Diodes Incorporated BAT43WS-7

Overview

BAT43WS-7 from Diodes Incorporated is a surface-mount Schottky barrier diode in SOD323 package, rated for 30 V peak reverse voltage and 200 mA continuous forward current, with ultra-low 0.26–0.33 V forward voltage at 2.0 mA - optimized for low-power signal rectification and reverse polarity protection in space-constrained portable electronics.

For engineers reviewing the BAT43WS-7 datasheet, BAT43WS-7 pinout, BAT43WS-7 application, or BAT43WS-7 equivalent, key selection criteria include its 5 ns reverse recovery time, 10 pF junction capacitance at 1 V, 625 °C/W thermal resistance, and AEC-Q101 readiness for automotive-grade reliability validation.

Technical Context

This Schottky diode leverages a metal-semiconductor junction to achieve fast switching (t_RR ≤ 5.0 ns) and minimal conduction loss, with VF as low as 0.26 V at 2.0 mA - critical for battery-powered systems where voltage headroom is limited. Its 30 V V_RRM and 4.0 A non-repetitive surge rating support transient-tolerant input protection.

The SOD323 package enables high-density PCB layouts while maintaining thermal performance (R_θJA = 625 °C/W on FR4), and its cathode-band polarity marking ensures unambiguous orientation during automated assembly. Moisture sensitivity level 1 allows standard reflow without baking.

Key Specifications

Pinout & Package

Package: SOD323 - ultra-small plastic surface-mount package (1.30 × 1.70 × 0.95 mm), matte tin-plated terminals, cathode band marking, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54DW-7-F and NSR0230HT1G, BAT43WS-7 delivers the lowest forward voltage at microamp-to-milliamp bias levels - making it optimal for always-on, battery-sensitive applications where sub-0.3 V drop directly extends operational lifetime.

Availability

BAT43WS-7 is available at Aetrix Electronics and suitable for USB port protection, low-power sensor biasing, RF detector clamping, and automotive LIN bus interface requiring stable component supply across industrial, medical, and consumer production programs.

Supply support for BAT43WS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The BAT4xWS series targets space-constrained, low-voltage applications demanding ultra-low VF and fast switching - designed specifically for portable electronics, wearables, and automotive body electronics where size, efficiency, and qualification rigor are critical.

FAQ

What is the maximum junction temperature for BAT43WS-7?

The BAT43WS-7 has an operating junction temperature range of –55 °C to +125 °C. Its absolute maximum T_J is 125 °C, and thermal derating begins above 25 °C ambient per the forward current derating curve - at 125 °C ambient, continuous I_F must be reduced to zero due to R_θJA = 625 °C/W on standard FR4.

Is BAT43WS-7 qualified for automotive use?

Yes - BAT43WS-7 is manufactured in IATF 16949-certified facilities and meets AEC-Q101 stress test requirements for discrete semiconductors. It supports PPAP documentation and change-controlled automotive programs, though final qualification must be confirmed with Diodes Incorporated for specific part lot and application context.

How does BAT43WS-7 differ from BAT42WS-7?

BAT43WS-7 has a lower forward voltage: 0.26–0.33 V at 2.0 mA versus BAT42WS-7's 0.40–0.65 V at 10 mA. Both share identical V_RRM (30 V), package (SOD323), and thermal specs, but BAT43WS-7 is optimized for ultra-low-current biasing where every millivolt matters - such as in micropower sensor wake-up circuits.

Can BAT43WS-7 be used in place of a general-purpose silicon diode?

Yes, but only where low VF and fast switching are required - not as a direct replacement for 1N4148 in high-voltage (>30 V) or high-current (>200 mA) roles. Its 30 V V_RRM and 200 mA I_F limit applicability; however, its 5 ns t_RR and sub-0.33 V VF make it superior for low-voltage signal steering, reverse polarity protection, and RF clamping where silicon diodes introduce excessive loss or delay.