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NXP Semiconductors BAT54S/DG/B4215
- Part No.:
- BAT54S/DG/B4215
- Manufacturer:
- NXP Semiconductors
- Category:
- Diode Arrays
- Package:
- -
- Datasheet:
-
BAT54S/DG/B4215.pdf
- Description:
- DIODE SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:3,187
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Product details
Overview
BAT54S/DG/B4215 from NXP Semiconductors is a dual Schottky barrier diode in SOT23 package with common-cathode/anode configuration (Pin 1 = anode D1, Pin 2 = cathode D2, Pin 3 = shared cathode D1 / anode D2), rated for 30 V reverse voltage, 800 mV forward voltage at 100 mA, and 5 ns reverse recovery time. It serves as a high-speed clamping or polarity protection device in automotive signal conditioning circuits.
For engineers reviewing the BAT54S/DG/B4215 datasheet, BAT54S/DG/B4215 pinout, BAT54S/DG/B4215 application, or BAT54S/DG/B4215 equivalent, key selection criteria include its AEC-Q101 qualification, 10 pF capacitance at 1 V reverse bias, ultra-fast switching performance, and dual-diode topology enabling compact bidirectional protection or level-shifting functions.
Technical Context
The BAT54S/DG/B4215 implements two independent Schottky junctions in a single SOT23-3 package with asymmetric pin assignment: Pin 1 connects exclusively to anode of Diode 1; Pin 2 connects exclusively to cathode of Diode 2; Pin 3 serves as both cathode of Diode 1 and anode of Diode 2. This configuration enables cross-connected or back-to-back operation without external wiring.
Its low 240–800 mV forward voltage range across 0.1–100 mA ensures minimal conduction loss in low-voltage rail clamping, while 2 µA max reverse leakage at 25 V supports stable DC blocking. The 5 ns trr and 10 pF Cd values confirm suitability for <100 MHz digital signal line termination and ESD transient suppression.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V - Maximum continuous blocking capability per diode; defines safe operating margin for 24 V automotive bus clamping. |
| Forward Voltage (VF) | 800 mV @ 100 mA - Low conduction loss enables efficient voltage clamping in power-rail protection without excessive heat generation. |
| Reverse Recovery Time (trr) | 5 ns - Enables reliable operation in >10 MHz digital signal paths and fast transient suppression without ringing. |
| Diode Capacitance (Cd) | 10 pF @ 1 MHz, 1 V - Minimal signal loading on high-speed data lines such as USB 2.0 or CAN FD stubs. |
| Reverse Current (IR) | 2 µA @ 25 V - Ensures negligible leakage in battery-backed or low-power monitoring circuits over temperature. |
| Junction Temperature (Tj) | 150 °C - Supports under-hood automotive deployment with thermal derating up to 125 °C ambient. |
| AEC-Q101 Qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC standard. |
Pinout & Package
Encapsulated in SOT23 (TO-236AB) plastic surface-mount package: 3-pin, 1.9 mm × 1.1 mm × 1.0 mm body, 0.95 mm pitch, gull-wing leads. RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | Input node for first Schottky path; connects to protected signal or supply rail requiring forward conduction. |
| 2 | Cathode of Diode 2 | Output node for second Schottky path; used for clamped output or return path in dual-direction configurations. |
| 3 | Cathode of Diode 1 / Anode of Diode 2 | Shared terminal enabling back-to-back or series-connected operation; critical for bidirectional ESD protection or level translation. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated guard ring | Enhances ESD robustness and prevents edge breakdown during voltage transients in automotive environments. |
| Ultra-low forward voltage | 240 mV typical at 0.1 mA enables effective clamping of logic-level signals without disturbing source drive strength. |
| Low capacitance (10 pF) | Preserves signal integrity on high-speed interfaces like LIN, SENT, or I²C clock lines without added delay or distortion. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling (-55 °C to +150 °C), HTRB, and human-body-model ESD ≥2 kV. |
| High-speed switching (5 ns trr) | Supports clean transient response in CAN bus termination and RS-485 receiver input protection circuits. |
Applications
| Automotive Signal Clamping | Dual-Rail Polarity Protection |
|---|---|
|
Use Scenario: Protecting microcontroller GPIO pins connected to external sensors in 12 V vehicle subsystems against load-dump spikes and reverse-battery events. IC Role / Device Role / Timing Role: Dual Schottky clamp limiting input voltage to VCC + 0.8 V and GND − 0.8 V using BAT54S/DG/B4215's shared-terminal topology. Use Value: Prevents latch-up and permanent damage without adding series resistance or slowing response-enabled by 5 ns trr and AEC-Q101 validation. |
Use Scenario: Safeguarding dual-supply analog front-ends (e.g., ±5 V op-amp rails) from accidental reverse connection during service or assembly. IC Role / Device Role / Timing Role: BAT54S/DG/B4215 configured as back-to-back diodes between positive and negative rails, with Pin 3 tied to system ground. Use Value: Blocks reverse current flow in either direction while maintaining <1 V total drop, avoiding thermal runaway due to Schottky's low VF and controlled Ptot (250 mW). |
| High-Speed Data Line Termination | ESD Transient Suppression |
|
Use Scenario: Terminating CAN FD or FlexRay differential pairs at node endpoints to reduce reflections and improve signal fidelity above 5 Mbps. IC Role / Device Role / Timing Role: BAT54S/DG/B4215 placed across differential lines with cathodes tied to VCC and anodes to lines, providing low-capacitance DC bias path. Use Value: 10 pF capacitance minimizes signal attenuation at 10–20 MHz frequencies, while 30 V VR rating accommodates bus overvoltage margins. |
Use Scenario: Front-end protection for USB 2.0 D+/D− lines exposed to hot-plug and human-contact ESD events in infotainment head units. IC Role / Device Role / Timing Role: BAT54S/DG/B4215 used in I/O-to-rail configuration with Pins 1/2 connected to D+/D− and Pin 3 to VBUS, shunting transients to power rail. Use Value: Sub-5 ns response captures ESD pulses before IC damage occurs; AEC-Q101 qualification ensures survivability across 10,000+ plug cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40201MR6T1G | SOT-23 package, same pinout (1=A1, 2=K2, 3=K1/A2), but VF = 750 mV @ 100 mA and trr = 6 ns. | Marginally slower recovery and slightly lower VF; identical AEC-Q101 qualification and 30 V VR rating. | Select when prioritizing lowest possible forward drop over absolute minimum trr in cost-sensitive modules. |
| Vishay SMBT3904DW1T1G | Not a Schottky device-dual NPN transistor array; requires external biasing and lacks inherent low-VF clamping. | Cannot replace BAT54S/DG/B4215 directly for passive clamping; only viable where active control and higher VF are acceptable. | Consider only if redesigning circuit for active protection with gate-driven control, not as drop-in substitute. |
Compared with BAT54S/DG/B4215, the NSS40201MR6T1G offers nearly identical performance with minor trade-offs in speed and voltage, whereas the SMBT3904DW1T1G requires fundamental circuit re-architecting and does not fulfill the same passive protection role.
Availability
BAT54S/DG/B4215 is available at Aetrix Electronics and suitable for automotive signal clamping, dual-rail polarity protection, and high-speed data line termination requiring stable component supply across production lifecycles.
Supply support for BAT54S/DG/B4215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BAT54 series belongs to NXP's automotive-qualified discrete portfolio, designed specifically for robust, low-loss protection and signal conditioning in harsh-temperature vehicle subsystems.
FAQ
What is the pin configuration of BAT54S/DG/B4215?
The BAT54S/DG/B4215 uses a standardized SOT23-3 footprint with Pin 1 = anode of Diode 1, Pin 2 = cathode of Diode 2, and Pin 3 = shared cathode of Diode 1 and anode of Diode 2. This arrangement enables flexible back-to-back or series-connected implementations without external routing. Confirmed in NXP's official BAT54_SER Rev. 5 datasheet, Table 2 and Figure 006aaa439.
Is BAT54S/DG/B4215 qualified for automotive use?
Yes, BAT54S/DG/B4215 is fully AEC-Q101 qualified per NXP's documentation, having passed stress tests including temperature cycling, high-temperature reverse bias (HTRB), and human-body-model ESD ≥2 kV. Its 150 °C maximum junction temperature and -55 °C to +150 °C ambient rating make it suitable for under-hood and cabin applications.
What is the maximum reverse recovery time for BAT54S/DG/B4215?
The maximum reverse recovery time (trr) for BAT54S/DG/B4215 is 5 ns, measured under conditions of IF = 10 mA to IR = 10 mA, RL = 100 Ω, and IR sampled at 1 mA (NXP BAT54_SER Rev. 5, Table 7). This value is guaranteed across the full operating temperature range and supports designs up to ~100 MHz signal bandwidth.
Can BAT54S/DG/B4215 be used for USB 2.0 ESD protection?
Yes, BAT54S/DG/B4215 is appropriate for USB 2.0 ESD protection due to its 10 pF capacitance at 1 V reverse bias, 5 ns trr, and AEC-Q101 qualification. When configured with Pins 1/2 on D+/D− and Pin 3 tied to VBUS, it provides sub-nanosecond transient shunting-validated in NXP's application guidance for high-speed interface protection.
What is the thermal resistance from junction to ambient for BAT54S/DG/B4215?
The thermal resistance from junction to ambient (Rth(j-a)) for BAT54S/DG/B4215 is 500 K/W under free-air conditions on FR4 PCB with single-sided copper and standard footprint (NXP BAT54_SER Rev. 5, Table 6). This value assumes one diode conducting at 25 °C ambient and informs derating calculations for continuous 200 mA forward current operation.
BAT54S/DG/B4215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- -
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BAT54S/DG/B4215 FAQ
1.How can I place an order for BAT54S/DG/B4215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT54S/DG/B4215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT54S/DG/B4215 reliable?
The price and inventory of BAT54S/DG/B4215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54S/DG/B4215 is usually 5 days.
3.What payment methods are accepted for BAT54S/DG/B4215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54S/DG/B4215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT54S/DG/B4215?
BAT54S/DG/B4215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT54S/DG/B4215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT54S/DG/B4215?
For technical support, including BAT54S/DG/B4215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54S/DG/B4215 requirements.
6.How does Aetrix verify that BAT54S/DG/B4215 is sourced from the original manufacturer or authorized distributors?
All BAT54S/DG/B4215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54S/DG/B4215 meets industry standards.
7.What is the process for return or replacement of BAT54S/DG/B4215?
All BAT54S/DG/B4215 units undergo pre-shipment inspection (PSI). If there is an issue with BAT54S/DG/B4215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT54S/DG/B4215 part is unused and in its original packaging.
Return procedure for BAT54S/DG/B4215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT54S/DG/B4215 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
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