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Nexperia USA Inc. BAT54AWF

Part No.:
BAT54AWF
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
SC-70, SOT-323
Datasheet:
AetrixBAT54AWF.pdf
Description:
DIODE ARR SCHOT 30V 200MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,940

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Product details

Overview

BAT54AW from Nexperia is a dual common-anode Schottky barrier diode in SOT323 (SC-70) package, featuring 30 V reverse voltage rating, 800 mV max forward voltage at 100 mA, 2 µA max reverse current at 25 V, 10 pF capacitance at 1 V, and 5 ns reverse recovery time - optimized for ultra-high-speed switching and polarity protection in space-constrained interfaces.

For engineers reviewing the BAT54AW datasheet, BAT54AW pinout, BAT54AW application, or BAT54AW equivalent, key selection criteria include low VF for power-sensitive clamping, sub-10 pF junction capacitance for RF/line-termination integrity, fast trr for >100 MHz signal routing, and dual-diode common-anode topology for compact bidirectional protection schemes.

Technical Context

The BAT54AW integrates two independent Schottky diodes sharing a common anode terminal (Pin 3), enabling symmetrical clamping or reverse-polarity protection with minimal footprint. Its planar structure includes a guard ring for ESD and transient stress resilience, and it operates across −55 °C to +150 °C ambient range.

Designed for high-frequency signal path conditioning, it delivers stable VF down to 240 mV at 0.1 mA and maintains <2 µA IR up to 25 V reverse bias - critical for low-leakage bias networks and precision analog front-ends where leakage-induced offset must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)30 V maximum - supports 24 V system-level clamping with 25 % margin against transients.
Forward Voltage (VF)800 mV max at 100 mA - minimizes conduction loss in low-voltage power rail protection.
Reverse Current (IR)2 µA max at 25 V - ensures negligible leakage in high-impedance sensing or reference circuits.
Junction Capacitance (Cd)10 pF at 1 V, 1 MHz - preserves signal integrity in USB 2.0, HDMI DDC, or I²C bus termination.
Reverse Recovery Time (trr)5 ns typical - enables reliable operation in >100 MHz digital switching and RF detector applications.
Thermal Resistance (Rth(j-a))625 K/W - requires careful PCB copper area design to sustain 200 mW total dissipation at ≤25 °C ambient.

Pinout & Package

Package: SOT323 (SC-70), 3-lead surface-mount plastic package, 2.0 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
1 (K1)Cathode of Diode 1Provides dedicated cathode connection for first Schottky diode; used independently or in parallel with K2 for dual-path clamping.
2 (K2)Cathode of Diode 2Independent cathode for second diode; enables differential clamping or separate signal line protection.
3 (A1/A2)Common AnodeShared anode node simplifies PCB layout for bidirectional protection - connects directly to supply rail or reference voltage.

Key Features

FeatureDesign Value
Guard ring integrationEnhances robustness against ESD and localized junction breakdown during voltage transients.
Low forward voltageTypical VF = 320 mV at 1 mA - reduces forward drop in battery-powered signal conditioning paths.
Ultra-low capacitance10 pF at 1 V reverse bias - avoids signal distortion in high-speed data lines and RF coupling networks.
Fast switching speed5 ns trr - eliminates tail current in pulse-width modulated control signals and logic-level translators.

Applications

USB 2.0 Data Line ProtectionI²C Bus Clamping

Use Scenario: Protecting D+ and D− lines from ESD and overvoltage events in portable USB peripherals.

IC Role / Device Role / Timing Role: Dual-cathode Schottky clamp referenced to VBUS, leveraging common-anode configuration for symmetric bidirectional clamping.

Use Value: 5 ns trr prevents data corruption during hot-plug events; 10 pF Cd avoids signal rise-time degradation beyond USB 2.0's 1.5 ns requirement.

Use Scenario: Preventing bus contention and voltage overshoot on open-drain SDA/SCL lines in multi-master embedded systems.

IC Role / Device Role / Timing Role: Low-leakage voltage clamp tied to VDD, using K1/K2 for independent line protection while sharing pull-up reference via A1/A2.

Use Value: 2 µA IR at 25 V ensures <100 nA net leakage per line - preserving I²C's 3 mA sink capability and avoiding false ACK/NACK errors.

Reverse Polarity Input ProtectionRF Detector Bias Network

Use Scenario: Safeguarding DC input stages of industrial sensors or power modules against incorrect connector insertion.

IC Role / Device Role / Timing Role: Common-anode diode pair placed between input connector and LDO input, with cathodes routed to load and ground-referenced return path.

Use Value: 800 mV VF at 100 mA limits voltage drop to <0.1 V in 12 V systems - eliminating need for series MOSFETs while maintaining >99 % efficiency.

Use Scenario: Providing temperature-stable DC bias to GaAs FET detectors in 2.4 GHz ISM-band receivers.

IC Role / Device Role / Timing Role: Low-capacitance DC blocking and bias feed element integrated into matching network between antenna and detector diode.

Use Value: 10 pF Cd introduces <0.2° phase error at 2.4 GHz - preserving detector sensitivity and minimizing VSWR mismatch in narrowband front-ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NSR0230P2T5GSingle diode, same SOT-323 package, 30 V VR, 420 mV VF typ at 100 mA - lower VF but no dual-diode topology.Requires two devices for dual-line protection; lacks common-anode convenience for shared rail clamping.Select when lowest possible forward drop dominates layout density constraints.
Diodes Incorporated SD103AWS-7-FDual common-cathode configuration (not common-anode); 40 V VR, 1.2 V VF max at 200 mA - higher VF and reversed terminal mapping.Needs PCB redesign to route cathodes together; unsuitable for direct replacement in existing common-anode schematics.Choose only if higher VR margin and legacy common-cathode board reuse justify layout rework.

Compared with NSR0230P2T5G and SD103AWS-7-F, the BAT54AW uniquely balances dual-diode integration, ultra-low capacitance, and common-anode topology - making it optimal for compact, high-frequency bidirectional protection where layout efficiency and signal fidelity are co-prioritized.

Availability

BAT54AW is available at Aetrix Electronics and suitable for USB interface protection, I²C bus clamping, reverse polarity input safeguarding, and RF detector bias networks requiring stable component supply and consistent parametric performance across production batches.

Supply support for BAT54AW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient components - with leadership in logic, discrete, and MOSFET technologies serving automotive, industrial, and consumer markets.

The BAT54AW belongs to Nexperia's general-purpose Schottky diode product line, engineered for high-speed signal integrity and robust protection in miniaturized portable and IoT edge devices.

FAQ

What is the maximum continuous forward current rating for BAT54AW?

The BAT54AW is rated for 200 mA continuous forward current per diode under ambient conditions ≤25 °C with standard FR4 PCB mounting. Derating is required above 25 °C ambient, following the 625 K/W thermal resistance curve - e.g., maximum IF drops to ~120 mA at Tamb = 70 °C.

Can BAT54AW be used in automotive applications?

No - the BAT54AW is explicitly marked as non-automotive qualified in its revision history. It lacks AEC-Q101 qualification and has not undergone automotive-grade stress testing. For automotive use, Nexperia offers the BAT54AW-Q variant, which meets AEC-Q101 requirements and supports extended temperature and reliability validation.

How does the guard ring improve reliability in BAT54AW?

The integrated guard ring mitigates edge leakage and prevents premature avalanche breakdown at the silicon periphery under high electric field stress. This improves robustness against ESD events (IEC 61000-4-2 Level 4), repetitive transients, and localized thermal runaway - extending operational lifetime in noisy industrial or portable environments.

Is BAT54AW compatible with lead-free reflow soldering processes?

Yes - the BAT54AW is fully compatible with standard lead-free reflow profiles (J-STD-020 compliant), including peak temperatures up to 260 °C. Its SOT323 package uses matte tin plating and is qualified for both reflow and wave soldering, with recommended footprint dimensions published in Figures 6 and 7 of the datasheet.

BAT54AWF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io) (per Diode):
200mA (DC)
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
2 µA @ 25 V
Operating Temperature - Junction:
150°C (Max)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

BAT54AWF FAQ

1.How can I place an order for BAT54AWF through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT54AWF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT54AWF reliable?

The price and inventory of BAT54AWF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54AWF is usually 5 days.

3.What payment methods are accepted for BAT54AWF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54AWF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT54AWF?

BAT54AWF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT54AWF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT54AWF?

For technical support, including BAT54AWF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54AWF requirements.

6.How does Aetrix verify that BAT54AWF is sourced from the original manufacturer or authorized distributors?

All BAT54AWF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54AWF meets industry standards.

7.What is the process for return or replacement of BAT54AWF?

All BAT54AWF units undergo pre-shipment inspection (PSI). If there is an issue with BAT54AWF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT54AWF part is unused and in its original packaging.

Return procedure for BAT54AWF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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