Taiwan Semiconductor Corporation BAT54T RF
- Part No.:
- BAT54T RF
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAT54T RF.pdf
- Description:
- SOT-363, 30V, 0.2A, SCHOTTKY DIO
- Quantity:
- Payment:

- Shipping:

Inventory:8,340
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAT54T RF from Taiwan Semiconductor is a dual-channel Schottky barrier diode in SOT-363 package, rated for 200mA forward current and 30V reverse voltage, with 1.0V forward drop at 100mA and 5ns reverse recovery time-used in high-speed switching and reverse polarity protection circuits.
For engineers reviewing the BAT54T RF datasheet, BAT54T RF pinout, BAT54T RF application, or BAT54T RF equivalent, key selection criteria include low VF (≤1.0V @ 100mA), fast trr (≤5 ns), SOT-363 thermal resistance (625°C/W), junction temperature range (–65°C to +150°C), and RoHS/halogen-free compliance for automotive and industrial PCB designs.
Technical Context
The BAT54T RF integrates two independent Schottky diodes in a single SOT-363 package with common-cathode configuration (pinout: 1–Anode1, 2–Cathode, 3–Anode2). It operates with minimal forward voltage drop and ultrafast recovery, enabling efficient clamping and signal steering in DC-DC converter feedback paths and USB port protection.
Its thermal performance (RθJA = 625°C/W) and moisture sensitivity level 1 rating support reflow-compatible assembly without baking, while JESD201 Class 1A whisker resistance ensures long-term solder joint reliability in vibration-prone environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF (Continuous) | 200 mA - supports sustained current in power rail clamping and load-switching paths |
| VRRM | 30 V - enables use in 24V industrial control and 5V/12V USB/PCIe interface protection |
| VF @ 100mA | 1.00 V - reduces conduction loss vs. silicon diodes, improving efficiency in low-voltage bias networks |
| trr | 5 ns - allows operation up to ~70 MHz switching frequencies without tail current issues |
| CT @ 1V | 10 pF - minimizes capacitive loading on high-speed data lines (e.g., RS-485, CAN FD receivers) |
| TJ Range | –65°C to +150°C - qualified for under-hood automotive and outdoor industrial ambient conditions |
Pinout & Package
SOT-363 (SC-88) surface-mount package with 6-pin footprint, matte tin-plated leads, UL 94V-0 molding compound, and 6.99 mg unit weight. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | Input node for first Schottky path; connects to supply or signal source requiring clamping |
| 2 | Cathode (Common) | Shared cathode node-ties both diodes to reference rail (e.g., GND or VCC) |
| 3 | Anode of Diode 2 | Independent input node for second Schottky path; enables dual-rail or differential protection |
| 4 | No Connection | Internally unconnected; must be left floating or grounded per layout guidelines |
| 5 | No Connection | Internally unconnected; no electrical function-no routing required |
| 6 | No Connection | Internally unconnected; mechanical pad only-no thermal or electrical role |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | 5 ns reverse recovery enables clean edge transitions in 10–50 MHz digital signal routing |
| Low forward voltage drop | 1.0 V @ 100 mA reduces power loss by >40% vs. standard silicon diodes at same current |
| Surface mount device type | SOT-363 footprint supports automated placement and reflow at IPC-A-610 Class 2/3 standards |
| RoHS & halogen-free | Complies with IEC 61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing |
Applications
| USB Port Protection | DC-DC Converter Feedback Clamp |
|---|---|
Use Scenario: Prevents damage from reversed VBUS insertion or ESD-induced reverse bias in Type-A/Type-C receptacles. IC Role / Device Role / Timing Role: BAT54T RF acts as bidirectional clamping diode between VBUS and GND, limiting reverse voltage to <30 V. Use Value: 1.0 V forward drop ensures minimal impact on 5 V regulation margin; 5 ns trr avoids latch-up during hot-plug transients. | Use Scenario: Clamps feedback node voltage in synchronous buck converters to prevent op-amp saturation during light-load discontinuous conduction mode. IC Role / Device Role / Timing Role: BAT54T RF provides fast, low-VF clamp path from FB pin to reference rail, stabilizing regulation loop dynamics. Use Value: 10 pF junction capacitance avoids phase shift in high-gain feedback paths; SOT-363 size fits tight-layout converter IC footprints. |
| Reverse Polarity Input Protection | High-Speed Signal Steering |
Use Scenario: Installed in series with main power input to block reverse-connected batteries or adapters in portable instrumentation. IC Role / Device Role / Timing Role: BAT54T RF functions as low-loss series blocking diode using one channel, with second channel unused or paralleled for current sharing. Use Value: 200 mA continuous rating supports 12 V/100 mA sensor modules; 30 V VRRM covers 24 V nominal systems with surge margin. | Use Scenario: Routes clock or data signals between two microcontroller pins based on logic state in FPGA configuration interfaces. IC Role / Device Role / Timing Role: BAT54T RF serves as passive analog switch via forward-biased anode-cathode path, controlled by external bias voltage. Use Value: 5 ns trr supports ≤20 MHz signal routing; 10 pF CT prevents skew in matched-length differential pairs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004K-7 | Single-channel SOT-23, 200 mA/30 V, VF = 0.55 V @ 100 mA, trr = 4 ns | Lacks dual-diode integration; requires two devices for BAT54T RF's dual-path functionality | Select when space permits discrete placement and lower VF is critical over integration |
| NSR0230P2T5G | Dual common-cathode SOT-363, 200 mA/30 V, VF = 0.45 V @ 100 mA, trr = 4.5 ns | Lower VF improves efficiency but higher leakage (IR = 10 μA @ 25 V vs. BAT54T RF's 2 μA) | Prefer for battery-powered systems where conduction loss dominates over leakage budget |
Compared with DMN2004K-7 and NSR0230P2T5G, the BAT54T RF offers balanced trade-offs: integrated dual topology in minimal area, moderate VF (1.0 V), ultra-low leakage (2 μA), and proven thermal robustness-making it optimal for space-constrained industrial and automotive signal conditioning.
Availability
BAT54T RF is available at Aetrix Electronics and suitable for USB port protection, DC-DC converter feedback clamping, and reverse polarity input protection requiring stable component supply across production lifecycles.
Supply support for BAT54T RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.
The BAT54T RF belongs to TSC's BAT54 family of high-speed Schottky diodes, designed specifically for compact, high-reliability protection and signal routing in space-constrained PCBs with demanding thermal and environmental requirements.
FAQ
What is the pin configuration of the BAT54T RF?
The BAT54T RF uses a common-cathode dual-diode configuration in SOT-363: Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2. Pins 4–6 are internally unconnected and must remain floating or grounded per layout guidance. This arrangement enables independent clamping paths with minimal board area-critical for BAT54T RF deployment in multi-rail protection schemes.
Does the BAT54T RF meet automotive AEC-Q200 requirements?
The BAT54T RF is not AEC-Q200 qualified. While its –65°C to +150°C junction temperature range and JESD201 Class 1A whisker resistance support harsh environments, Taiwan Semiconductor does not list AEC-Q200 test reports for BAT54T RF. For automotive applications, users must perform system-level validation; BAT54T RF remains suitable for industrial and commercial-grade designs per its published specifications.
What is the maximum reverse leakage current for BAT54T RF at 25 V?
The maximum reverse leakage current for BAT54T RF is 2 μA at VR = 25 V and TJ = 25°C, measured per pulse test (PW = 30 ms). This low IR value ensures minimal standby power loss in always-on protection circuits and maintains signal integrity in high-impedance clamp nodes-key for reliable BAT54T RF operation in battery-backed systems.
Can BAT54T RF replace BAT54AD in the same PCB layout?
Yes, BAT54T RF and BAT54AD share identical SOT-363 packaging, pinout, and absolute maximum ratings-including 30 V VRRM, 200 mA IF, and 600 mA IFSM. Their marking codes differ (KLA vs. KL6), but electrically and mechanically they are interchangeable. No PCB changes are needed when substituting BAT54T RF for BAT54AD in existing designs.
What is the thermal resistance (RθJA) of BAT54T RF, and how does it affect power dissipation?
The junction-to-ambient thermal resistance of BAT54T RF is 625°C/W. At 200 mA and 1.0 V forward drop, power dissipation is 200 mW-resulting in a theoretical junction temperature rise of 125°C above ambient. Combined with its –65°C to +150°C TJ rating, this confirms BAT54T RF can safely operate at up to +25°C ambient in sealed enclosures without forced cooling.
BAT54T RF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 25 V
- Capacitance @ Vr, F:
- 10pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
- Operating Temperature - Junction:
- -55°C ~ 125°C
BAT54T RF FAQ
1.How can I place an order for BAT54T RF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT54T RF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT54T RF reliable?
The price and inventory of BAT54T RF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54T RF is usually 5 days.
3.What payment methods are accepted for BAT54T RF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54T RF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT54T RF?
BAT54T RF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT54T RF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT54T RF?
For technical support, including BAT54T RF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54T RF requirements.
6.How does Aetrix verify that BAT54T RF is sourced from the original manufacturer or authorized distributors?
All BAT54T RF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54T RF meets industry standards.
7.What is the process for return or replacement of BAT54T RF?
All BAT54T RF units undergo pre-shipment inspection (PSI). If there is an issue with BAT54T RF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT54T RF part is unused and in its original packaging.
Return procedure for BAT54T RF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT54T RF Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
