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Nexperia USA Inc. BAS70W-QF

Part No.:
BAS70W-QF
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAS70W-QF.pdf
Description:
BAS70W-Q/SOT323/SC-70
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,451

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Product details

Overview

BAS70W-QF from Nexperia is a general-purpose Schottky diode in SOT323 (SC-70) package, rated for 70 V reverse voltage, 70 mA forward current, and 410 mV forward voltage at 1 mA pulsed conditions; designed for ultra-high-speed switching and voltage clamping in automotive power management circuits.

For engineers reviewing the BAS70W-QF datasheet, BAS70W-QF pinout, BAS70W-QF application, or BAS70W-QF equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (625 K/W), low capacitance (2 pF), and precise terminal mapping for layout and reliability validation.

Technical Context

The BAS70W-QF implements a planar Schottky barrier structure optimized for fast recovery (sub-nanosecond switching) and low forward conduction loss. Its 70 V breakdown rating and 10 µA reverse leakage at VR = 70 V support robust voltage clamping in 12 V/24 V automotive subsystems.

Thermal design is constrained by Rth(j-a) = 625 K/W on FR4 with single-sided copper, requiring careful PCB copper area allocation. The n.c. (pin 2) terminal confirms internal isolation-no bond wire or die connection-enabling reliable 3-terminal mounting without parasitic coupling.

Key Specifications

Parameter Value and Actual Design Meaning
VR (Reverse Voltage) 70 V - Maximum DC blocking capability for 24 V automotive rail protection
IF (Forward Current) 70 mA - Continuous conduction limit for signal-level clamping and bias networks
VF (Forward Voltage) 410 mV @ 1 mA - Low conduction loss enabling efficient low-current switching paths
IR (Reverse Current) 10 µA @ 70 V - Confirmed leakage level defining off-state integrity in high-impedance nodes
Cd (Capacitance) 2 pF @ 0 V - Enables >500 MHz small-signal bandwidth in RF detector or sampling applications
Rth(j-a) 625 K/W - Thermal resistance baseline for derating above 85 °C ambient in enclosed modules

Pinout & Package

SOT323 (SC-70) plastic surface-mount package: 2.0 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, tin-plated terminations compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
1 Anode (A) Primary P-side connection; must be routed to higher potential node during forward bias
2 Not Connected (n.c.) No internal die connection; electrically isolated; may be left floating or grounded per layout needs
3 Cathode (K) N-side terminal; connects to reference or return path; carries full forward current

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive underhood and infotainment systems per stress test requirements
Low VF at low IF 410 mV @ 1 mA enables precision clamping in sensor interface and ADC reference protection
Low Cd 2 pF capacitance minimizes signal distortion in high-frequency pulse detection circuits
High VR/IF ratio 70 V / 70 mA supports wide dynamic range in transient suppression without series resistors

Applications

Automotive CAN Transceiver Protection USB Port ESD Clamping

Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in vehicle ECUs.

IC Role / Device Role / Timing Role: Fast-switching clamp limiting bus voltage excursions to ±15 V during ISO 11898-2 pulses.

Use Value: 410 mV VF ensures minimal baseline offset; 2 pF Cd avoids signal edge degradation at 1 Mbps CAN FD rates.

Use Scenario: I/O line protection for USB 2.0 data pairs against human-body-model ESD events.

IC Role / Device Role / Timing Role: Low-capacitance shunt diode diverting 8 kV contact discharge energy to ground.

Use Value: 10 µA IR at 70 V prevents leakage-induced data corruption; SOT323 footprint fits tight 0.5 mm pitch routing.

Low-Power Sensor Bias Network RF Detector Input Stage

Use Scenario: Precision biasing of MEMS pressure sensor bridges in tire pressure monitoring systems.

IC Role / Device Role / Timing Role: Reverse-biased clamp preventing overvoltage damage during cold-cranking transients.

Use Value: 70 V VR withstands 40 V load-dump spikes; 625 K/W Rth(j-a) allows operation up to 125 °C junction temperature.

Use Scenario: Demodulation front-end in 2.4 GHz ISM-band RF power detectors.

IC Role / Device Role / Timing Role: Zero-bias Schottky detector converting RF envelope to DC voltage.

Use Value: 2 pF Cd enables >1 GHz response; 410 mV VF sets accurate threshold for logarithmic detection scaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSR0230HT1G 30 V VR, 200 mA IF, VF = 450 mV @ 10 mA - lower voltage rating but higher current capacity Not suitable for 70 V clamping; preferred in 5 V logic-level protection where higher IF is needed Select when system max voltage ≤ 30 V and peak current exceeds 70 mA
Vishay VS-2EDH01HM3/85A 100 V VR, 100 mA IF, VF = 550 mV @ 10 mA - higher voltage margin but 34% higher VF Acceptable for 70 V clamping with added safety margin; higher VF increases conduction loss in low-power nodes Choose when extended VR margin is prioritized over minimal forward loss

Compared with BAS70W-QF, NSR0230HT1G trades voltage headroom for current drive, while VS-2EDH01HM3/85A sacrifices forward efficiency for enhanced breakdown safety-making BAS70W-QF optimal for balanced 70 V, low-leakage, high-speed automotive signal protection.

Availability

BAS70W-QF is available at Aetrix Electronics and suitable for automotive ECU protection, USB interface clamping, low-power sensor biasing, and RF detector front-ends requiring stable component supply across production lifecycles.

Supply support for BAS70W-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

The BAS70W-QF belongs to Nexperia's AEC-Q101-qualified Schottky diode product line, engineered specifically for signal integrity and transient resilience in automotive power and communication subsystems.

FAQ

Is BAS70W-QF pin-compatible with BAS70-04W?

No. BAS70W-QF has three terminals (A–n.c.–K) in SOT323, while BAS70-04W is a dual-diode SOT363 package with six pins and shared cathodes. Pin count, pinout, and internal configuration differ fundamentally-PCB layout and schematic symbols are not interchangeable.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C per IEC 60134 limiting values. For continuous DC operation at 70 mA, thermal design must ensure Tj remains ≤150 °C using Rth(j-a) = 625 K/W and ambient derating-typically limiting sustained power dissipation to <112 mW at Tamb = 85 °C.

Does the n.c. pin require grounding or can it remain unconnected?

Pin 2 is internally not connected-no bond wire or die attachment exists. It may be left floating, grounded, or tied to adjacent copper pour without electrical impact. Grounding is permissible for mechanical stability or EMI shielding but adds no functional benefit.

How does BAS70W-QF perform under repetitive 100 mA surge conditions?

Per Table 5, IFSM (non-repetitive peak forward current) is 100 mA for tp ≤ 10 ms. Repetitive surges at this level exceed IFRM = 70 mA and risk cumulative thermal stress. For ≥1 Hz repetition, average power must stay within 70 mA DC limits or use active thermal management.

BAS70W-QF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 70 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323
Operating Temperature - Junction:
150°C

BAS70W-QF FAQ

1.How can I place an order for BAS70W-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70W-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70W-QF reliable?

The price and inventory of BAS70W-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70W-QF is usually 5 days.

3.What payment methods are accepted for BAS70W-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70W-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70W-QF?

BAS70W-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70W-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70W-QF?

For technical support, including BAS70W-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70W-QF requirements.

6.How does Aetrix verify that BAS70W-QF is sourced from the original manufacturer or authorized distributors?

All BAS70W-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70W-QF meets industry standards.

7.What is the process for return or replacement of BAS70W-QF?

All BAS70W-QF units undergo pre-shipment inspection (PSI). If there is an issue with BAS70W-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70W-QF part is unused and in its original packaging.

Return procedure for BAS70W-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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