STMicroelectronics BAT41AWFILM

Overview

BAT41AWFILM from STMicroelectronics is a 100 V, 200 mA common-anode dual Schottky diode in SOT-323 package, featuring 3 pF typical junction capacitance, <1 µA reverse leakage at 50 V/25 °C, and 450 mV forward voltage at 1 mA - optimized for high-frequency switching in low-loss DC-DC converters and RF detector circuits.

For engineers reviewing the BAT41AWFILM datasheet, BAT41AWFILM pinout, BAT41AWFILM application, or BAT41AWFILM equivalent, this part is selected for ultra-low capacitance signal routing, fast recovery timing-critical clamping, and space-constrained dual-diode configurations requiring matched thermal and electrical behavior.

Technical Context

The BAT41AWFILM integrates two Schottky barrier diodes sharing a single anode terminal, enabling bidirectional clamping or dual-path rectification with matched dynamic characteristics. Its 3 pF capacitance and sub-10 ns reverse recovery support >100 MHz operation in RF envelope detection and high-speed logic level translation.

Designed for surface-mount use on epoxy FR4 PCBs with recommended pad layout, it sustains 150 °C junction temperature and delivers 550 °C/W junction-to-ambient thermal resistance - critical for thermally dense power management subsystems where IR loss minimization is mandatory.

Key Specifications

Pinout & Package

Package: SOT-323 - 3-terminal plastic surface-mount package (1.8–2.2 mm × 1.15–1.35 mm × 1.8–2.4 mm), lead-free, RoHS-compliant, ECOPACK® certified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky diode applications.

Compared with NSR20F30NXT5G and CMKD7002K, BAT41AWFILM uniquely balances 100 V standoff, 3 pF capacitance, and matched dual-diode topology - making it irreplaceable in RF detector front-ends and high-voltage, low-leakage dual-path bias networks where passive simplicity and frequency response are non-negotiable.

Availability

BAT41AWFILM is available at Aetrix Electronics and suitable for RF envelope detection, USB data line protection, and dual-path power OR-ing requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle continuity.

Supply support for BAT41AWFILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, analog components, and discrete devices for industrial, automotive, and consumer markets.

The BAT41 series belongs to ST's low-capacitance Schottky diode product line, engineered specifically for high-frequency signal integrity and minimal switching loss in space-constrained, thermally demanding applications like portable RF systems and precision sensor interfaces.

FAQ

What is the maximum continuous forward current per diode in BAT41AWFILM?

The BAT41AWFILM is rated for 200 mA continuous forward current total - shared across both diodes in common-anode configuration. Each diode handles up to 200 mA individually when used singly, but simultaneous conduction must remain within 200 mA aggregate to avoid exceeding thermal limits specified in Table 2 of the datasheet.

Does BAT41AWFILM support reflow soldering per JEDEC J-STD-020?

Yes - BAT41AWFILM uses a lead-free, RoHS-compliant SOT-323 package qualified for standard Pb-free reflow profiles, including peak temperatures up to 260 °C for 30 seconds. The device meets JEDEC J-STD-020 moisture sensitivity level MSL3 and requires no pre-bake if stored per manufacturer humidity guidelines.

Can BAT41AWFILM replace BAT54AW in existing designs?

No - BAT54AW has 30 V VRRM and 240 mA IF, while BAT41AWFILM offers 100 V VRRM and 200 mA IF. Though both are common-anode SOT-323 Schottky diodes, the higher reverse voltage rating of BAT41AWFILM makes it unsuitable as a drop-in replacement where circuit stress remains below 30 V; substituting may cause excessive forward drop and thermal rise due to differing VF curves.

Is the junction capacitance of BAT41AWFILM measured at zero bias?

No - the 3 pF typical junction capacitance is measured at VR = 1 V and f = 1 MHz, per Table 5 of the datasheet. Capacitance decreases with increasing reverse bias; at VR = 10 V, typical C drops to ~1.5 pF. This bias-dependent behavior is critical for tuning RF matching networks and must be modeled accordingly in simulation.