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Nexperia USA Inc. BAT54AW,115
- Part No.:
- BAT54AW,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT54AW,115.pdf
- Description:
- DIODE ARR SCHOT 30V 200MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:77,522
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Product details
Overview
BAT54AW,115 from Nexperia is a dual common-anode Schottky barrier diode in SOT323 (SC-70) package, featuring 30 V reverse voltage rating, ≤800 mV forward voltage at 100 mA, 2 µA reverse leakage at 25 V, 10 pF capacitance at 1 V, and 5 ns reverse recovery time - optimized for ultra-high-speed switching and reverse polarity protection in space-constrained portable electronics.
For engineers reviewing the BAT54AW,115 datasheet, BAT54AW,115 pinout, BAT54AW,115 application, or BAT54AW,115 equivalent, key selection criteria include low VF for power-sensitive bias networks, sub-10 pF junction capacitance for RF line termination, fast trr for signal integrity in high-frequency data paths, and dual-diode common-anode topology for compact dual-rail clamping.
Technical Context
The BAT54AW,115 integrates two independent Schottky diodes sharing a common anode terminal (Pin 3), enabling bidirectional clamping or dual-rail protection from a single 3-pin SMD footprint. Its planar structure includes a guard ring for enhanced ESD and transient stress resilience.
Designed for operation up to 150 °C junction temperature with 625 K/W junction-to-ambient thermal resistance on FR4 PCB, it supports continuous forward current up to 200 mA per diode and peak surge current up to 600 mA (non-repetitive), making it suitable for intermittent load-switching and transient suppression in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V maximum - supports 24 V rail clamping and 5 V/3.3 V system-level overvoltage protection without breakdown. |
| Forward Voltage (VF) | 800 mV max at 100 mA - minimizes conduction loss in low-voltage bias and level-shift circuits. |
| Reverse Leakage (IR) | 2 µA max at 25 V - ensures negligible standby current in always-on protection paths. |
| Junction Capacitance (Cd) | 10 pF at 1 V, 1 MHz - preserves signal integrity in USB 2.0, I²C, and low-speed serial line termination. |
| Reverse Recovery Time (trr) | 5 ns typical - enables clean switching in >100 MHz digital signal routing and ESD clamp response. |
| Thermal Resistance (Rth(j-a)) | 625 K/W on FR4 - defines derating curve for sustained 200 mA operation in ambient up to 85 °C. |
| Package | SOT323 (SC-70), 2.0 × 1.25 × 0.95 mm - compatible with 0.65 mm pitch reflow footprints and automated pick-and-place. |
Pinout & Package
SOT323 (SC-70) plastic surface-mount package with 3 leads, 1.3 mm pitch, and standard FR4-compatible footprint per Figure 6 of Nexperia's datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 | Cathode of Diode 1 - connects to protected node requiring clamping or polarity reversal blocking. |
| 2 | K2 | Cathode of Diode 2 - enables independent clamping of second rail or signal path using shared anode. |
| 3 | A1, A2 | Common anode - ties both diodes to positive supply or reference voltage, simplifying dual-rail protection layout. |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring integration | Enhances robustness against ESD and localized avalanche stress without increasing VF or Cd. |
| Low forward voltage | ≤800 mV at 100 mA enables efficient clamping in 1.8–3.3 V logic domains with minimal voltage drop. |
| Ultra-low capacitance | 10 pF at 1 V allows use in 100+ MHz signal lines without measurable rise-time degradation. |
| Fast reverse recovery | 5 ns trr ensures minimal tail current during signal transitions, reducing cross-talk in multi-channel interfaces. |
Applications
| USB 2.0 Data Line Protection | Low-Voltage Microcontroller I/O Clamping |
|---|---|
Use Scenario: Protecting D+ and D− lines from ESD events and overvoltage transients in portable USB peripherals. IC Role / Device Role / Timing Role: Dual Schottky clamp with common anode tied to 3.3 V supply, limiting voltage excursions to <0.3 V above VCC or below GND. Use Value: Prevents damage to PHY transceivers while maintaining signal integrity up to 480 Mbps due to 10 pF capacitance and 5 ns trr. | Use Scenario: Safeguarding GPIO pins of ARM Cortex-M microcontrollers against accidental reverse connection or hot-plug surges. IC Role / Device Role / Timing Role: Reverse polarity protection diode pair, with cathodes connected to I/O pins and common anode to VDD. Use Value: Blocks reverse current flow with only 800 mV forward drop, preserving system startup behavior and eliminating need for discrete series FETs. |
| LVDS Receiver Input Protection | DC-DC Converter Feedback Path Clamp |
Use Scenario: Limiting differential input voltage swing at LVDS receiver inputs exposed to cable-induced transients. IC Role / Device Role / Timing Role: Bidirectional clamping device across differential pair, with each cathode connected to one line and common anode to mid-point bias. Use Value: Maintains common-mode range stability under ±15 V transients while adding <0.5 ps jitter due to sub-5 ns trr. | Use Scenario: Preventing op-amp saturation in feedback loops of buck converters during output short-circuit or startup overshoot. IC Role / Device Role / Timing Role: Fast clamp between FB node and VREF, conducting excess current before error amplifier saturates. Use Value: Enables stable regulation recovery within 2 µs after fault removal, leveraging 600 mA non-repetitive surge capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual common-anode Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | Single diode, SOD-523, 30 V VR, 420 mV VF @ 100 mA, 1.5 pF Cd | Not dual; requires two devices for same function; lower capacitance but no common-anode integration | Select when ultra-low Cd (<2 pF) is prioritized over board area and dual functionality. |
| Vishay SD103AWS-TP | Dual common-anode, SOT-323, 40 V VR, 600 mV VF @ 100 mA, 30 pF Cd, 5 ns trr | Higher VR and lower VF but triple the junction capacitance - unsuitable for >50 MHz signals | Select when higher reverse voltage margin is required and signal bandwidth is ≤20 MHz. |
Compared with NSR0230HT1G and SD103AWS-TP, BAT54AW,115 uniquely balances dual-diode integration, 10 pF capacitance, and 30 V rating - making it optimal for compact, high-speed clamping where board space and signal fidelity are jointly constrained.
Availability
BAT54AW,115 is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O safeguarding, and DC-DC converter feedback clamping requiring stable component supply and consistent SOT323 packaging.
Supply support for BAT54AW,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.
The BAT54AW,115 belongs to Nexperia's Schottky diode portfolio designed specifically for space-constrained, high-speed signal integrity and power rail protection in consumer, computing, and industrial electronics.
FAQ
What is the maximum continuous forward current per diode in BAT54AW,115?
The BAT54AW,115 supports 200 mA continuous forward current per diode at Tamb ≤ 25 °C with derating above that ambient temperature. This rating assumes mounting on FR4 PCB with single-sided copper and standard footprint per Nexperia's thermal characterization data.
Can BAT54AW,115 be used for automotive applications?
No - BAT54AW,115 is explicitly marked as non-automotive qualified in its revision history. It lacks AEC-Q101 qualification and has not undergone automotive-grade stress testing. For automotive use, Nexperia offers the BAT54AW-Q variant with full AEC-Q101 certification.
How does the guard ring affect electrical performance?
The integrated guard ring improves ruggedness against ESD and localized avalanche without altering forward or reverse characteristics. It does not increase VF, IR, or Cd, but raises the effective breakdown threshold under transient conditions by distributing electric field stress across the junction edge.
Is BAT54AW,115 RoHS and REACH compliant?
Yes - BAT54AW,115 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Nexperia's official compliance documentation and product change notices dated April 2023.
BAT54AW,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 25 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAT54AW,115 FAQ
1.How can I place an order for BAT54AW,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT54AW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT54AW,115 reliable?
The price and inventory of BAT54AW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54AW,115 is usually 5 days.
3.What payment methods are accepted for BAT54AW,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54AW,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT54AW,115?
BAT54AW,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT54AW,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT54AW,115?
For technical support, including BAT54AW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54AW,115 requirements.
6.How does Aetrix verify that BAT54AW,115 is sourced from the original manufacturer or authorized distributors?
All BAT54AW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54AW,115 meets industry standards.
7.What is the process for return or replacement of BAT54AW,115?
All BAT54AW,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT54AW,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT54AW,115 part is unused and in its original packaging.
Return procedure for BAT54AW,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT54AW,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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