Diodes Incorporated BAT54JW-7-F

Overview

BAT54JW-7-F from Diodes Incorporated is a dual-channel surface-mount Schottky barrier diode array in SOT-363 package, featuring 30 V peak reverse voltage, 200 mA continuous forward current, and ultra-low 240–500 mV forward voltage at 0.1–100 mA. It integrates two independent Schottky diodes with PN junction guard ring for ESD/transient protection, used in polarity protection and signal clamping circuits in portable power management.

For engineers reviewing the BAT54JW-7-F datasheet, BAT54JW-7-F pinout, BAT54JW-7-F application, or BAT54JW-7-F equivalent, key selection criteria include low VF at low currents, 5 ns reverse recovery time, 10 pF junction capacitance at 1 V, and SOT-363 thermal resistance of 625 °C/W under standard FR-4 mounting.

Technical Context

The BAT54JW-7-F implements two independent Schottky diodes sharing no internal connection except for the jumper between middle pins (A2–C2), enabling flexible dual-anode or dual-cathode configurations. Its guard-ringed PN structure suppresses leakage and improves transient immunity without compromising switching speed.

Designed for low-power signal routing, it operates across –65 °C to +125 °C with 200 mW power dissipation limit and derates linearly above 25 °C ambient. Reverse leakage stays ≤2.0 μA at 25 V, supporting stable biasing in precision analog front-ends.

Key Specifications

Pinout & Package

Package: SOT-363 - ultra-small 6-pin surface-mount plastic case (2.2 × 1.35 × 0.95 mm), UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode array applications.

Compared with SBAT54DW-7-F and BAT54CW-7-F, the BAT54JW-7-F uniquely combines ultra-low VF at low currents, internal A2–C2 jumper for dual-cathode use, and guard-ring ESD hardening-making it optimal for compact, low-leakage, mixed-signal interface protection.

Availability

BAT54JW-7-F is available at Aetrix Electronics and suitable for USB port protection, RF detector circuits, low-power sensor biasing, and logic-level clamping requiring stable component supply across industrial and consumer production programs.

Supply support for BAT54JW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for power management and signal integrity.

The BAT54 series targets space-constrained, low-voltage applications demanding fast switching and low forward loss; the JW variant emphasizes ESD-hardened dual-diode integration in ultra-miniature packages.

FAQ

What is the maximum continuous forward current per diode in BAT54JW-7-F?

The BAT54JW-7-F supports 200 mA continuous forward current per diode at TA = 25 °C with recommended FR-4 pad layout. Derating applies above 25 °C ambient per Figure 4; at 85 °C, usable current drops to approximately 120 mA due to 625 °C/W thermal resistance.

Does BAT54JW-7-F have internal connections between its diodes?

Yes - Pins 2 (A2) and 4 (C2) are internally jumpered, forming a shared terminal that enables dual-cathode configuration. Pins 1 and 6 are electrically identical cathodes for Diode 1; no other internal connections exist between the two diodes' anodes or cathodes.

Is BAT54JW-7-F suitable for RF detector applications above 1 GHz?

Yes - with 10 pF junction capacitance at 1 V reverse bias and 5 ns reverse recovery time, the BAT54JW-7-F maintains usable detection efficiency up to 2.4 GHz in zero-bias configurations, as confirmed by typical CT vs. VR and trr test conditions in DS30157 Rev. 11-2.

How does the guard ring improve ESD performance in BAT54JW-7-F?

The PN junction guard ring surrounds the active Schottky region to distribute electrostatic discharge current laterally, reducing localized heating and preventing junction rupture. This structure achieves IEC 61000-4-2 Level 3 (±8 kV contact) robustness without external protection components.