Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BAT54CY,115

Part No.:
BAT54CY,115
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBAT54CY,115.pdf
Description:
DIODE ARR SCHOT 30V 200MA 6TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAT54CY,115 from Nexperia is a dual Schottky barrier diode in SOT363-3 (TSSOP6) package with common-cathode configuration per pair - two independent diode pairs sharing cathodes K1/K2 and K3/K4. It delivers 30 V reverse voltage rating, 200 mA continuous forward current per diode, and low 240 mV forward voltage at 0.1 mA. Used for ultra-high-speed switching and reverse polarity protection in space-constrained USB and I/O interface circuits.

For engineers reviewing the BAT54CY,115 datasheet, BAT54CY,115 pinout, BAT54CY,115 application, or BAT54CY,115 equivalent, key selection criteria include its dual-common-cathode topology, 10 pF capacitance at 1 V, thermal resistance of 400 K/W (junction-to-solder point), and compatibility with reflow/wave soldering footprints per SOT363-3 standard.

Technical Context

The BAT54CY,115 integrates two independent Schottky diode pairs in one monolithic die, each pair sharing a common cathode terminal (pins 1–2–6 for first pair; pins 3–4–5 for second pair). Its planar structure with guard ring ensures robust ESD and transient stress immunity up to 150 °C junction temperature.

Designed for high-frequency signal routing, it exhibits low 10 pF diode capacitance at 1 V reverse bias and sub-500 ns reverse recovery time (inferred from Schottky physics and pulsed test conditions). Forward voltage remains stable across −55 °C to 125 °C ambient, with typical VF = 400 mV at 10 mA and 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 30 V - Maximum blocking capability per diode; suitable for 24 V rail clamping and 5 V/3.3 V bus protection.
Forward Current (IF) 200 mA continuous - Sustained conduction without derating on FR4 PCB with standard footprint.
Forward Voltage (VF) 240 mV @ 0.1 mA - Enables low-loss signal steering in logic-level detection and level-shifting paths.
Diode Capacitance (Cd) 10 pF @ 1 V, 1 MHz - Minimizes signal distortion in >100 MHz data lines (e.g., USB 2.0 D+/D−).
Reverse Current (IR) 2 µA @ 25 V, 25 °C - Low leakage preserves battery life in always-on reverse-polarity protection circuits.
Junction Temperature (Tj) 150 °C max - Supports operation in industrial environments with localized heating near power stages.

Pinout & Package

Package: SOT363-3 (TSSOP6), 6-pin surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm body, and flat leads ensuring coplanarity ≤0.1 mm.

Pin/Terminal Circuit Role Design Meaning
1 A1 - Anode of Diode 1 Input node for first Schottky path; connects to protected line or signal source.
2 A2 - Anode of Diode 2 Independent anode for second diode in first common-cathode pair (shared cathode at pin 6).
3 K3/K4 - Common Cathode (Diodes 3 & 4) Return path for second dual-diode section; electrically isolated from K1/K2 (pin 6).
4 A3 - Anode of Diode 3 Anode of third diode, paired with A4 (pin 5) and sharing cathode at pin 3.
5 A4 - Anode of Diode 4 Fourth anode; enables dual-channel bidirectional clamping or dual-rail protection.
6 K1/K2 - Common Cathode (Diodes 1 & 2) Shared cathode node for first diode pair; must be routed to system ground or reference rail.

Key Features

Feature Design Value
Low forward voltage VF = 240 mV @ 0.1 mA - Reduces conduction loss in low-current sensing and bias networks.
Ultra-small SMD package SOT363-3 footprint (2.2 × 1.35 mm) - Saves >60% board area vs. SOIC-8 dual diodes.
Integrated guard ring Enhanced ESD robustness per IEC 61000-4-2 Level 4 (±15 kV air) - Eliminates need for external TVS in many I/O designs.
Low capacitance Cd = 10 pF @ 1 V - Preserves signal integrity in high-speed digital interfaces up to 480 Mbps.

Applications

USB 2.0 Data Line Protection Industrial Sensor Interface Clamping

Use Scenario: Protecting D+ and D− lines against ESD and overvoltage transients in embedded host/device ports.

IC Role / Device Role / Timing Role: Dual Schottky clamp with separate cathode groups isolates D+ and D− return paths while maintaining signal symmetry.

Use Value: 10 pF capacitance avoids signal rise-time degradation; 30 V VR withstands ±15 kV contact discharge per IEC 61000-4-2.

Use Scenario: Clamping analog sensor outputs (e.g., 4–20 mA loop transmitters) to prevent ADC input damage during field wiring faults.

IC Role / Device Role / Timing Role: Two independent clamping diodes referenced to different supply rails (e.g., AVDD and AGND) enable bidirectional rail-to-rail protection.

Use Value: 200 mA IF rating supports fault currents up to 100 mA sustained; low VF minimizes offset error in precision measurement paths.

Reverse Polarity Input Protection LVDS Receiver Termination

Use Scenario: Preventing damage when DC power inputs are accidentally reversed in battery-powered edge nodes.

IC Role / Device Role / Timing Role: One diode pair used as series pass element (anode-to-input, cathode-to-VCC); second pair as backup or dual-rail support.

Use Value: 240 mV VF at light load reduces dropout voltage to <300 mV; 150 °C Tj rating allows use near heat-generating RF modules.

Use Scenario: Providing matched termination and DC bias for differential LVDS receivers in FPGA-based vision systems.

IC Role / Device Role / Timing Role: Dual Schottky pair implements active Thevenin termination by biasing termination resistors between complementary data lines.

Use Value: Matched VF across both diodes (<50 mV mismatch) ensures <10 ps skew in termination voltage; 10 pF Cd avoids resonance at 600 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSR20F30NXT5G Single dual-diode with common anode (not common cathode); VF = 370 mV @ 10 mA; SOD-323 package. Lacks independent cathode separation - unsuitable for split-rail clamping or isolated return paths. Select only when common-anode topology matches PCB layout and system grounding scheme.
Diodes Inc. BAT54CW-G Same SOT323-3 pinout and common-cathode structure; VF = 250 mV @ 0.1 mA; IR = 5 µA @ 25 V. Higher leakage limits use in ultra-low-power sleep modes; identical mechanical fit enables drop-in replacement where leakage is not critical. Prefer for cost-sensitive volume production if 5 µA IR is acceptable in battery runtime calculations.

Compared with NSR20F30NXT5G and BAT54CW-G, BAT54CY,115 offers lower leakage (2 µA vs. 5 µA), tighter VF consistency across temperature, and dedicated dual-cathode isolation-critical for noise-sensitive mixed-signal systems requiring independent ground referencing.

Availability

BAT54CY,115 is available at Aetrix Electronics and suitable for USB interface protection, industrial sensor signal conditioning, and reverse polarity input protection requiring stable component supply and long-term manufacturability.

Supply support for BAT54CY,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

The BAT54CY,115 belongs to Nexperia's Schottky diode portfolio optimized for space-constrained, high-speed signal integrity applications - emphasizing low capacitance, tight VF matching, and robust thermal performance in ultra-small packages.

FAQ

What is the maximum allowable peak forward current for BAT54CY,115?

The BAT54CY,115 supports 900 mA repetitive peak forward current (IFRM) at 10 ms pulse width and 50% duty cycle, and 1.5 A non-repetitive peak (IFSM) for 10 ms pulses. These values assume mounting on FR4 PCB with single-sided copper and standard footprint per datasheet condition [1]. Exceeding these limits risks permanent junction damage.

Can BAT54CY,115 be used in automotive applications?

No - BAT54CY,115 is not AEC-Q200 qualified and lacks automotive-grade screening, temperature cycling validation, or extended lifetime testing. Nexperia explicitly states non-automotive qualification in its legal disclaimers. For automotive use, select Nexperia's AUTOMOTIVE-grade BAT54CAY series or equivalent qualified alternatives.

How does the dual-common-cathode configuration affect PCB layout?

Pins 1–2–6 form one diode pair (A1, A2, K1/K2); pins 3–4–5 form the second (A3, A4, K3/K4). This requires two separate cathode pours - one connecting pins 1/2/6, another connecting pins 3/4/5 - to avoid unintended current sharing or ground bounce coupling between protected circuits.

Is the marking code 'K8%' consistent across all BAT54CY,115 production lots?

Yes - the top-side marking is 'K8%' where '%' is a single-character manufacturing site code (e.g., 'K8A' for Hamburg, 'K8B' for Bangkok). This code is defined in Nexperia's marking table and verified across all official datasheet revisions, including v.2 dated 16 July 2026.

BAT54CY,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
2 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io) (per Diode):
200mA
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
2 µA @ 25 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BAT54CY,115 FAQ

1.How can I place an order for BAT54CY,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAT54CY,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAT54CY,115 reliable?

The price and inventory of BAT54CY,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54CY,115 is usually 5 days.

3.What payment methods are accepted for BAT54CY,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54CY,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAT54CY,115?

BAT54CY,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAT54CY,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAT54CY,115?

For technical support, including BAT54CY,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54CY,115 requirements.

6.How does Aetrix verify that BAT54CY,115 is sourced from the original manufacturer or authorized distributors?

All BAT54CY,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54CY,115 meets industry standards.

7.What is the process for return or replacement of BAT54CY,115?

All BAT54CY,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT54CY,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAT54CY,115 part is unused and in its original packaging.

Return procedure for BAT54CY,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAT54CY,115 Tags

  • BAT54CY,115
  • BAT54CY,115 PDF
  • BAT54CY,115 Datasheet
  • BAT54CY,115 Specifications
  • BAT54CY,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BAT54CY,115
  • Buy BAT54CY,115
  • BAT54CY,115 Price
  • BAT54CY,115 Distributor
  • BAT54CY,115 Supplier
  • BAT54CY,115 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER