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Nexperia USA Inc. BAS85,115
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- Part No.:
- BAS85,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- DO-213AC, MINI-MELF, SOD-80
- Datasheet:
-
BAS85,115.pdf
- Description:
- DIODE SCHOT 30V 200MA LLDS
- Quantity:
- Payment:
- Shipping:
Inventory:5,228
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAS85,115 from Nexperia is a planar Schottky barrier diode with integrated guard ring for stress protection, housed in a hermetically sealed glass SOD80C surface-mount package. It delivers 30 V reverse voltage rating, 200 mA forward current capability, and 800 mV forward voltage at 100 mA - enabling ultra-high-speed switching in low-voltage signal path protection circuits.
For engineers reviewing the BAS85,115 datasheet, BAS85,115 pinout, BAS85,115 application, or BAS85,115 equivalent, this discrete Schottky diode is selected for its low VF, high VR, hermetic reliability, and compatibility with automated placement and immersion soldering processes in space-constrained PCB designs.
Technical Context
The BAS85,115 implements a planar Schottky junction architecture with an integrated guard ring to suppress edge breakdown and improve ruggedness under transient overvoltage stress. Its hermetically sealed glass SOD80C package ensures long-term stability in humid or corrosive environments without encapsulant-induced parameter drift.
Thermal resistance from junction to ambient is 320 K/W on standard FR4 PCB (single-sided copper), and diode capacitance remains low at 10 pF at 1 V reverse bias and 1 MHz - supporting high-frequency clamping and RF signal blocking applications up to ~100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V - supports clamping and blocking in 24 V industrial control and 5–12 V logic-level protection circuits without avalanche risk. |
| Forward Current (IF) | 200 mA continuous - sufficient for signal-level rectification and low-power rail steering in portable and sensor interface designs. |
| Forward Voltage (VF) | 800 mV @ 100 mA - minimizes conduction loss in high-efficiency DC-DC feedback paths and fast-switching clamp networks. |
| Reverse Leakage (IR) | 2.3 μA @ 25 V - enables stable voltage reference hold and low-current sensing integrity in battery-backed systems. |
| Diode Capacitance (Cd) | 10 pF @ 1 V, 1 MHz - preserves signal edge fidelity in <100 MHz digital timing and ESD protection shunt paths. |
| Junction Temp (Tj) | 125 °C max - allows operation in extended-temperature industrial enclosures without derating below full current rating. |
Pinout & Package
Package: Hermetically sealed glass SOD80C surface-mount package (3.3–3.7 mm length × 1.45–1.60 mm width × 0.3 mm height), tin-plated metal discs at both ends for reliable reflow and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node during reverse bias; marked by band on glass body; carries return current in clamping and steering configurations. |
| 2 | Anode | Connected to lower-potential node; serves as input for forward conduction path in protection and blocking topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Guard-ring protected junction | Suppresses premature edge breakdown under repetitive voltage transients, extending lifetime in surge-prone I/O protection circuits. |
| Hermetically sealed glass package | Eliminates moisture ingress and intermetallic degradation, ensuring parametric stability over 10+ years in unsealed industrial environments. |
| Low VF at low IF | 240 mV @ 0.1 mA enables precise low-current voltage clamping in analog sensor front-ends and reference bias networks. |
| High VR/IF ratio | 30 V / 200 mA rating provides margin for 24 V system transients while maintaining compact size - critical for dense layout in PLC I/O modules. |
Applications
| Industrial Sensor Protection | USB Port ESD Clamping |
|---|---|
Use Scenario: Protecting 4–20 mA current-loop sensors from induced surges in factory-floor wiring harnesses. IC Role / Device Role / Timing Role: Discrete Schottky diode used as bidirectional voltage clamp between signal line and ground, leveraging low VF and fast recovery. Use Value: Prevents op-amp input damage during 1 kV EFT bursts while adding <1 ns propagation delay due to sub-10 pF capacitance. |
Use Scenario: Shunting ESD strikes on USB D+/D− lines before they reach the USB transceiver IC. IC Role / Device Role / Timing Role: Low-capacitance Schottky placed in series with TVS diodes to reduce leakage and improve signal integrity at 480 Mbps. Use Value: 10 pF capacitance avoids USB 2.0 eye diagram closure; 800 mV VF ensures minimal DC offset in differential signaling. |
| DC-DC Feedback Path Steering | Logic-Level Signal Blocking |
Use Scenario: Isolating multiple voltage rails feeding into a shared feedback node of a multi-output buck controller. IC Role / Device Role / Timing Role: Schottky used as OR-ing diode to prevent backfeed and enable seamless rail switchover without MOSFET gate drive complexity. Use Value: 200 mA rating handles typical feedback current (<1 mA) with >200× margin; 800 mV drop introduces negligible error in 0.6 V reference paths. |
Use Scenario: Blocking reverse current between mixed-voltage logic domains (e.g., 3.3 V MCU I/O driving 5 V peripheral reset line). IC Role / Device Role / Timing Role: Unidirectional blocking diode inserted in reset or enable line to enforce voltage domain isolation. Use Value: 30 V VR withstands 5 V rail overshoots; 2.3 μA IR prevents measurable leakage across 100 kΩ pull-up networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711 | Higher VF (950 mV @ 100 mA), larger DO-35 glass package (5.2 mm length), no guard ring | Less suitable for automated SMT assembly; lower surge robustness in repeated ESD events | Select only when through-hole mounting is required and board space is unconstrained |
| RB520S-30T1G | Lower VR (30 V same), but higher IF (300 mA), smaller SOD-523 package (1.2 × 0.8 mm), no hermetic seal | Higher current capacity but reduced humidity reliability; not rated for immersion soldering | Prefer for high-density portable designs where moisture exposure is controlled and volume production uses reflow only |
Compared with 1N5711 and RB520S-30T1G, BAS85,115 uniquely balances hermetic reliability, guard-ring ruggedness, and SMT compatibility - making it optimal for industrial field equipment requiring long-term parametric stability under thermal cycling and humidity.
Availability
BAS85,115 is available at Aetrix Electronics and suitable for industrial sensor protection, USB port ESD clamping, and DC-DC feedback path steering requiring stable component supply across multi-year production cycles.
Supply support for BAS85,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BAS85,115 belongs to Nexperia's general-purpose Schottky diode product line, engineered for robust signal-level protection and switching in cost-sensitive, high-reliability industrial and communications equipment.
FAQ
Is BAS85,115 suitable for reflow soldering?
Yes. The SOD80C package is qualified for standard lead-free reflow profiles per J-STD-020, including peak temperatures up to 260 °C. Its tin-plated metal terminations ensure wetting reliability, and the hermetic glass body prevents internal delamination during thermal cycling.
What is the meaning of the marking band on BAS85,115?
The black marking band on the glass body identifies Pin 1 as the cathode terminal. This polarity marking is laser-permanent and visible under 10× magnification, enabling automated optical inspection (AOI) verification during SMT assembly.
How does the guard ring improve performance in protection circuits?
The integrated guard ring redistributes electric field concentration at the silicon edge, raising the effective breakdown voltage by ~25 % compared to non-guarded equivalents. This extends operational life under repetitive 100 V/μs transients common in motor drive I/O stages.
Can BAS85,115 replace BAT54 in existing designs?
No - BAT54 is a dual-series Schottky in SOT-23 with different pinout, thermal resistance, and capacitance (12 pF). BAS85,115 is single-diode, SOD80C, 10 pF, and optimized for higher VR/IF ratio and hermetic reliability, not direct substitution.
BAS85,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- DO-213AC, MINI-MELF, SOD-80
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 2.3 µA @ 25 V
- Capacitance @ Vr, F:
- 10pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LLDS; MiniMelf
- Operating Temperature - Junction:
- 125°C (Max)
BAS85,115 FAQ
1.How can I place an order for BAS85,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS85,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS85,115 reliable?
The price and inventory of BAS85,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS85,115 is usually 5 days.
3.What payment methods are accepted for BAS85,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS85,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS85,115?
BAS85,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS85,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS85,115?
For technical support, including BAS85,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS85,115 requirements.
6.How does Aetrix verify that BAS85,115 is sourced from the original manufacturer or authorized distributors?
All BAS85,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS85,115 meets industry standards.
7.What is the process for return or replacement of BAS85,115?
All BAS85,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS85,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS85,115 part is unused and in its original packaging.
Return procedure for BAS85,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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