot in 2.4 GHz ISM-band receivers. IC Role / Device Role / Timing Role: Clamp diode limiting peak voltage to ~0.4 V above reference, leveraging fast trr to avoid distortion. Use Value: 2.0 pF CT and 5.0 ns trr prevent capacitive loading and ringing on high-Z detector outputs. |
| Low-Power Sensor Biasing | Logic-Level Translation Interface |
Use Scenario: Providing stable bias current to MEMS microphone or analog temperature sensor in battery-powered nodes. IC Role / Device Role / Timing Role: Reverse-biased Schottky used as low-leakage voltage reference element or leakage-suppressing isolation. Use Value: 100 nA IR @ 50 V ensures negligible error current (<0.1% of 100 µA bias) over full industrial temperature range. | Use Scenario: Level-shifting between 1.8 V microcontroller GPIO and 3.3 V peripheral interface with bidirectional signal integrity. IC Role / Device Role / Timing Role: Back-to-back Schottky pair (e.g., BAS70W-06 + matching part) enabling passive bidirectional translation. Use Value: Matched VF and low CT ensure symmetric rise/fall times and <1 ns skew in 10–50 MHz data lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB521S-30T2R | 30 V VRRM, 200 mA IF, 0.35 V VF @ 100 mA - lower voltage rating, higher current, lower VF at high IF | Suitable for 3.3 V systems only; insufficient for 5 V or 12 V clamp rails where 70 V rating is required | Select when forward current exceeds 70 mA and reverse voltage stays below 30 V |
| NSR0230HT1G | 30 V VRRM, 200 mA IF, 0.33 V VF @ 100 mA, SOD-523 package - same voltage limit, smaller footprint, higher current | Not suitable for 50–70 V transient suppression; lacks guard ring; lower ESD robustness | Prefer for ultra-dense layouts where 30 V rating suffices and ESD stress is controlled |
Compared with RB521S-30T2R and NSR0230HT1G, BAS70W-06-7-F uniquely balances 70 V standoff, 5 ns speed, and SOT323 manufacturability-making it optimal for mixed-voltage industrial interfaces where both voltage margin and signal fidelity matter.
Availability
BAS70W-06-7-F is available at Aetrix Electronics and suitable for USB power protection, RF detector clamping, low-power sensor biasing, and logic-level translation requiring stable component supply across automotive-grade extended temperature programs.
Supply support for BAS70W-06-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The BAS70W series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-VF, low-CT, and fast-trr performance in portable, wireless, and space-constrained signal-path applications.
FAQ
What is the maximum reverse voltage rating for BAS70W-06-7-F?
The maximum repetitive reverse voltage (VRRM) is 70 V, verified per DS30113 Rev. 14–2. This rating applies under continuous DC or repetitive pulse conditions at TA = +25°C. Derating is required above +25°C per the power derating curve, and transient spikes beyond 70 V require external TVS coordination.
Does BAS70W-06-7-F have a functional third pin?
No. Pin 3 in the SOT323 package is an internal die attach pad with no electrical connection to the die. It is thermally conductive but electrically isolated-intended for mechanical stability and optional thermal relief, not circuit functionality.
How does the guard ring improve reliability in BAS70W-06-7-F?
The integrated PN junction guard ring surrounds the active Schottky region to suppress edge leakage currents and prevent premature avalanche at the junction periphery. This enhances ESD tolerance (HBM > 8 kV typical) and improves long-term stability under repeated transient stress in unregulated input paths.
Can BAS70W-06-7-F replace BAS70W-04-7-F or BAS70W-05-7-F in a design?
Yes, with verification. All three share identical package, thermal specs, and switching performance. The suffix denotes minor process or test bin differences: -04/-05 specify tighter VF or IR limits. BAS70W-06-7-F meets full datasheet min/max specs but has looser initial test tolerances-suitable for cost-sensitive designs where nominal performance suffices.
BAS70W-06-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io) (per Diode):
- 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAS70W-06-7-F FAQ
1.How can I place an order for BAS70W-06-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70W-06-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70W-06-7-F reliable?
The price and inventory of BAS70W-06-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70W-06-7-F is usually 5 days.
3.What payment methods are accepted for BAS70W-06-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70W-06-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70W-06-7-F?
BAS70W-06-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70W-06-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70W-06-7-F?
For technical support, including BAS70W-06-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70W-06-7-F requirements.
6.How does Aetrix verify that BAS70W-06-7-F is sourced from the original manufacturer or authorized distributors?
All BAS70W-06-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70W-06-7-F meets industry standards.
7.What is the process for return or replacement of BAS70W-06-7-F?
All BAS70W-06-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS70W-06-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70W-06-7-F part is unused and in its original packaging.
Return procedure for BAS70W-06-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS70W-06-7-F Tags
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BAV99-7-F
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