Nexperia USA Inc. BAS70WF

Overview

BAS70WF from Nexperia is a general-purpose Schottky diode in SOT323 (SC-70) package, designed for ultra-high-speed switching and voltage clamping. It delivers 70 mA forward current, 410 mV forward voltage at 1 mA, 70 V reverse voltage rating, and 2 pF junction capacitance at 0 V - enabling low-loss signal routing in compact DC-DC converters and ESD-protected I/O interfaces.

For engineers reviewing the BAS70WF datasheet, BAS70WF pinout, BAS70WF application, or BAS70WF equivalent, key selection criteria include its low VF at low IF, sub-100 nA IR at 50 V, 100 mA non-repetitive surge capability, and validated performance across −40 °C to +125 °C ambient conditions in space-constrained PCB layouts.

Technical Context

The BAS70WF uses a planar Schottky barrier structure optimized for fast recovery (trr < 1 ns, inferred from high-speed switching classification and typical Schottky behavior), minimal stored charge, and stable operation under pulsed forward conditions (δ ≤ 0.02, tp ≤ 300 µs). Its 2 pF capacitance and low differential resistance (< 1 Ω at 10 mA) support RF detector and high-frequency clamp functions.

Thermal design relies on its 625 K/W junction-to-ambient resistance when mounted on standard FR4 with single-sided copper. The device operates up to 150 °C junction temperature but exhibits rising reverse leakage above 85 °C - requiring thermal derating in sustained high-V_R applications.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mount package: 3-terminal, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body, tin-plated leads, FR4-compatible footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and VS-2EDH02HM3/85A, the BAS70WF uniquely balances ultra-low capacitance, compact SC-70 packaging, and 70 V standoff - making it optimal for space-limited, high-frequency clamping where both speed and size matter.

Availability

BAS70WF is available at Aetrix Electronics and suitable for USB interface protection, RF detector front-ends, and low-power sensor biasing requiring stable component supply across production lifecycles.

Supply support for BAS70WF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.

The BAS70WF belongs to Nexperia's general-purpose Schottky diode product line, engineered for cost-sensitive, space-constrained applications demanding consistent switching speed, low leakage, and robust thermal performance in SMT assembly.

FAQ

Is BAS70WF suitable for automotive applications?

No. The BAS70WF is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or PPAP documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers. For automotive use, consider AEC-Q200-certified alternatives like PMEG2010EH,000 or NSR0230P2T5G.

What is the maximum allowable soldering temperature profile for BAS70WF?

The BAS70WF supports standard lead-free reflow per JEDEC J-STD-020: peak temperature 260 °C for ≤ 30 seconds, with ramp-up rate ≤ 3 °C/s and ramp-down rate ≤ 6 °C/s. Its SOT323 package has been validated using the footprint shown in Figure 6 of the datasheet (sot323_fr), with 0.55 mm solder paste stencil openings.

Does Pin 2 require PCB connection or grounding?

No. Pin 2 is internally not connected (n.c.), as confirmed in Table 2 of the datasheet. It must remain electrically floating on the PCB - no trace, pad, or via should connect to it. Connecting Pin 2 risks mechanical stress on the bond wire or unintended parasitic coupling in high-frequency layouts.

How does BAS70WF perform at elevated ambient temperatures?

At 125 °C ambient, reverse leakage rises to ~1 µA (per Fig. 2), and forward voltage drops by ~50 mV versus 25 °C. Derating is required: maximum continuous I_F reduces to ~45 mA to maintain T_j ≤ 150 °C given R_th(j-a) = 625 K/W. Pulse operation remains viable up to 100 mA if duty cycle stays below 2%.