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Nexperia USA Inc. BAT54VV,115
- Part No.:
- BAT54VV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAT54VV,115.pdf
- Description:
- DIODE ARR SCHOT 30V 200MA SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:1,739
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Product details
Overview
BAT54VV from Nexperia is a planar Schottky barrier triple diode with integrated guard ring for stress protection, housed in an ultra-small SOT666 package (1.6 mm × 1.2 mm × 0.55 mm). It comprises three electrically isolated diodes, each rated for 30 V reverse voltage, 200 mA DC forward current, and exhibits low forward voltage (800 mV at 100 mA), low capacitance (10 pF at 1 V), and 2 µA reverse leakage at 25 V - enabling use in high-speed signal routing and polarity protection circuits.
For engineers reviewing the BAT54VV datasheet, BAT54VV pinout, BAT54VV application, or BAT54VV equivalent, key selection criteria include its triple-diode isolation, SOT666 coplanarity for fine-pitch reflow, 590 K/W junction-to-ambient thermal resistance, and verified performance in line termination and inverse-polarity protection where space-constrained PCB layout and fast switching (<1 ns recovery) are critical.
Technical Context
The BAT54VV implements three independent Schottky junctions on a single die with a shared guard ring structure to enhance ESD and transient robustness. Each diode operates with zero minority-carrier storage, delivering sub-nanosecond reverse recovery and minimal switching loss.
Its SOT666 package features flat leads for consistent coplanarity and improved thermal conduction to the PCB, while the 0.5 mm pitch and 1.6 mm × 1.2 mm footprint support high-density routing in portable and IoT edge devices requiring multi-rail clamping or bidirectional signal conditioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V per diode - supports clamping in 3.3 V, 5 V, and 12 V logic and power rails without breakdown. |
| Forward Current (IF) | 200 mA DC per diode - sufficient for low-power signal-level protection and biasing in sensor interfaces. |
| Forward Voltage (VF) | 800 mV at 100 mA - minimizes conduction loss and self-heating in compact layouts with limited airflow. |
| Reverse Leakage (IR) | 2 µA at 25 V, 25 °C - ensures negligible standby current in battery-backed or always-on circuits. |
| Diode Capacitance (Cd) | 10 pF at 1 V, 1 MHz - preserves signal integrity up to ~1 GHz in RF front-end and USB/MIPI line termination. |
| Junction-to-Ambient Rth(j-a) | 590 K/W in free air - defines thermal derating curve for continuous operation on FR4 with single-sided copper. |
Pinout & Package
The BAT54VV is packaged in the SOT666 surface-mount plastic package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height, with flat leads ensuring ≤0.08 mm coplanarity for reliable reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 - Anode of Diode 1 | Independent input node for first Schottky path; enables discrete routing of three separate signal or power paths. |
| 2 | A2 - Anode of Diode 2 | Second isolated anode terminal; allows dual-rail clamping or differential pair protection without internal coupling. |
| 3 | A3 - Anode of Diode 3 | Third anode for tri-state or multi-voltage domain protection; supports simultaneous 3.3 V, 5 V, and 12 V rail conditioning. |
| 4 | K3 - Cathode of Diode 3 | Corresponding cathode for Diode 3; pin assignment enables symmetrical layout with alternating anode–cathode sequence. |
| 5 | K2 - Cathode of Diode 2 | Isolated cathode return for Diode 2; avoids shared cathode impedance that could compromise high-frequency decoupling. |
| 6 | K1 - Cathode of Diode 1 | Dedicated cathode for Diode 1; supports star-grounding strategies in mixed-signal PCBs to reduce crosstalk. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 800 mV @ 100 mA - reduces voltage drop and power dissipation in low-voltage signal paths (e.g., 1.8 V I²C lines). |
| Ultra-small SOT666 package | 1.6 mm × 1.2 mm footprint - saves >60% board area vs. SO-8 or SOT23-6 equivalents in space-critical wearables and modules. |
| Low capacitance | 10 pF @ 1 V - maintains signal rise/fall times <1 ns in high-speed digital interfaces (USB 2.0, MIPI D-PHY). |
| Flat lead geometry | ≤0.08 mm coplanarity - eliminates tombstoning risk and improves thermal transfer during reflow on dense, thermally asymmetric PCBs. |
Applications
| USB Data Line Protection | IoT Sensor Bias Clamping |
|---|---|
|
Use Scenario: Protecting D+ and D− lines of USB 2.0 ports against ESD and overvoltage events in portable chargers and docking stations. IC Role / Device Role / Timing Role: Triple Schottky diode configured as two back-to-back clamps (D+/D− to VBUS and GND) plus third diode for auxiliary rail protection. Use Value: 10 pF capacitance prevents signal degradation at 480 Mbps; 30 V VR rating covers VBUS transients up to ±15 kV contact ESD. |
Use Scenario: Biasing and clamping analog outputs of MEMS accelerometers and environmental sensors operating at 1.8 V or 3.3 V. IC Role / Device Role / Timing Role: Three independent diodes used for rail-to-rail output clamping, reference voltage steering, and supply decoupling isolation. Use Value: 2 µA IR at 25 V ensures <1 nA leakage into high-impedance sensor nodes; 800 mV VF avoids shifting ADC reference thresholds. |
| Industrial CAN Bus Termination | Wearable Battery Polarity Guard |
|
Use Scenario: Providing low-capacitance termination and common-mode transient suppression on CAN_H/CAN_L lines in factory automation gateways. IC Role / Device Role / Timing Role: Dual-diode configuration (A1–K1 and A2–K2) for symmetric bus clamping; A3–K3 for VCC rail stabilization. Use Value: Independent cathodes prevent ground bounce coupling between CAN lines; 590 K/W Rth(j-a) sustains 200 mA peak currents during bus fault conditions. |
Use Scenario: Preventing damage from reversed battery insertion in compact medical patches and Bluetooth earbuds with coin-cell or LiPo inputs. IC Role / Device Role / Timing Role: Single-diode configured as reverse-polarity switch (A1–K1 in series with battery path); remaining diodes unused or repurposed for charge control. Use Value: 200 mA IF rating supports typical wearable peak loads (e.g., BLE radio burst); SOT666 footprint fits within 2.5 mm × 2.5 mm battery connector zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky triple diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single N-channel MOSFET (30 V, 3.5 A) in SOT23 - not functionally equivalent; lacks triple-diode topology and Schottky speed. | Designed for load switching, not signal clamping or polarity protection. | Not suitable as direct replacement; requires circuit redesign for active vs. passive protection. |
| BAT54C,115 | Triple Schottky in SOT23-6 (same electrical specs) but larger footprint (2.9 mm × 1.3 mm) and higher Rth(j-a) (~400 K/W). | Compatible functionally but occupies 2.3× more board area and has inferior thermal performance in sealed enclosures. | Select BAT54C only if SOT23-6 is already standardized in legacy designs; BAT54VV preferred for new miniaturized layouts. |
Compared with BAT54C,115, the BAT54VV delivers identical electrical performance in a 45% smaller footprint and 48% higher thermal resistance - making it optimal for next-gen wearables and modules where volume and thermal margin are tightly constrained, while DMN3026LSD-13 serves entirely different switching functions and cannot substitute.
Availability
BAT54VV is available at Aetrix Electronics and suitable for USB data line protection, IoT sensor bias clamping, and wearable battery polarity guard applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for BAT54VV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient components, with leadership in logic, discrete, and MOSFET technologies for automotive, industrial, and consumer markets.
The BAT54VV belongs to Nexperia's Schottky diode portfolio designed specifically for space-constrained, high-speed signal integrity applications - emphasizing ultra-low capacitance, precise forward voltage matching, and robust transient immunity in miniature packages.
FAQ
What is the maximum allowable junction temperature for BAT54VV?
The absolute maximum junction temperature (Tj) is 125 °C, as specified in the Limiting Values table. Operation above this temperature risks permanent parametric shift or failure. Derating is required above ambient temperatures of 25 °C, especially when dissipating >170 mW total power - consult Figure 1 in the datasheet for VF vs. IF curves at elevated temperatures.
Can BAT54VV be used in automotive applications?
No - the BAT54VV is explicitly marked as non-automotive qualified in the revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or qualification for automotive temperature ranges (−40 °C to +125 °C ambient), nor does it meet automotive reliability or failure rate requirements. Use only in commercial or industrial environments.
What is the recommended reflow profile for SOT666 mounting?
Nexperia specifies reflow soldering as the only recommended method. The SOT666 footprint in Figure 5 defines land patterns with 0.55 mm spacing between pads and 0.3 mm pad width. Peak temperature must not exceed 260 °C for ≤10 seconds, with ramp-up ≤3 °C/s and cooling rate ≥1 °C/s - per J-STD-020 moisture sensitivity level MSL3 handling guidelines.
How does the integrated guard ring improve reliability?
The integrated guard ring surrounds each Schottky junction to suppress edge leakage and prevent premature avalanche breakdown under high dv/dt or ESD stress. It enhances ruggedness against 8 kV HBM and 30 A TLP transients - confirmed by Nexperia's internal qualification tests - without increasing forward voltage or capacitance, preserving signal fidelity in high-speed interfaces.
BAT54VV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 2 µA @ 25 V
- Operating Temperature - Junction:
- -65°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BAT54VV,115 FAQ
1.How can I place an order for BAT54VV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT54VV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT54VV,115 reliable?
The price and inventory of BAT54VV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT54VV,115 is usually 5 days.
3.What payment methods are accepted for BAT54VV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT54VV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT54VV,115?
BAT54VV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT54VV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT54VV,115?
For technical support, including BAT54VV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT54VV,115 requirements.
6.How does Aetrix verify that BAT54VV,115 is sourced from the original manufacturer or authorized distributors?
All BAT54VV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT54VV,115 meets industry standards.
7.What is the process for return or replacement of BAT54VV,115?
All BAT54VV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAT54VV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT54VV,115 part is unused and in its original packaging.
Return procedure for BAT54VV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT54VV,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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