Diodes Incorporated BAT54-7-F

Overview

BAT54-7-F from Diodes Incorporated is a 30 V, 200 mA surface-mount Schottky barrier diode in SOT23 package, featuring 0.8 V max forward voltage at 100 mA, 2 µA max reverse leakage at 25 V, and 5 ns reverse recovery time; used for polarity protection and high-frequency clamping in USB port circuits.

For engineers reviewing the BAT54-7-F datasheet, BAT54-7-F pinout, BAT54-7-F application, or BAT54-7-F equivalent, key selection criteria include low VF for power-sensitive rail clamping, fast tRR for signal integrity in 10–100 MHz digital interfaces, guard-ring ESD robustness per IEC 61000-4-2 Level 4, and SOT23 thermal performance under 200 mW PD limits.

Technical Context

This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve sub-0.4 V turn-on at low currents and maintain <0.8 V VF up to 100 mA. Its PN junction guard ring structure provides defined edge termination for transient voltage suppression without compromising switching speed.

The device operates across –65 °C to +150 °C with RθJA = 500 °C/W on FR-4 board, and exhibits 10 pF total capacitance at 1 V reverse bias-critical for minimizing loading in RF detector and high-speed logic clamp applications.

Key Specifications

Pinout & Package

Package: SOT23 (Standard), 3-terminal plastic surface-mount package with matte tin-plated alloy 42 leadframe; dimensions 2.90 × 1.30 × 1.03 mm (L × W × H), weight ≈ 0.008 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and BAT54WS-7-F, BAT54-7-F offers balanced VF/C_T trade-off and JEDEC-qualified reliability without wettable flanks or ultra-low-VF optimization-making it optimal for industrial USB hubs and general-purpose clamping where cost and qualification depth are prioritized.

Availability

BAT54-7-F is available at Aetrix Electronics and suitable for USB port protection, logic-level clamping, DC power rail protection, and RF detector biasing requiring stable component supply across industrial, computing, and consumer electronics programs.

Supply support for BAT54-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAT54 series belongs to Diodes' high-reliability Schottky diode product line, engineered specifically for ESD-hardened signal integrity and low-loss power routing in space-constrained portable and interface applications.

FAQ

What is the maximum junction temperature for BAT54-7-F during continuous operation?

The absolute maximum junction temperature is +150 °C. With RθJA = 500 °C/W on standard FR-4 board, sustained 200 mA conduction at 0.8 V VF generates 160 mW, raising T_J by 80 °C above ambient-so operation remains safe up to +70 °C ambient. Derating begins linearly beyond that point per Figure 4 in DS11005.

Does BAT54-7-F meet automotive qualification standards?

BAT54-7-F is qualified to JEDEC standards referenced in AEC-Q200 for temperature cycling, humidity, and mechanical stress-but it is not an automotive-grade part. For automotive applications, Diodes specifies the BAT54Q series, which undergoes additional AEC-Q101 testing and has separate qualification documentation.

Can BAT54-7-F replace BAT54C-7-F in a circuit?

No-BAT54-7-F is the single-diode configuration (anode-cathode-no-connect), while BAT54C-7-F is a dual-common-cathode variant. Swapping them would break circuit functionality unless the schematic explicitly uses only one diode section of the dual package. Pin 3 is NC in BAT54-7-F but cathode-connected in BAT54C-7-F.

How does the PN junction guard ring improve ESD performance?

The guard ring surrounds the active Schottky junction with a reverse-biased PN structure that distributes ESD current laterally across the silicon surface, preventing localized thermal runaway. This enables the device to withstand ±8 kV contact discharge (IEC 61000-4-2) without external TVS components while maintaining 5 ns t_RR.