STMicroelectronics BAT30AFILM

Overview

BAT30AFILM from STMicroelectronics is a 30 V, 300 mA common-anode dual Schottky diode in SOT-23 package, optimized for low-loss switching in DC-DC converters and reverse polarity protection circuits. It delivers 530 mV forward voltage at 300 mA (Tj = 25 °C), 14 pF capacitance at VR = 1 V, and supports junction temperatures up to 150 °C.

For engineers reviewing the BAT30AFILM datasheet, BAT30AFILM pinout, BAT30AFILM application, or BAT30AFILM equivalent, key selection criteria include its dual common-anode configuration, low VF/low C trade-off, thermal resistance of 500 °C/W (SOT-23 on epoxy PCB), and suitability for space-constrained high-frequency switching designs.

Technical Context

The BAT30AFILM integrates two Schottky barrier diodes sharing a single anode terminal, enabling compact dual-path rectification or OR-ing functionality without external node tying. Its low 0.53 V forward drop at rated current minimizes conduction loss in 3.3 V–12 V rail applications.

With typical junction capacitance of 14 pF at 1 V reverse bias and negligible reverse recovery time, it supports clean switching up to ~100 MHz in flyback snubbers and synchronous rectifier auxiliary paths. The device operates reliably across –65 °C to +150 °C ambient, with thermal impedance validated per JEDEC JESD51-14 for SOT-23 mounting.

Key Specifications

Pinout & Package

SOT-23 package: 3-terminal plastic surface-mount package with gull-wing leads, RoHS-compliant, ECOPACK® certified, footprint per Figure 19 (Doc ID 12564 Rev 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky diode applications.

Compared with DMN2011UFD-7 and RB050M-30, BAT30AFILM offers the only monolithic common-anode dual Schottky in SOT-23 with verified 300 mA per diode rating, 14 pF capacitance, and 500 °C/W thermal resistance-making it optimal for space-limited, high-frequency, low-voltage OR-ing and rectification where simplicity and predictability are critical.

Availability

BAT30AFILM is available at Aetrix Electronics and suitable for DC-DC converter catch diodes, reverse polarity protection circuits, and dual-rail power OR-ing applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for BAT30AFILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensing solutions for industrial, automotive, and consumer markets.

BAT30AFILM belongs to ST's small-signal Schottky diode product line, engineered specifically for high-efficiency, high-frequency switching applications where low forward voltage, fast recovery, and minimal parasitic capacitance are essential.

FAQ

What is the maximum continuous current per diode in BAT30AFILM?

The BAT30AFILM is rated for 300 mA continuous forward current per diode at Tj = 25 °C with derating above 25 °C ambient per Figure 2 (derating curve). At 70 °C ambient, maximum continuous current drops to approximately 220 mA due to thermal resistance of 500 °C/W on standard FR4 PCB.

Does BAT30AFILM support reflow soldering per JEDEC J-STD-020?

Yes-BAT30AFILM is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C (TL) for 10 seconds. Its ECOPACK® packaging meets MSL1 classification, eliminating moisture sensitivity concerns and pre-bake requirements.

Can BAT30AFILM be used in place of BAT30CFILM in a common-cathode design?

No-BAT30AFILM has a common-anode configuration (Pin 1 = anode, Pins 2 & 3 = cathodes), while BAT30CFILM is common-cathode (Pin 3 = cathode, Pins 1 & 2 = anodes). Swapping them would reverse conduction direction and cause circuit failure unless board layout and netlist are redesigned.

What is the typical reverse leakage current at 25 V reverse bias and 85 °C junction temperature?

Per Table 4, reverse leakage current (IR) is 18–50 µA at VR = 10 V and Tj = 85 °C. Extrapolating using Figure 11's relative IR curve, IR at VR = 25 V and Tj = 85 °C is approximately 120–200 µA-well within safe operating limits for most low-power applications but critical for battery leakage budgets.