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Diodes Incorporated BAS70W-7-F
- Part No.:
- BAS70W-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS70W-7-F.pdf
- Description:
- DIODE SCHOTTKY 70V 70MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:22,119
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Product details
Overview
BAS70W-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 70 V peak repetitive reverse voltage, 70 mA forward current, and 5.0 ns reverse recovery time. It features low forward voltage (410 mV @ 1 mA), ultra-small footprint, and PN junction guard ring for ESD/transient protection-used in high-frequency signal clamping and polarity protection circuits in portable power management.
For engineers reviewing the BAS70W-7-F datasheet, BAS70W-7-F pinout, BAS70W-7-F application, or BAS70W-7-F equivalent, key selection criteria include reverse recovery time, forward voltage at low current, reverse leakage at 50 V, total capacitance at 0 V, and thermal resistance for compact PCB layouts with limited copper area.
Technical Context
This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve fast switching and low VF. Its guard-ringed PN structure suppresses edge breakdown and improves transient robustness without compromising speed.
Designed for operation from –55 °C to +125 °C, it delivers stable performance under thermal cycling in space-constrained consumer and industrial modules. The 2.0 pF capacitance at 0 V and 5.0 ns trr support RF detector, sample-and-hold, and high-speed logic interface applications up to ~100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 70 V - Maximum reverse voltage before breakdown; sets upper limit for clamp or blocking use in 48 V systems. |
| VF @ 1 mA | 410 mV - Low forward drop enables efficient signal-level rectification in battery-powered sensor interfaces. |
| trr | 5.0 ns - Enables clean switching in >100 MHz clocked circuits and RF envelope detection. |
| IR @ 50 V | 100 nA - Minimal leakage preserves signal integrity in high-impedance bias networks. |
| CT @ 0 V | 2.0 pF - Low junction capacitance minimizes loading on high-frequency signal paths. |
| RθJA | 625 °C/W - Requires minimal PCB copper for thermal relief in FR-4 layouts with standard pad dimensions. |
Pinout & Package
Package: SOT323 - ultra-compact 3-pin surface-mount plastic package (2.00 × 2.225 × 0.90 mm), lead-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry | Connected to higher-potential node in clamping or rectification; marked side of package indicates cathode. |
| Cathode (Pin 2) | Forward current exit / reverse blocking terminal | Connected to reference or ground; forms low-leakage reverse-biased junction when VR ≤ 70 V. |
| NC (Pin 3) | No connection | Internally unconnected; electrically isolated; must not be soldered to trace or plane. |
Key Features
| Feature | Design Value |
|---|---|
| Low turn-on voltage | 410 mV @ 1 mA enables signal-level detection without active amplification in low-power sensors. |
| Fast switching | 5.0 ns reverse recovery supports clean edge transitions in 100+ MHz digital timing paths. |
| PN junction guard ring | Suppresses edge avalanche, improving ESD robustness (HBM > 8 kV typical) and long-term reliability under surge stress. |
| Ultra-small SOT323 package | 2.0 × 2.2 mm footprint saves >60% board area vs. SOT23, critical for wearables and TWS earbud PCBs. |
Applications
| USB Port Polarity Protection | RF Signal Detector |
|---|---|
Use Scenario: Preventing damage from reversed USB cable insertion in portable chargers and OTG accessories. IC Role / Device Role / Timing Role: Passive polarity guard placed between VBUS and downstream DC-DC input. Use Value: 410 mV VF minimizes voltage loss; 70 V VRRM covers USB PD 3.0 transients; SOT323 fits tight connector zones. | Use Scenario: Demodulating AM signals in Bluetooth LE beacon receivers and sub-GHz ISM band sensors. IC Role / Device Role / Timing Role: Zero-bias envelope detector converting RF carrier amplitude to baseband voltage. Use Value: 2.0 pF CT and 5.0 ns trr preserve modulation fidelity up to 100 MHz; low IR avoids DC offset drift. |
| Logic-Level Clamping | High-Speed Data Line Protection |
Use Scenario: Limiting overshoot on I²C/SPI lines interfacing mixed-voltage SoCs (e.g., 1.8 V MCU ↔ 3.3 V sensor). IC Role / Device Role / Timing Role: Bidirectional voltage clamp referenced to VDD/VSS rails. Use Value: Sub-ns switching prevents data corruption; guard ring withstands ESD events per IEC 61000-4-2 Level 4. | Use Scenario: Protecting UART/RS-485 receiver inputs against induced surges in factory automation gateways. IC Role / Device Role / Timing Role: Transient voltage suppressor placed in series with signal path. Use Value: 100 nA IR ensures no measurable loading on 12 kΩ receiver impedance; 70 V rating covers common-mode spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SBAT54LT1G | Higher VF (460 mV @ 1 mA); same SOT23-3 package; 100 V VRRM. | Better suited for higher-voltage rail clamping; less optimal for low-VF signal detection. | Select when system reverse voltage exceeds 70 V but board area allows SOT23. |
| NSR0230P2T5G | Lower VF (275 mV @ 10 mA); SOD-523 package (1.2 × 0.8 mm); 30 V VRRM. | Optimized for <3.3 V logic protection; too low VRRM for 24/48 V systems. | Choose for ultra-compact, low-drop applications below 30 V with strict size constraints. |
Compared with SBAT54LT1G and NSR0230P2T5G, BAS70W-7-F uniquely balances 70 V blocking, 410 mV VF at 1 mA, and SOT323 size-making it optimal for mid-voltage signal integrity tasks where both voltage margin and low-current efficiency matter.
Availability
BAS70W-7-F is available at Aetrix Electronics and suitable for USB power interface design, RF detector circuits, logic-level clamping, and high-speed data line protection requiring stable component supply across production volumes.
Supply support for BAS70W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The BAS70W series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for signal integrity preservation in portable, wireless, and space-constrained electronic systems.
FAQ
What is the maximum junction temperature for BAS70W-7-F?
The absolute maximum junction temperature is +125 °C, with continuous operation supported from –55 °C to +125 °C ambient. Derating begins above +25 °C per the published power derating curve: at +85 °C ambient, max power dissipation drops to ~120 mW due to RθJA = 625 °C/W on standard FR-4 layout.
Is BAS70W-7-F suitable for automotive applications?
No-BAS70W-7-F is not qualified to AEC-Q101. Diodes offers the automotive-grade BAS70WQ-7-F variant, which undergoes additional stress testing and PPAP documentation. Use BAS70W-7-F only in commercial or industrial environments where AEC compliance is not required.
How does the guard ring improve reliability?
The integrated PN junction guard ring surrounds the Schottky anode periphery to distribute electric field gradients, preventing premature edge breakdown during voltage transients. This structure increases ESD robustness (HBM > 8 kV) and extends lifetime under repeated surge stress, especially in unshielded signal paths.
Can BAS70W-7-F replace BAT54S in existing designs?
Yes, with verification: both are dual-common-cathode Schottky diodes in SOT323, but BAS70W-7-F has lower VF (410 mV vs. ~450 mV), tighter IR spec (100 nA vs. 500 nA), and faster trr (5.0 ns vs. 5.5 ns). Layout compatibility is confirmed; electrical improvements may require minor signal threshold recalibration.
BAS70W-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
- Operating Temperature - Junction:
- -55°C ~ 125°C
BAS70W-7-F FAQ
1.How can I place an order for BAS70W-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70W-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70W-7-F reliable?
The price and inventory of BAS70W-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70W-7-F is usually 5 days.
3.What payment methods are accepted for BAS70W-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70W-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70W-7-F?
BAS70W-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70W-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70W-7-F?
For technical support, including BAS70W-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70W-7-F requirements.
6.How does Aetrix verify that BAS70W-7-F is sourced from the original manufacturer or authorized distributors?
All BAS70W-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70W-7-F meets industry standards.
7.What is the process for return or replacement of BAS70W-7-F?
All BAS70W-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS70W-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70W-7-F part is unused and in its original packaging.
Return procedure for BAS70W-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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