STMicroelectronics BAS70WFILM

Overview

BAS70WFILM from STMicroelectronics is a 70 V, 70 mA low-capacitance Schottky diode in SOT-323 package, optimized for RF signal detection and temperature compensation circuits. It delivers 2 pF junction capacitance, 30 Ω differential forward resistance at 100 MHz, 1.5 nH series inductance, and operates up to 150 °C junction temperature - enabling high-frequency demodulation and bias stabilization in compact wireless front-ends.

For engineers reviewing the BAS70WFILM datasheet, BAS70WFILM pinout, BAS70WFILM application, or BAS70WFILM equivalent, this part is selected for ultra-low parasitic RF diode roles where sub-2 pF capacitance, <1.5 nH inductance, and fast recovery (<1 ns) are critical in 800 MHz–2.4 GHz receiver chains, antenna tuning modules, and precision RF detector designs.

Technical Context

The BAS70WFILM implements a planar Schottky barrier structure with low-resistance metal-semiconductor contact, minimizing forward voltage drop and eliminating minority-carrier storage delay. Its 70 V reverse blocking rating supports operation across cellular, ISM, and GPS band receivers without breakdown risk under transient RF envelope peaks.

Thermal design relies on its 550 °C/W junction-to-ambient thermal resistance (SOT-323, epoxy PCB), and its 100 nA reverse leakage at 50 V / 25 °C ensures stable DC bias points in temperature-compensated oscillator circuits - critical for maintaining frequency accuracy over industrial temperature ranges.

Key Specifications

Pinout & Package

SOT-323 package: 3-pin surface-mount plastic case (lead-free, RoHS-compliant), dimensions 1.8 × 1.25 × 0.95 mm (L × W × H), thermal pad layout optimized for 550 °C/W R_th(j-a) on standard FR4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-capacitance Schottky diode applications.

Compared with NSVRB70MUT5G and SKY13370-374LF, BAS70WFILM uniquely balances 2 pF capacitance, 1.5 nH inductance, and SOT-323 thermal performance - making it optimal for space-constrained, wideband RF detector designs requiring predictable single-diode behavior and industrial-grade temperature margin.

Availability

BAS70WFILM is available at Aetrix Electronics and suitable for RF signal detection, temperature-compensated oscillator biasing, and antenna tuning applications requiring stable component supply across production volumes from prototype to volume manufacturing.

Supply support for BAS70WFILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The BAS70 series belongs to ST's precision RF discrete portfolio, engineered specifically for high-frequency signal conditioning - emphasizing ultra-low parasitics, thermal robustness, and consistent performance in compact wireless infrastructure and IoT edge devices.

FAQ

What is the maximum reverse voltage rating for BAS70WFILM?

The BAS70WFILM has a repetitive peak reverse voltage (VRRM) rating of 70 V, verified per Table 2 of STMicroelectronics' Doc ID 12563 Rev 2. This rating applies at Tj = 25 °C and remains valid up to 150 °C junction temperature with appropriate derating per thermal impedance curves in Figures 9–12.

Does BAS70WFILM have a specified reverse recovery time?

Yes - the BAS70WFILM exhibits negligible reverse recovery time due to its Schottky barrier construction, with typical trr < 1 ns as implied by "negligible switching losses" and absence of minority-carrier storage in the device description (Section 1). No measured trr value is tabulated because recovery is limited only by junction capacitance discharge dynamics.

Can BAS70WFILM be used in DC-coupled RF detector circuits?

Yes - its 100 nA reverse leakage at 50 V and 25 °C (Table 4) ensures minimal DC error in zero-bias or low-bias RF detector topologies. However, leakage rises to ~10 µA at 70 V, so DC-coupled designs operating near VRRM should include series resistance to limit leakage-induced offset drift.

Is the SOT-323 package of BAS70WFILM lead-free and RoHS compliant?

Yes - the "FILM" suffix denotes STMicroelectronics' ECOPACK® lead-free, RoHS-compliant packaging. The datasheet confirms compliance with UL94 V0 flammability rating and specifies Pb-free soldering profiles with peak temperature ≤260 °C (Table 2), validated for standard reflow processes.