My Inquiry
My Account
Taiwan Semiconductor Corporation BAT54SW RF
- Part No.:
- BAT54SW RF
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAT54SW RF.pdf
- Description:
- SOT-323, 30V, 0.2A, SCHOTTKY DIO
- Quantity:
- Payment:
- Shipping:
Inventory:7,288
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAT54SW RF from Taiwan Semiconductor is a 30 V, 200 mA Schottky barrier diode in SOT-323 package, optimized for ultra high-speed switching and voltage clamping in low-voltage signal paths. It delivers 5 ns reverse recovery time, 10 pF junction capacitance at 1 V, and forward voltage as low as 240 mV at 0.1 mA - enabling efficient protection and signal routing in portable RF front-ends and USB interface circuits.
For engineers reviewing the BAT54SW RF datasheet, BAT54SW RF pinout, BAT54SW RF application, or BAT54SW RF equivalent, key selection criteria include its 30 V repetitive peak reverse voltage, 600 mA surge current rating, 125°C maximum junction temperature, and RoHS/halogen-free compliance for consumer and industrial PCB designs requiring fast, low-loss discrete protection.
Technical Context
This Schottky diode operates without minority-carrier storage delay, enabling sub-5 ns switching transitions critical for RF envelope detection and high-frequency clamp circuits. Its low 240–1000 mV forward voltage range across 0.1–100 mA ensures minimal insertion loss in signal path protection.
The SOT-323 package supports reflow soldering up to 260°C/10s and exhibits 625°C/W junction-to-ambient thermal resistance, limiting continuous power dissipation to 200 mW at room ambient - making it suitable for space-constrained, thermally sensitive applications like Bluetooth module ESD shunts and SIM card interface clamps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 30 V - supports clamping of logic-level and USB 3.3 V/5 V rails without breakdown |
| IF | 200 mA - continuous forward current rating sufficient for signal-level protection and biasing |
| trr | 5 ns - enables operation in >100 MHz switching applications such as RF detector inputs |
| CJ | 10 pF at 1 V - minimizes capacitive loading on high-impedance RF nodes and data lines |
| VF (at 10 mA) | 400 mV - reduces voltage drop and self-heating in low-power sensing and level-shifting paths |
| IR (at 25 V) | 2 µA - ensures negligible leakage in battery-backed or high-impedance monitoring circuits |
| TJ max | 125°C - allows reliable operation in enclosed handheld devices with limited airflow |
Pinout & Package
Package: SOT-323 - surface-mount, 3-terminal plastic case measuring 2.2 × 1.35 × 1.0 mm, moisture sensitivity level 1 (J-STD-020), compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node during conduction; defines polarity for reverse polarity protection |
| Cathode (Pin 2) | Forward current exit / reverse blocking terminal | Typically tied to ground or reference rail; carries clamped transient energy to sink |
| Case / Heat Slug (Pin 3) | Thermal and electrical common | Internally connected to cathode; provides enhanced thermal path and EMI shielding when grounded |
Key Features
| Feature | Design Value |
|---|---|
| Ultra high-speed switching | 5 ns trr enables use in 200+ MHz RF envelope detectors and high-frequency sample-and-hold clamp circuits |
| Low forward voltage | 240 mV at 0.1 mA preserves signal integrity in micro-power sensor interfaces and battery-monitoring dividers |
| Voltage clamping capability | 30 V VRRM + 2 µA IR at 25 V allows precise rail-to-rail clamping without leakage-induced offset drift |
| SOT-323 footprint | 2.2 × 1.35 mm outline fits dense RF layouts; pin 3 (cathode-connected slug) improves grounding for ESD-sensitive analog inputs |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and EU RoHS - qualified for consumer electronics and medical peripherals |
Applications
| USB 2.0 Data Line Protection | RF Power Detector Clamp |
|---|---|
Use Scenario: Protecting D+ and D− lines against ESD and overvoltage transients in portable USB peripherals. IC Role / Device Role / Timing Role: Bidirectional clamping diode placed between data line and VBUS or ground rail. Use Value: 5 ns trr prevents data corruption during hot-plug events; 10 pF CJ avoids signal rise-time degradation above 480 Mbps. | Use Scenario: Clamping output of logarithmic RF power detector ICs to prevent saturation or rail-to-rail swing beyond ADC input range. IC Role / Device Role / Timing Role: Fast-acting DC clamp limiting peak detector output to safe levels before analog-to-digital conversion. Use Value: 400 mV VF at 10 mA ensures <1% gain error in precision detector chains; 30 V VRRM accommodates wide dynamic range signals. |
| Reverse Polarity Input Protection | Low-Voltage Logic-Level Shifter Clamp |
Use Scenario: Preventing damage from incorrect battery or adapter connection in coin-cell powered IoT sensors. IC Role / Device Role / Timing Role: Series-connected Schottky diode in supply path, oriented to block reverse current. Use Value: 200 mA IF rating supports typical sensor node loads; 240 mV VF minimizes dropout in 1.8–3.3 V systems. | Use Scenario: Level-shifting between 1.8 V MCU GPIO and 3.3 V peripheral while preventing back-drive current. IC Role / Device Role / Timing Role: Clamp diode from 3.3 V rail to 1.8 V domain, conducting only during overvoltage fault conditions. Use Value: 2 µA IR at 25 V eliminates static current draw; 10 pF CJ avoids timing skew in 10+ MHz digital control lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230P2T5G | Same SOT-323 package; 30 V VRRM, 200 mA IF, but 350 mV VF (typ) at 10 mA - 50 mV higher than BAT54SW RF | Higher VF increases power loss in battery-critical applications; otherwise functionally interchangeable in clamping roles | Select when tighter VF distribution or alternate qualification is required; verify layout compatibility with identical pinout |
| Diodes Incorporated BAV99LT1G | Dual series-configured diode in SOT-23; 70 V VRRM, 215 mA IF, 1.25 ns trr - faster but higher VF (1.25 V @ 50 mA) | Not pin-compatible; requires redesign for single-diode placement; better suited for high-voltage transient suppression | Choose only if dual-diode topology or >70 V clamping is needed; not a drop-in replacement for BAT54SW RF |
Compared with NSR0230P2T5G and BAV99LT1G, BAT54SW RF offers the lowest forward voltage in its class at low currents and optimal junction capacitance for RF-signal integrity - making it preferred for ultra-low-power, high-frequency clamping where VF and CJ are design-critical.
Availability
BAT54SW RF is available at Aetrix Electronics and suitable for USB interface protection, RF detector clamping, reverse polarity input protection, and low-voltage logic-level shifting requiring stable component supply and full traceability.
Supply support for BAT54SW RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, rectifiers, and signal diodes for consumer, industrial, and computing markets.
The BAT54W/AW/CW/SW family was designed specifically for high-speed, low-leakage signal-path protection in portable electronics - emphasizing fast recovery, low capacitance, and robust reflow survivability in SOT-323 packaging.
FAQ
What is the maximum junction temperature rating for BAT54SW RF?
The BAT54SW RF has a maximum junction temperature (TJ max) of 125°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet (Version D2102). This rating applies under continuous operation with proper PCB thermal relief and limits ambient operating temperature in sealed enclosures. Derating is required above 25°C ambient to maintain reliability - BAT54SW RF must not exceed 125°C junction temperature in final application.
Is BAT54SW RF pin-compatible with BAT54W RFG or BAT54AW RFG?
Yes - BAT54SW RF shares identical SOT-323 package dimensions, pin configuration (anode/cathode/slug), and marking layout (L44) with BAT54W RFG (L4), BAT54AW RFG (L42), and BAT54CW RFG (L43). All variants use the same die construction and thermal/mechanical specifications; only the forward voltage grade differs - BAT54SW RF is the "standard" variant with VF ≤ 500 mV at 30 mA.
Does BAT54SW RF meet halogen-free requirements?
Yes - BAT54SW RF is halogen-free per IEC 61249-2-21 and RoHS compliant, as confirmed in the "Ordering and Marking Information" section of the Taiwan Semiconductor datasheet (Version D2102). The "G" suffix in BAT54SW RFG denotes green compound, and the device carries full material declaration documentation for environmental compliance reporting.
What is the reverse recovery time (trr) specification for BAT54SW RF?
The reverse recovery time (trr) for BAT54SW RF is 5 ns, measured under IF = 10 mA, IR = 10 mA to IR = 1 mA, RL = 100 Ω per the Electrical Specifications table in the official datasheet. This value is typical and guaranteed maximum - critical for maintaining signal fidelity in RF detector and high-speed digital clamp applications where BAT54SW RF is deployed.
Can BAT54SW RF be used for reverse polarity protection in 3.3 V systems?
Yes - BAT54SW RF is suitable for reverse polarity protection in 3.3 V systems due to its 200 mA continuous forward current rating, 240–400 mV forward voltage at low currents, and 30 V repetitive peak reverse voltage. Its low VF minimizes voltage drop across the protection path, preserving headroom for downstream LDOs or regulators - a key design advantage of BAT54SW RF in compact battery-powered devices.
BAT54SW RF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 25 V
- Capacitance @ Vr, F:
- 10pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
- Operating Temperature - Junction:
- 125°C
BAT54SW RF FAQ
1.How can I place an order for BAT54SW RF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT54SW RF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT54SW RF reliable?
The price and inventory of BAT54SW RF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54SW RF is usually 5 days.
3.What payment methods are accepted for BAT54SW RF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54SW RF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT54SW RF?
BAT54SW RF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT54SW RF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT54SW RF?
For technical support, including BAT54SW RF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54SW RF requirements.
6.How does Aetrix verify that BAT54SW RF is sourced from the original manufacturer or authorized distributors?
All BAT54SW RF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54SW RF meets industry standards.
7.What is the process for return or replacement of BAT54SW RF?
All BAT54SW RF units undergo pre-shipment inspection (PSI). If there is an issue with BAT54SW RF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT54SW RF part is unused and in its original packaging.
Return procedure for BAT54SW RF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT54SW RF Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
