Taiwan Semiconductor Corporation BAT54CW RF

Overview

BAT54CW RF from Taiwan Semiconductor is a 30 V, 200 mA Schottky barrier diode in SOT-323 package, featuring 5 ns reverse recovery time, 10 pF junction capacitance at 1 V, and low forward voltage (≤500 mV at 30 mA), used for ultra-high-speed switching and voltage clamping in portable power management circuits.

For engineers reviewing the BAT54CW RF datasheet, BAT54CW RF pinout, BAT54CW RF application, or BAT54CW RF equivalent, key selection criteria include reverse recovery time, forward voltage at operating current, junction capacitance, thermal resistance (625°C/W), and SOT-323 terminal configuration for space-constrained PCB layouts.

Technical Context

This Schottky diode operates with metal–semiconductor junction architecture to eliminate minority-carrier storage delay, enabling 5 ns trr performance. Its 30 V VRRM rating supports rail-to-rail clamping in 24 V systems and logic-level signal conditioning.

Designed for surface-mount assembly with MSL Level 1 moisture sensitivity and 260°C/10s soldering tolerance, BAT54CW RF maintains stable VF and IR across −40°C to +125°C junction temperature range while delivering 200 mW power dissipation in the SOT-323 footprint.

Key Specifications

Pinout & Package

Package: SOT-323 - Three-terminal surface-mount plastic package with gull-wing leads, 1.3 mm × 2.1 mm footprint, 5.0 mg mass, and MSL Level 1 handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with ON Semiconductor BAT54CW, this Taiwan Semiconductor BAT54CW RF offers identical electrical and mechanical specs for drop-in sourcing; versus BAV99W, it trades higher voltage rating and dual functionality for lower VF and optimized RF performance in compact single-diode placements.

Availability

BAT54CW RF is available at Aetrix Electronics and suitable for USB port protection, RF signal detection, reverse polarity protection, and low-voltage bias sequencing requiring stable component supply across high-mix production runs.

Supply support for BAT54CW RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The BAT54 series belongs to TSC's high-speed Schottky diode product line, engineered specifically for low-loss, high-frequency signal routing and protection in space-constrained portable and wireless electronics.

FAQ

What is the maximum junction temperature rating for BAT54CW RF?

The BAT54CW RF has a maximum junction temperature (TJ MAX) of 125°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet Version D2102. This rating applies under continuous DC operation with proper PCB thermal relief. Exceeding 125°C risks irreversible degradation of the Schottky barrier and increased reverse leakage. BAT54CW RF must be mounted on thermally adequate copper areas to maintain safe TJ under 200 mW dissipation.

Does BAT54CW RF support lead-free reflow soldering processes?

Yes, BAT54CW RF is qualified for lead-free reflow soldering at 260°C for 10 seconds, as specified in its mechanical data section. It meets J-STD-020 Moisture Sensitivity Level 1, eliminating bake requirements prior to assembly. The device uses halogen-free molding compound compliant with IEC 61249-2-21, and its SOT-323 terminations are matte tin-plated for reliable wetting. BAT54CW RF is fully compatible with standard IPC-7095-compliant reflow profiles.

How does the forward voltage of BAT54CW RF vary with current?

BAT54CW RF exhibits a measured forward voltage of 240 mV at 0.1 mA, 320 mV at 1.0 mA, 400 mV at 10 mA, 500 mV at 30 mA, and 1000 mV at 100 mA, per its electrical specifications table. This logarithmic VF–IF relationship reflects Schottky diode physics and confirms low conduction loss at typical bias currents. Designers should reference the BAT54CW RF curve in Figure 1 for precise interpolation across operating conditions.

Is BAT54CW RF pin-compatible with BAT54W, BAT54AW, and BAT54SW variants?

Yes, BAT54CW RF shares identical SOT-323 package dimensions, pin configuration (anode–cathode–exposed cathode pad), and terminal markings ("L43") with BAT54W, BAT54AW, and BAT54SW. All four variants differ only in forward voltage grading (CW = 400–500 mV at 30 mA), not pinout or footprint. BAT54CW RF can replace them directly in layouts without modification, provided the VF tolerance aligns with circuit requirements.

What is the typical junction capacitance of BAT54CW RF and at what condition is it measured?

The typical junction capacitance (CJ) of BAT54CW RF is 10 pF, measured at VR = 1 V and f = 1.0 MHz, as stated in the Electrical Specifications table. This value is critical for high-frequency applications such as RF detectors and ESD filters, where low capacitance minimizes signal loading. The BAT54CW RF CJ remains stable below 5 V reverse bias, per Figure 4 in the datasheet, making it suitable for 3.3 V and 5 V interface protection.