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Nexperia USA Inc. BAS70W,115

Part No.:
BAS70W,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAS70W,115.pdf
Description:
DIODE SCHOTTKY 70V 70MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,125

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Product details

Overview

BAS70W from Nexperia is a general-purpose Schottky diode in SOT323 (SC-70) package, designed for ultra-high-speed switching and voltage clamping. It delivers 70 V reverse voltage rating, 70 mA forward current capability, 410 mV forward voltage at 1 mA, 2 pF diode capacitance at 0 V, and 100 nA reverse leakage at 50 V - enabling compact, low-loss signal path protection in space-constrained DC-DC converters and logic interface circuits.

For engineers reviewing the BAS70W datasheet, BAS70W pinout, BAS70W application, or BAS70W equivalent, key selection criteria include its low VF/IR trade-off, SC-70 thermal resistance (625 K/W), n.c. terminal isolation, and suitability for pulsed switching in 3.3 V/5 V digital I/O protection, RF detector biasing, and clamp-based transient suppression where minimal stored charge and fast recovery are critical.

Technical Context

The BAS70W employs a planar Schottky barrier structure optimized for low forward voltage and minimal junction capacitance. Its anode-cathode-n.c. terminal configuration isolates unused lead to reduce parasitic coupling in high-frequency layouts, while the SOT323 footprint supports automated placement on dense PCBs with standard reflow profiles.

Thermal performance is defined under JEDEC JESD51-2 conditions: Rth(j-a) = 625 K/W on single-sided FR4, limiting continuous power dissipation to ~160 mW at ambient. The device operates across −65 °C to +150 °C junction temperature, with IR rising to 10 µA at VR = 70 V and Tamb = 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 70 V - supports clamping in 48 V industrial bus interfaces and 24 V automotive auxiliary circuits without breakdown.
Forward Voltage (VF) 410 mV @ 1 mA - enables low-loss biasing of RF detectors and precision analog front-ends with minimal headroom loss.
Reverse Leakage (IR) 100 nA @ 50 V - ensures stable DC reference integrity in high-impedance sample-and-hold networks.
Diode Capacitance (Cd) 2 pF @ 0 V, 1 MHz - preserves signal edge fidelity in >500 MHz clock distribution and ESD protection paths.
Thermal Resistance (Rth(j-a)) 625 K/W - defines maximum continuous power (160 mW) on standard FR4; requires derating above 25 °C ambient.
Package SOT323 (SC-70) - 2.0 mm × 1.25 mm × 0.95 mm body with 1.3 mm lead pitch; compatible with IPC-7351B footprint sot323_fr.

Pinout & Package

SOT323 (SC-70) plastic surface-mount package with 3 leads, 1.3 mm pitch, and standard tin-plated copper footprint per Figure 6 (reflow) and Figure 7 (wave soldering). Dimensions: 2.0 mm × 1.25 mm × 0.95 mm body height.

Pin/Terminal Circuit Role Design Meaning
1 Anode (A) Forward current entry point; connects to higher-potential node in clamping or rectification path.
2 Not Connected (n.c.) Internally unconnected; electrically isolated to minimize stray capacitance and crosstalk in RF layouts.
3 Cathode (K) Forward current exit and reverse-blocking terminal; ties to ground or lower-potential rail in clamp configurations.

Key Features

Feature Design Value
High switching speed Sub-nanosecond recovery enabled by low stored charge (QR not specified but implied by Schottky architecture and <2 pF Cd).
Low leakage current 100 nA @ 50 V ensures <0.1 % error in microamp-level sensor bias networks over temperature.
High breakdown voltage 70 V VR rating allows use in 48 V PoE injectors and 36 V automotive subsystems without derating.
Low capacitance 2 pF junction capacitance minimizes loading on 50 Ω RF traces and preserves rise/fall times in >1 GHz signal paths.

Applications

Logic-Level Clamp Protection RF Detector Biasing

Use Scenario: Protecting 3.3 V CMOS inputs from 5 V hot-swap transients in mixed-voltage backplanes.

IC Role / Device Role: Low-VF Schottky clamp between I/O pin and VCC, shunting overvoltage before internal ESD diodes activate.

Use Value: 410 mV VF limits clamping threshold to ~3.71 V, preventing latch-up while maintaining noise margin.

Use Scenario: Providing temperature-stable bias to GaAs FET-based RF power detectors in cellular base stations.

IC Role / Device Role: Forward-biased Schottky providing low-noise, low-capacitance DC bias current to detector anode.

Use Value: 2 pF Cd avoids detuning 2.6 GHz matching networks; 100 nA IR prevents drift in µA-range bias currents.

DC-DC Converter Snubber High-Speed Data Line Clamping

Use Scenario: Suppressing flyback spikes across synchronous buck converter high-side MOSFETs operating at 2 MHz.

IC Role / Device Role: Fast-recovery Schottky snubber diode across MOSFET drain-source to limit dV/dt-induced ringing.

Use Value: 70 V VR withstands 2× input voltage surges; sub-ns recovery prevents energy recirculation into gate drive.

Use Scenario: Clamping ESD transients on USB 2.0 D+/D− lines in portable medical monitors.

IC Role / Device Role: Bidirectional clamp (anode-to-ground, cathode-to-VCC) limiting line voltage to safe levels during ±8 kV contact discharge.

Use Value: 2 pF Cd avoids signal integrity degradation at 480 Mbps; 70 mA IF handles IEC 61000-4-2 peak currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5711 DO-35 through-hole package; VF = 600 mV @ 10 mA; Cd = 4 pF; VR = 70 V. Not suitable for SMT-only designs; higher Cd degrades >200 MHz signal integrity. Select when legacy through-hole assembly or higher surge current (IFSM = 500 mA) is required.
RB521S-30T2R SOD-523 package; VF = 370 mV @ 10 mA; Cd = 10 pF; VR = 30 V; smaller 1.2 mm × 0.8 mm footprint. Limited to ≤3.3 V systems due to 30 V VR; higher Cd increases insertion loss in RF paths. Select for ultra-compact 1.8 V/3.3 V logic clamping where VR margin is sufficient and board area is critical.

Compared with 1N5711 and RB521S-30T2R, the BAS70W uniquely balances 70 V VR, 2 pF Cd, and SOT323 manufacturability - making it optimal for 24–48 V industrial clamping and RF-sensitive applications where both voltage headroom and high-frequency performance are non-negotiable.

Availability

BAS70W is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and portable medical instrumentation requiring stable component supply and long-term SMT process compatibility.

Supply support for BAS70W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BAS70W belongs to Nexperia's general-purpose Schottky diode product line, engineered for cost-effective, high-speed switching in consumer, industrial, and communications equipment where low VF, low Cd, and robust thermal behavior are essential.

FAQ

Is the BAS70W suitable for automotive applications?

No - the BAS70W is not AEC-Q200 qualified or tested for automotive use. Nexperia explicitly states in its legal disclaimers that non-automotive-qualified products like the BAS70W are unsuitable for safety-critical or life-support systems. For automotive designs, select AEC-Q200-compliant alternatives such as the PMEG3010CPA or BAS70-04W.

What is the meaning of the 'n.c.' pin in the BAS70W pinout?

Pin 2 is internally not connected - it serves no electrical function and must remain unbonded and unconnected on the PCB. This design reduces parasitic capacitance and improves high-frequency isolation, especially critical in RF detector and high-speed data line applications where stray coupling could degrade performance.

Can the BAS70W replace a 1N4148 in high-speed switching circuits?

Yes, but only where low forward voltage and fast recovery are prioritized over high reverse voltage tolerance. The BAS70W offers lower VF (410 mV vs. 715 mV) and faster switching than the 1N4148, but its 70 V VR is lower than the 1N4148's 100 V rating. Use BAS70W in ≤48 V systems needing minimal conduction loss; retain 1N4148 for ≥75 V applications.

How does the BAS70W's thermal resistance affect PCB layout?

With Rth(j-a) = 625 K/W on standard FR4, the BAS70W dissipates only ~160 mW at 25 °C ambient before reaching 150 °C junction temperature. To maintain reliability, avoid placing it near heat sources, use minimum 1 mm² copper pour under the pad, and ensure airflow if ambient exceeds 50 °C - otherwise, derate IF to ≤35 mA at 70 °C ambient.

BAS70W,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 70 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323
Operating Temperature - Junction:
150°C (Max)

BAS70W,115 FAQ

1.How can I place an order for BAS70W,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70W,115 reliable?

The price and inventory of BAS70W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70W,115 is usually 5 days.

3.What payment methods are accepted for BAS70W,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70W,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70W,115?

BAS70W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70W,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70W,115?

For technical support, including BAS70W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70W,115 requirements.

6.How does Aetrix verify that BAS70W,115 is sourced from the original manufacturer or authorized distributors?

All BAS70W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70W,115 meets industry standards.

7.What is the process for return or replacement of BAS70W,115?

All BAS70W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70W,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70W,115 part is unused and in its original packaging.

Return procedure for BAS70W,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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